MIOMD-XI Speakers    
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101.  Prof. Gunther Springholz, Johannes Kepler University Linz, AUSTRIA
Late-Breaking Results: Quantum Dot Microcavity Lasers based on Epitaxial PbTe Dots Embedded in CdTe with 3.7 μm CW Mode Emission
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Gunther Springholz studied physics at the Technical University in Graz and the University of Linz in Austria, where he received his PhD in 1993. Since 1998, he is an associate professor at the Institute for Semiconductor Physics of the University of Linz, where he is leading a research group on IV-VI and SiGe semiconductors. He is author or co-author of more than 260 scientific papers, including several review articles and book chapters. His current research interests are semiconductor hetero- and nanostructures with a focus on narrow gap semiconductors, mid-infrared optoelectronic devices as well as magnetic semiconductors and topological insulators.

102.  Dr. Elizabeth Steenbergen, Air Force Research Labs, USA
Late-Breaking Results: InAs/InAs1-xSbx superlattices on GaSb substrates: a promising alternative type-II superlattice infrared material system
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Elizabeth Steenbergen is an engineer at the Air Force Research Lab. She received her MS and PhD in Electrical Engineering at Arizona State University in May 2009 and 2012, respectively. She accepted the Science Foundation Arizona fellowship and the DOD SMART scholarship during graduate school and was awarded the Palais Outstanding Doctoral Student award in Electrical Engineering at ASU.

103.  Prof. Adrienne Stiff-Roberts, Duke University, USA
Invited Talk: Hybrid nanocomposite infrared photodetectors
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Prof. Stiff-Roberts received both the B.S. degree in physics from Spelman College and the B.E.E. degree in electrical engineering from the Georgia Institute of Technology in 1999. She received an M.S.E. in electrical engineering and a Ph.D. in applied physics in 2001 and 2004, respectively, from the University of Michigan, Ann Arbor. As an Associate Professor of Electrical and Computer Engineering at Duke University, her current research interests include thin-film growth and characterization of polymer, nanoparticle, and hybrid nanocomposites; as well as the design, fabrication, and characterization of optoelectronic devices, especially multispectral photodetectors. Dr. Stiff-Roberts is a recipient of the NSF CAREER Award (2006), the ONR Young Investigator Award (2007), the IEEE Early Career Award in Nanotechnology of the Nanotechnology Council (2009), and the Presidential Early Career Award in Science and Engineering (2009).

104.  Dr. Mani Sundaram, QmagiQ, LLC, USA
Invited Talk: Performance of infrared focal plane arrays made from Type-I quantum wells and Type-II superlattices
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Dr. Sundaram is co-founder and CEO of QmagiQ, a company that develops, manufactures, and sells infrared focal plane arrays, sensor engines, and cameras based on Group III-V compound semiconductors. He received his B.Tech. from the Indian Institute of Technology Madras (India) and his MS and PhD from the University of California (Santa Barbara), all in Electrical & Computer Engg. He has worked at NASA-JPL, Lockheed-Martin, and TeraConnect. He was a Fellow of the Regents of the University of California (while a graduate student) and is a recipient of the NASA Award for Exceptional Technical Achievement. He has published extensively, holds several patents, and given some talks.

105.  Prof. Stephen Sweeney, Univ. of Surrey, UK
Invited Talk: Emerging materials for mid-infrared photonic devices
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Stephen John Sweeney is Professor of Physics, Head of Photonics and EPSRC Leadership Fellow at the University of Surrey. Stephen's research currently includes developing photonic materials and devices for applications including renewable energy, electronic-photonic integration, sensing and to develop high efficiency lasers over a wide wavelength range. One of his current major interests is in exploring the boundaries of III-V materials, for example Bismuth-containing alloys, to provide enhanced band-structures for optimized device properties and integration with standard substrates and processes.

106.  Mr. Rachid Taalat, Univ. Montpellier 2, FRANCE
Late-Breaking Results: The influence of the InAs/GaSb SL period on the performance of type- II SL MWIR photodiodes
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Rachid Taalat received his Master's degree in Physics and Engineering for microelectronics and nanotechnology materials from the University of Montpellier II, France, in 2010. he is currently pursuing the Ph.D. degree in Materials and Optronics systems at the Institut d'Electronique du Sud (IES) in Montpellier, France. My current research interests include device processing, optical and electrical characterizations of Type-II InAs/GaSb photodetectors.

