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1. | Dr. Masayuki Abe, 3D-bio Co., JAPAN Invited Talk: Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT-MEMS Technology Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Masayuki Abe received the B.E., M.E., and Ph.D. degrees in Electrical Engineering from
Osaka University, Osaka, Japan, in 1967, 1969, and 1973, respectively. In 1973, he joined
Fujitsu Laboratories, Ltd., Japan, where he was engaged in developing AlGaAs and InGaAsP
LEDs for fiber communications, microwave HEMTs for DBS receivers, high-speed HEMT
LSIs for supercomputers. Since 1998, he has been engaged in developing ten kilowatt class
high power h-GaN HEMTs for solar-cell & fuel-cell inverters of co-generation systems, high
power 3C-SiC vertical DMOSFETs and c-GaN HEMTs for EV/HEV inverters, modulation
doped heterostructure thermopiles (H-PILE) for uncooled infrared image-sensor at KRI Inc.
and 3D-bio Co., Ltd. He has authored more than 200 scientific publications and 11books.
He is a Life Fellow of IEEE. He is currently President at HEMTCORE and 3D-bio Co., Ltd.
He received the Distinguished Contributed Paper Award of the Laser Society of Japan in 1980, the International Prize
of SIOA in Italy in 1987, and the Best Poster Award of ICMAT, MRS in 2005. He served as Overseas Advisor for the
IEEE GaAs IC Symposium (1983-1985), a Guest Editor of the IEEE Transactions on Electron Devices for the May 1986 Special Issue on Heterojunction Field-Effect Transistors (HFET), and a Lecturer for a short course at the 1990 IEEE GaAs IC Symposium. He served as Technical Committee Member of MITI(METI) of Japan for many National R&D Projects on GaAs and HEMT related technology (1981-1996).
Summary: Novel thermopiles based on modulation doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity R with the high speed response time τ are designed to be 4,900 V/W with 110 µs. Based on integrated HEMT-MEMS technology, the 32x32 matrix FPAs are fabricated to demonstrate its enhanced performance by black body measurement. The technology presented here demonstrates the low cost potentiality for uncooled infrared FPA application. ... Read Full Abstract [PDF] |
2. | Mr. Abdullah Aldukahyel, University of Surrey, UK Poster: The influence of inter-valley scattering on λ∼3.7 μm InGaAs/AlAs(Sb) quantum cascade lasers. Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Abdullah Aldukhayel is a PhD research student working in the Advanced Technology Institute at the University of Surrey. Current interests include the development of semiconductor lasers for sensing and free-space communications. His undergraduate and master degrees were obtained from the King Saud University in Saudi Arabia who are currently sponsoring his PhD project. Summary: Semiconductor lasers emitting in mid infra-red region are of increasing interest owing to their use in wide range of applications. One of the important applications is a sensor for monitoring gases such as CO 2, SO 2 and CH 4. This requires inexpensive, room temperature and reliable mid-infrared light emitting devices. Despite significant advances in conventional long wavelength inter-band lasers, their performance remains limited by large losses due to non-radiative Auger recombination and inter-valence band absorption which are fundamental processes in narrow band gap III-V material systems. In the 3-4µm region, quantum cascade lasers (QCLs) can potentially be used as a solution to overcome Auger recombination which limits the performance of standard inter-band lasers. They can also be grown on more readily available substrates, such as InP which reduces their cost and eases manufacture. Since the transition occurs between two confined electron levels in the conduction band, a large conduction band offset is required to provide a short emission wavelength. Large separations between the Γ and indirect L- and X- valleys are also needed to avoid inter-valley scattering processes which may deteriorate the performance of QCLs. ... Read Full Abstract [PDF] |
3. | Dr. Igor Andreev, Ioffe Physical-Technical Institute RAS, RUSSIA Poster: Ultrafast (bandwidth 2-10 GHz) photodiodes for the 1.3-2.4 ?m spectral range Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Igor A. Andreev graduated with a M.Sc. from the Leningrad Electrical Engineering Institute in 1983 and jointed Ioffe Institute, where he received his Ph.D. degree in 1994. Now he is a senior researcher and Head of Photodiode R&D group. His main scientific interests are impact ionization and photocurrent multiplication processes in narrow-gap III-V compounds, high-efficiency photodiodes based on GaSb, InAs and its multicomponent solid solutions, photoelectric processes in narrow band-gap semiconductor materials. He has been the recipient of a number of research grants from national and international granting bodies including RFBR, American Physical Society, ISF. Number of publications and inventions is about 95. Summary: High-efficiency, broad bandwidth (2-10 GHz) GaInAsSb/GaAlAsSb p-i-n photodiodes with air-brigde frontal contact operating in the 1.2-2.4 ?m spectral range at room temperature have been developed for the first time. The broad bandwidth photodiodes make it possible to study fast processes in laser physics, nuclear physics, and physics of cosmic rays. These devices are also of great interest for long distan?e ranging, high-frequency optical fiber communications, the free-space optical link, medicine, and so on. ... Read Full Abstract [PDF] |
