Room Temperature Epitaxy of Ni1−xMgxO on c Plane Sapphire by Plasma Assisted Pulsed Laser Deposition physica status solidi (b) 2026, 263 (7), e202500648. - July 5, 2026reprint

Electro-thermal breakdown in p-NiO/n-Ga2O3 heterojunction power diodes: evidence for the role of heat extraction via sapphire Proc. of SPIE Vol. PC13897, PC138970X · 2026 - May 7, 2026reprint

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1. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice Light: Science & Applications volume 10, Article number: 17 (2021) https://doi.org/10.1038/s41377-020-00453-x January 14, 2021reprint

2. nBn extended short-wavelength infrared focal plane array Optics Letters Vol. 43, Issue 3, pp. 591-594 February 1, 2018reprint

3. Electro-thermal breakdown in p-NiO/n-Ga2O3 heterojunction power diodes: evidence for the role of heat extraction via sapphire Proc. of SPIE Vol. PC13897, PC138970X · 2026 May 7, 2026reprint

4. Ga2O3/(Al)GaN Heterostructures for Next Generation Power Electronics physica status solidi (b), 2026; 263:e70213 April 24, 2026reprint

5. Background–limited long wavelength infrared InAs/InAsSb type-II superlattice-based photodetectors operating at 110 K APL Materials 5, 035502 February 13, 2017reprint