107.  Dr. Thierry Taliercio, Université Montpellier 2, FRANCE
Late-Breaking Results: Surface and localized Plasmons Polaritons on arrays of doped and undoped semiconductors
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Thierry Taliercio: was born in Aix en Provence (France) in 1970. Married and three children. He received the HDR (Habiliation à Diriger les Recherches) diploma in solid state physics in 2003 from the University of Montpellier. He is an associate professor in the Institut d’Electronique du Sud since 2008 (NANOMIR group). From 1999 to 2007, he was associate professor in the Groupe d'Etude des Semiconducteurs (GES in Montpellier-France). He is a specialist of the optical properties of nitride semiconductors and particularly of semiconductor nano-structures: small (GaInNAs) and wide (InGaN, GaN, AlN) band gap nitride semiconductors. He developed several experimental techniques to measure carriers decay times in semiconductor nano-structures in the infra-red as well as in the UV range within the frame of the ACI project BAND (2003-2006). He developed a micro-photoluminescence experiment in the UV range to study the optical properties of a single GaN/AlN quantum dot, supported by the ACI project BUGATI (2003-2006) and the ANR ZOOM. He developed several simulation tools to model the optical properties of semiconductor based nanostructures. He is now working on photo-voltage spectroscopy to characterize the density of states of mid-infra-red laser and an angular resolved reflectance and transmittance experiment in the IR range (1-20 μm) to study IR photonic and plasmonic nanostructures. Doctor Thierry Taliercio is author/co-author of 76 publications in refereed journals including 42 communications in international conferences and two book chapters. Its articles are quoted 1136 times and its impact factor is of 19.

108.  Mr. Roberto Tanaka, Aeronautic Technical Institute (ITA), BRAZIL
Poster: Convergence studies in a coupled self-consistent Poisson-Schrodinger equation for complex quantum well nanostructures
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Roberto Yuji Tanaka holds a Master's degree in Applied Computing from the Brazil's National Institute for Space Research (2008). Nowadays, he is working in his doctoral thesis in the Space Science and Technology program of the Aeronautic Technical Institute (ITA). He works since 2002 at Brazilian Air Force's Department of Aerospace Science and Technology and has experience in computational science, with emphasis on numerical methods and optimization applied to nanostructured semiconductors such as quantum well and quantum dots.

109.  Dr. Ferechteh Hosseini Teherani, Nanovation, FRANCE
Late-Breaking Results: Catalyst-free PLD Growth of Self-forming Moth-eye ZnO Nanostructure Arrays for IR Anti-Reflection Applications
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Dr Ferechteh Hosseini Teherani: has been involved with the development of novel oxide materials and devices for over 25 years. After receiving her PhD from the University of Paris, Dr Teherani was a researcher at Thales (France), Nippon Telephone & Telegraph (Japan), Electrotechnical Laboratory (Japan) and Northwestern University (USA). In 2001, she went on to found a startup, Nanovation, of which she is currently CEO. Nanovation develops and commercialises ZnO thin films and nanostructures for optoelectronic applications. Dr. Teherani also has an MBA, has held an Eshbach Visiting Scholarship at Northwestern University and has been an expert for the European Commission since 2005. Dr. Teherani is author/co-author of over 115 papers and 8 patents.

110.  Prof. Roland Teissier, Université Montpellier 2, FRANCE
Invited Talk: Long wavelength InAs/AlSb quantum cascade lasers
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: We propose to explore the potential of InAs-based quantum cascade lasers to operate in the far infrared up to the THz spectral region. The fundamental advantage of this solution is the small electron effective mass in InAs, 0.023m0 compared with 0.067m0 in GaAs. This small effective mass should provide much higher optical gain and thus lower thresholds in long wavelength InAs-based QCLs, which should result in significant improvement of their performances. We will present here our preliminary work in this direction. We developed a process for the fabrication of double metal waveguide (DM), suitable for long wavelength and THz lasers. We designed and fabricated far infrared InAs/AlSb quantum cascade active regions using molecular beam epitaxy. A first important result is the demonstration of DM QCLs emitting up to λ=21 μm (υ=15 THz).

111.  Dr. Bill Tennant, Teledyne Scientific and Imaging, USA
Plenary Talk: MWIR Detectors-- A Comparison of SLS Photodiodes with HgCdTe.
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: William E. Tennant: Fellow of Teledyne Scientific and Imaging (TS&I) and Chief Technologist in Teledyne Imaging Sensors (TIS). Dr Tennant received his AB in physics (magna cum laude) from Harvard University in 1967, and his PhD in solid state physics from the University of California at Berkeley in 1974. Since he joined TS&I (formerly Rockwell Science Center) in 1973, Dr. Tennant has held several line management and technical leadership roles, including the invention, development, and/or application of many of the key IR technologies now in use at TIS. He developed several analytical techniques for II-VI, III-V, and IV-VI materials and devices. Dr. Tennant oversaw and personally contributed to development of: device quality HgCdTe/sapphire (PACE-I), HgCdTe/GaAs and HgCdTe/Si, large sized intrinsic MWIR Focal Plane Arrays, HgCdTe laser diodes, novel image processing devices, producible MBE (molecular beam epitaxy) growth of HgCdTe, MBE HgCdTe in-situ passivation, substrate-removed Vis-IR HgCdTe focal plane arrays (FPAs), two-color detector architectures, and high operating temperature HgCdTe FPAs. His rule of thumb (“Rule 07”) accurately describes HgCdTe diode performance over a wide range of temperature and wavelength covering >12 orders of magnitude in dark current—enabling system users to predict performance and benchmarking other insurgent technologies to HgCdTe and showed that HgCdTe performs up to fundamental natural limits. Most recently he has helped guide Teledyne’s development of IR focal plane arrays in Sb-based Type-II strained layer superlattices. He has co-authored over 100 papers and presentations, holds fourteen patents, received the 1993 IRIS (now MSS) Detector Specialty Group Levinstein Award for "Outstanding Technical Leadership in the Infrared Community," received the 2011 MSS Detectors best paper award for his presentation on the DARPA AWARE program, was a Rockwell Engineer of the Year for the year 1999, is a Fellow of the Military Sensing Symposia, a senior member of IEEE, a member of Sigma Xi, and a member of the American Physical Society.

112.  Dr. Meimei Tidrow, U.S. Army NVESD, USA
Late-Breaking Results: Overview of Strained Layer Superlattice Technology and Recent Progress in US
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Dr. Meimei Tidrow holds the highest technical rank ST (Senior Technical Professional) in US government at the Army Night Vision Lab. She is the Chief Scientist at NVESD for FPAs. Prior to joining NVESD, Dr. Tidrow was an ST at the Missile Defense Agency (MDA) serving as the Technical Advisor to the Director of the Advanced Technology and the Program Manager for the Passive EO/IR Program. Prior to MDA, Dr. Tidrow was a Research Physicist at the Army Research Lab. She has extensive experience in III-V infrared material and device research. She has published more than 100 journal and conference papers and has given more than 70 invited talks in the infrared technology area. She is a Military Sensing Symposia (MSS) Fellow and SPIE Fellow.

113.  Dr. David Ting, Jet Propulsion Lab, USA
Invited Talk: Mid- and Long-Wavelength Barrier Infrared Detectors
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: David Z. Ting received his B.S. degree with honors in physics from the California Institute of Technology, Pasadena, in 1980, and M.S. and Ph.D. degrees in physics from the University of Illinois at Urbana-Champaign in 1981 and 1986, respectively. He is currently the Deputy Director of the Center for Infrared Sensors and a Principal Member of Engineering Staff at the NASA Jet Propulsion Laboratory. His research interests include semiconductor physics and devices. Results of his work have been reported in over 180 research publications and in over 120 conference presentations and technical seminars. He holds 6 patents.

114.  Prof. Frank Tittel, Rice Univ., USA
Late-Breaking Results: Mid-Infrared semiconductor laser based trace gas sensor technologies: recent advances and applications
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Frank Tittel (BA, MA, Ph.D. in physics) graduated from Oxford University in 1959. From 1959 to 1967 he was a Research Physicist with General Electric Research and Development Center, Schenectady, New York. Since 1967 he has been on the faculty of the Department of Electrical and Computer Engineering at Rice University in Houston, Texas. Current research interests include quantum electronics, especially laser spectroscopy, and applications in medicine, environmental monitoring, industrial process control and national security. Dr. Tittel is a Fellow of the IEEE, the Optical Society of America and the American Physical Society. He received a Doctor of Science (HC) degree from JATE University, Szeged, Hungary, in 1993.

115.  Dr. Virginie Trinite, Alcatel-Thales III-V Lab, FRANCE
Late-Breaking Results: High Power Quantum Cascade Laser Arrays
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Trinite Virginie: is born in France in 1979. She graduated from the Ecole Centrale de Paris, Paris, France in 2003 and received her PhD. Degree in physics from the Ecole Doctorale of Ecole Polytechnique, Palaiseau, France in 2006. She now works as researcher at Thales Research & Technology, Palaiseau, France since 2007. Her PhD focuses on the theoretical modeling of titanium phases by ab initio calculations. Her current research focuses on theoretical modeling of semiconductor hetero-structures for QWIP and Quantum Cascade Laser devices, and more specifically on electronic transport properties.

116.  Dr. Mariano Troccoli, AdTech Optics, Inc., USA
Invited Talk: Quantum cascade laser development at AdTech: high power emission and power scaling for MWIR and LWIR applications
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Dr. Troccoli is Director of Product Development at AdTech, leading the effort on product design and innovation for QCLs since 2009. In 2006 he founded and was Director of Research of ArgosTech, an Agilent Technologies spin-off. Before then, he was at Harvard University and at Bell Labs. He co-authored more than 40 publications and filed more than 10 patents. His work has been widely recognized and he received several professional awards. He obtained his M.S. in Theoretical Physics magna-cum-laude and his Ph.D. in Quantum Electronics in 2001 from the Polytechnic of Bari, Italy. He is a senior member of IEEE and OSA.

117.  Mr. Stanley Tsao, Northwestern University, USA
Poster: Quantum dot - quantum well infrared photodetectors with high operating temperature and quantum efficiency
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Stanley Tsao received his B.S. degree in Electrical Engineering from Northwestern University and is currently a PhD candidate at the Center for Quantum Devices at Northwestern University. His research interests include growth, fabrication, and characterization of quantum well and quantum dot infrared photodetectors and growth of quantum cascade lasers.

118.  Prof. Raphael Tsu, University of North Carolina at Charlotte, USA
Plenary Talk: Resonant Tunneling from Inception to Applications
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Professor Raphael Tsu (with Tsu replaced by Zhu in pinyin) is a world leader in the areas of quantum properties of materials and device physics. An acknowledged authority in these subjects Professor Tsu has published nearly two hundred scholarly papers in scientific journals; an author of a monograph on quantum wells and superlattice materials and devices of which he is a co-inventor, holder of several patents for his discoveries and invention. The description of his research contributions while at the IBM, T.J. Watson Research Center in Yorktown Heights was presented to the White House by the US Army Research Office, The Superlattice Story, played an important role in the 90’s towards the US National Nanoscience Initiative (NNI).

119.  Prof. Zahra Vashaei , Northwestern University, USA
Poster: MOCVD grown III-nitride resonant tunneling devices
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Zahra Vashaei is currently working as a research assistant professor in Center for Quantum Devices(CQD) at Northwestern University, IL, USA. She received her Ph.D. degree in Applied Physics at Tohoku University, Sendai, Japan. Her research area is wide bandgap semiconductor devices including III-nitride materials (AlGaInN) and II-VI materials (MgZnO). Generally, her research interests include epitaxial growth of semiconductor material using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) and material characterization. Her area of expertise in CQD is the design, growth, and characterization/analysis of III-Nitride semiconductor materials and quantum structures for optoelectronic device applications, including development of resonant tunneling diodes(RTDs), photodetectors, light emitting diodes(LEDs), and laser diodes (LDs). She has (co-)authored more than 30 papers.

120.  Dr. Igor Vurgaftman, Naval Research Labs, USA
Invited Talk: Interband Cascade Lasers: Physical Principles and Operating Characteristics
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Igor Vurgaftman received the B. S. degree summa cum laude in Computer Engineering from Boston University in 1991, and the M. S. and Ph. D. degrees in Electrical Engineering from the University of Michigan in 1993 and 1995, respectively. Since 1995, Dr. Vurgaftman has been with the Optical Sciences Division of the Naval Research Laboratory, Washington, DC, where he has investigated mid-infrared lasers based on interband and intersubband transitions, methods of maintaining optical coherence in large-area semiconductor lasers, type-II superlattice photodetectors, coherent sources of surface plasmons, and spintronic optical and electronic devices, among other topics. He is the author of more than 220 refereed articles in technical journals, numerous contributed and invited talks at professional conferences, as well as 16 patents. Dr. Vurgaftman is a Fellow of the Optical Society of America and American Physical Society.

121.  Prof. Joachim Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), GERMANY
Late-Breaking Results: Recent advances in power scaling and narrow linewidth operation of 2 μm GaSb-based semiconductor disk lasers
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Joachim Wagner received the Ph.D. degree in physics from the University of Stuttgart, Stuttgart, Germany, in 1982. From 1982 to 1984 he worked at the “Max-Planck-Institut für Festkörperforschung”, Stuttgart, Germany, in the group of Prof. M. Cardona before joining the Fraunhofer-Institut for Applied Solid State Physics, Freiburg, Germany, in 1985. There he is currently deputy director and head of the Department of “Optoelectronic Modules”. He is also Professor at the Institute of Physics of the University of Freiburg and an associated member of the Materials Research Center Freiburg (FMF). His current research interests include III/Vsemiconductor heterostructures and their application in optoelectronic devices both for the infrared and the visible/uv spectral range. He is author or coauthor of more than 400 scientific publications including several review papers and book chapters.

122.  Dr. Zbig Wasilewski, National Research Council, CANADA
Invited Talk: MBE growth and optimization of THz quantum cascade lasers: towards high temperature operation
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Zbig Wasilewski received the Ph.D. degree from the Institute of Physics, Polish Academy of Sciences in 1986. His doctoral work focused on the influence of high hydrostatic pressure on the magnetooptical properties of shallow and deep donors in InSb. In 1988, after spending 14 months at Imperial College in London, where he expanded his work to other material systems and nanostructures, he joined the National Research Council of Canada where he worked until July 2012, focusing primarily on the molecular beam epitaxial growth and characterization of quantum structures and devices based on III–V semiconductor compounds. In July 2012 Dr. Wasilewski joined faculty of University of Waterloo where he holds a position of Waterloo Institute for Nanotechnology Endowed Chair and is a full professor at the Department of Electrical and Computer Engineering. He is a coauthor of over 400 refereed journal articles and conference proceedings papers.

123.  Dr. Eliezer Weiss, SCD Semiconductor Devices, ISRAEL
Late-Breaking Results: InAsSb-Based Bariodes Grown on GaAs Covering the Whole MWIR Atmospheric Window
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Eliezer (Eli) Weiss received his B.Sc. (1975) and D.Sc. (1984) in physical chemistry from the Technion, Israel Institute of Technology. From 1984 he is with SCD. In 1989 - 1990 Eli was a research-associate in Stanford University. From 1991 to 2001 he was the manager of SCD's Crystal Growth deportment, responsible for the development and production of HgCdTe crystal and epi-layers as well as the growth of III-V epi-wafers. Since 2001 he has been the Vice President for Technologies R&D in SCD. Eli has published 1 patent and more than 40 refereed and conference papers.

124.  Dr. Ulrike Willer, Clausthal University of Technology, GERMANY
Invited Talk: The use of quantum cascade lasers for the detection of hazardous materials
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Ulrike Willer received her diploma degree in physics from Christian-Albrechts University Kiel, Germany and her doctoral degree from Clausthal University of Technology, Germany. Since 2001 she is member of scientific staff at Clausthal University of Technology. She spent research stays at LBNL, Berkeley, CA and Rice University, Houston, TX. She has longstanding experience with mid-infrared spectroscopy starting from difference frequency generation with diode lasers up to the deployment of quantum cascade lasers. Her research interests include mid-infrared and photoacoustic spectroscopy, especially quartz enhanced photoacoustic spectroscopy, evanescent-field sensing and the development of sensor devices.

125.  Prof. Ben Williams, University of California Los Angeles, USA
Invited Talk: Terahertz quantum-cascade lasers based on transmission-line metamaterial waveguides
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Benjamin S. Williams: Prof. Williams received the Ph.D. degree from the Massachusetts Institute of Technology, Cambridge, Massachusetts in 2003 in Electrical Engineering and Computer Science. He was a Postdoctoral Associate at the Research Laboratory of Electronics at MIT from 2003-2006. In 2007, he joined Electrical Engineering Department at the University of California, Los Angeles, where he is currently an Assistant Professor, and is a Henry Samueli School of Engineering and Applied Sciences Fellow. His research interests include quantum cascade lasers, intersubband and intersublevel devices in semiconductor nanostructures, and terahertz metamaterials and sub-wavelength plasmonics. He is the recipient of the DARPA Young Faculty Award and the NSF CAREER award.

126.  Mr. Michael Witzan, Johannes Kepler University Linz, AUSTRIA
Late-Breaking Results: Comparison of MIR PbTe and PbSe quantum well microdisk lasers
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Michael Witzan started his study in technical physics at the Johannes Kepler University of Linz, Austria, in 2003. In 2010 he began to work on his master thesis in the IV-VI semiconductor research group of Prof. Gunther Springholz. Currently, he is finishing the master thesis and will start right afterwards with his Ph.D in the group of Prof. Springholz at JKU. His current research interests include the design, fabrication and characterization of IV-VI semiconductor structures and devices.

127.  Dr. Dwight Woolard, US Army Research Office, USA
Invited Talk: Physical Modeling of Interband Tunneling & Transitions in InAs/GaSb Broken-Gap Heterostructure Lasing Devices
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: U.S. Army Research Office Program Manager for Solid-State & High-Frequency Electronics directing research trusts in Nanometer-Scale & Molecular-Level Electronics and Terahertz-Frequency & Ultra-Fast Electronics. Dr. Woolard has been an active researcher in THz-Frequency Sensing Science and Electronic Technology since joining the ARL in 1993. Dr. Woolard is a graduate of North Carolina State University; was elected to IEEE Fellow in 2004 and was the receipient of the 2008 IEEE-USA Harry Diamond Award (both for contributions/leadership to science and technology at terahertz frequencies); and, was recognized for his Program Management by a 2011 U.S. Army SBIR Achievement Award.

128.  Mr. Michael Wootten, University of Iowa, USA
Poster: Evidence for superluminescent output in GaInAsSb/AlGaAsSb 2.4 μm in edge-light-emitting diodes with angled facets
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Ben Wootten: Graduated from St. Olaf College with a B.A. in Physics and Mathematics in 2011. He is now a graduate student at the University of Iowa researching edge emitting superluminescent diodes for optical chemical sensors.

129.  Dr. Gangyi Xu, Institut d'Électronique Fondamentale, FRANCE
Invited Talk: High power extraction in surface-emitting terahertz quantum cascade lasers using type-II photonic heterostructures
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Gangyi Xu was born in Zhejiang, China in 1974. He received the Ph.D. degree in Physics from the Lanzhou University, Lanzhou, China in 2000. He presently works at Institut d’Electronique Fondamentale in France. His research interests include mid- and far-infrared semiconductor lasers and photodetectors, photonic crystals, plasmonics, and metamaterials.

130.  Prof. Yury Yakovlev, Ioffe Physico-Technical Institute, RUSSIA
Late-Breaking Results: Highly tunable whispering gallery mode semiconductor lasers with controlled absorber
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Yury P.Yakovlev was born on October 17, 1939. He graduated with a M.Sc. degree from the Leningrad Electrical Engineering Institute in 1962 and jointed Ioffe Physico-Technical Institute in 1969. He received his Ph.D. degree in 1978 and the Doctor of Science degree in 1995 both in physics and mathematics from Ioffe Institute. His main research interests are technology and researches of narrow band gap III-V solid alloys heterostructures and optoelectronic devices (LED, Lasers and Photodiodes). In 1995, Yury Yakovlev organized and headed the Laboratory of Infrared Optoelectronics (LIRO) in Ioffe Institute. Prof. Yury P. Yakovlev has authored or co-authored 80 patents, over 200 papers, reviews and book chapters.

131.  Dr. QuanKui Yang, Fraunhofer-IAF, Optoelectronic Modules Dept , GERMANY
Invited Talk: Wall-plug efficiency of mid-infrared QC lasers: modeling, optimization, and experiments
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Quankui Yang received the B. Sc. degree in physics from Wuhan University, Wuhan, China in 1995, and the Ph. D. degree in solid-state electronics from the Chinese Academy of Sciences, Shanghai, China, in 2000. After that he joined the Fraunhofer Institute for Applied Solid-State Physics (IAF), Freiburg, Germany, as a research scientist. His work mainly focuses on the development and application of infrared semiconductor lasers in particular quantum cascade lasers. His interests also include other semiconductor devices like infrared detectors, heterojunction bipolar transistors, and backward diodes. Dr. Yang is a co-inventor of 3 patents, has co-authored more than 70 peer-reviewed journal papers, and contributed to an edition of Landoldt-Bornstein dedicated to quantum cascade lasers.

132.  Dr. Rui Yang, Univ of Oklahoma, USA
Late-Breaking Results: Recent Progress in InAs-based Interband Cascade Lasers
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Dr. Yang received his Ph.D in physics in 1987. He is a professor at the University of Oklahoma (OU) with research activities in semiconductor quantum devices such as mid-infrared lasers and detectors, and photovoltaic devices. Prior to joining OU 2007, he was a Principal Member of Engineering Staff and a Task Manager at the Jet Propulsion Laboratory (JPL), where he led the development of interband cascade lasers for applications in Earth sciences and planetary explorations. He received the Edward Stone Award in 2007 from JPL for outstanding research publication and the successful accelerated infusion of cutting-edge interband cascade semiconductor laser technology into flight mission readiness.

133.  Mr. Mohammad Yaseen, Academia Sinica, TAIWAN
Poster: Photonic Crystal Nanobeam Laser
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Mohammad Yaseen: received the BSc degree and the MSc degree in electrical and electronic engineering from University of Mosul, Iraq, in 2003, and 2006 respectively. He is currently pursuing the Ph.D. degree in the engineering system and science department, National Tsing Hua University, Taiwan. His current research interests include semiconductor physics, mainly in optical devices, including photonic devices, plasmonic devices, nanolasers, and the growth and optical properties of nano-structured materials.

134.  Mrs. Asli Yildirim, University of Iowa, USA
Poster: Suppression of phase separation in thick layers of mid-infrared GaInAsSb alloys grown by molecular beam epitaxy: the effect of growth temperature
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Asli Yildirim received her B.S. degree in engineering physics from Hacettepe University, Turkey in 2006. Shortly after graduation, she joined the Demir Group at Bilkent University as a research engineer, where she focused on fabrication and characterization of light emitting diodes, and also contributed patent applications. In the spring semester of 2008, she joined the Prineas Group as a graduate student, and her research has focused on growth and characterization of GaInAsSb alloys across the immiscibility region for potential mid-infrared applications

135.  Dr. Yong-gang Zhang, Shanghai Institute of Microsystem and Information Technology, CHINA
Late-Breaking Results: Emission spectroscopy in MIR using FTIR: an overview
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Zhang Yong-gang: received B.S degree in semiconductor device from Nanjing Institute of Posts and Telecommunications, China in 1982, M.S and Ph.D. degrees in semiconductor physics from Shanghai Institute of Metallurgy, Chinese Academy of Sciences in 1987 and 1996 respectively. He had been a worker during 1975-1978, and a teacher during 1982-1984. He joined Shanghai Institute of Metallurgy (now named Shanghai Institute of Microsystem and Information Technology), Chinese Academy of Sciences since 1987, his research interests include III-V semiconductor optoelectronic materials, devices and applications. He had been a research professor at the State Key Laboratory of Functional Materials for Informatics since 1996, and supervised more than 20 Ph.D. and M. S. students there. He was a senior member of IEEE.

136.  Prof. Hans Zogg, ETH, Zürich, SWITZERLAND
Invited Talk: Lead chalcogenide widely tunable monomode vertical external cavity surface emitting lasers (VECSEL) near room temperature
     Summary [+]   |   Biography [+]   |   Abstract [PDF]
Speaker Biography: Hans Zogg received his diploma and PhD both from ETH Zurich. After some industrial research positions, he again joined ETH. He got his habilitation in 1988 as a private lecturer at ETH and founded a group with main activities in infrared materials and devices as well as thin film photovoltaics. His main interests are the physics and technology of lead-chalcogenide (IV-VI) narrow gap semiconductors. He was the first to epitaxially grow device quality narrow gap semiconductors on Si-substrates and demonstrated mid-infrared photovoltaic detectors and detector arrays in these layers already in 1984. He devoted quite some work to understand the mechanical strain relaxation mechanism and the reduction of dislocation densities due to the huge lattice- and thermal expansion mismatch between the layers and the Si-substrate, and the influence of defects on the electronic properties of the heteroepitaxial IV-VI mid-IR devices.

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