4. | Dr. Aaron Andrews, Vienna University of Technology, AUSTRIA Invited Talk: InGaAs/GaAsSb Material System for Quantum Cascade Lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Aaron Maxwell Andrews is a University Assistant at the Vienna University of Technology, Austria. He received his B.S. degree from the University of California, Los Angeles, and his Ph.D. from the University of California Santa Barbara. He was a post-doctoral researcher and a Marie-Curie researcher at the Vienna University of Technology. Dr. Andrews' research interests include the growth by molecular beam epitaxy, characterization, and fabrication of optoelectronic nanostructures and devices. He has been active in the development of intersubband devices in the mid-infrared and terahertz spectral regions. Summary: Quantum cascade lasers (QCLs) utilize intersubband (ISB) transitions to produce coherent light in the mid-infrared (MIR) and terahertz (THz) spectral regions, 3-300 µm. Each cascade cell is a sequence of quantum wells and barriers, engineering an upper and lower laser level, where electrons can relax in a radiative transition. The unipolar nature of the QCL allows great creativity and flexibility in the active region and waveguide design. The material system is a key component when fabricating ISB devices. InGaAs/InAlAs lattice-matched to InP and strain-compensated has achieved room-temperature, continuous-wave, watt-level power, and broad gain in the MIR. The AlGaAs/GaAs material system has an adjustable conduction band offset from 0–450 meV, making it suitable for quantum well infrared photodetectors (QWIPs) and THz QCLs. The InGaAs/GaAsSb material system, lattice-matched to InP, is an excellent candidate to replace the commonly used GaAs/AlGaAs material system for both MIR and THz lasers and detectors. This material system has the potential to improve ISB devices by reducing the electron effective mass in the wells and through the elimination of aluminum from the barriers, reducing the electron effective mass in the barriers as well, and the elimination of Al-oxide from the exposed surfaces, therefore simplifying subsequent post processing and/or regrowth. The low effective mass for electrons leads to a spreading of the electron wave function, allowing for a thicker barrier, and a higher optical matrix element and thus improved laser gain. The InP substrate is ideal for dielectric waveguiding in the MIR and for substrate lift off in THz double-metal waveguides. A MIR QWIP and QCLs have been realized in the InGaAs/GaAsSb material system. THz QCLs based on LO-phonon depletion have been produced and characterized. We present recent progress in the design, growth, and fabrication of MIR and THz QCLs from the InGaAs/GaAsSb material system, including some features of these intersubband devices. ... Read Full Abstract [PDF] |
5. | Prof. Mehdi Anwar, Univ. of Connecticut, USA Invited Talk: ZnO-Based Oxide Semiconductors: A Material Platform for High Power Room Temperature THz QCLs Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Mehdi Anwar currently serves as a Full Professor in the Electrical and Computer Engineering department. He is the Director of the NSF funded Industry University Cooperative Research Center. He has also served as the Associate Dean for Research & Graduate Education of the School of Engineering, University of Connecticut from June 2006 till May 2009. He served as the founding Director of the Department of Homeland Security Center of Excellence from June 2007 till May 2009. Moreover, he was the interim Director of the Connecticut Global Fuel Cell Center serving from June 2007 till January 2009. He served as the interim Department Head of ECE from June 1999 - August 2001. Summary: The non-evasive and contactless THz imaging of obscure or hidden objects has found wide application in the security community along with the standard applications ranging from astrophysics to the inspection of integrated circuits. Most of the applications prefer high power THz sources operating at room temperature, however, the availability of such high power THz sources still remains a challenge. Using III-V material, distributed feedback Quantum Cascade Lasers (QCL) an output power of 2.4 watts have been reported. It is anticipated that the group III-nitrides may allow even higher output power at room temperature due to the rather large polar optical phonon energy, however, such experimental results are yet to be reported. ZnO/Zn 1-xMg xO provides an alternative material system that may also allow high power room temperature generation of THz radiation. ... Read Full Abstract [PDF] |
6. | Prof. Asghar Asgari, Univ of Tabriz, IRAN Poster: The line-edge roughness scattering in a Graphene Nanoribbons based Infrared Photodetector Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Asghar Asgari is borne in Iran 1973. He got his BSc and MSc in solid state physics and electronics from university of Tabriz, Iran. He got his PhD under Prof. Kalafi from University of Tabriz and Prof. L. Faraone from University of Western Australia, supervisions. In 2002 he joined microelectronics research group in the University of Western Australia as research associate. In 2004, he started his work in Photonics group at the University of Tabriz in Iran. Currently he is Professor in photonics group and also Adjunct Senior research fellow in Microelectronics Research group at the University of Western Australia. Summary: Graphene nanoribbons (GNRs) have attracted much attention because of their properties and their potential in designing high performance devices. At low field regime, the carrier transport in GNR is affected by various scattering mechanisms. If we consider a GNR without any chemical doping, the line edge roughness scattering (LER) is expected to play an important role in scattering rate of GNRs. In this paper we have calculated the generation and recombination rate of pure A-GNR due to the LER scattering mechanisms, for a GNR based IR-detectors at different carrier concentration, temperature and different nanoribbon widths. ... Read Full Abstract [PDF] |
7. | Prof. Koray Aydin, Northwestern University, USA Poster: Reconfigurable Infrared Metamaterials Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Koray Aydin is an Assistant Professor in the Electrical Engineering and Computer Science Department at Northwestern University and leading the Metamaterials and Nanophotonic Devices Laboratory. He has received his B.S. and Ph.D. degrees in Physics from the Bilkent University in 2002 and 2008, respectively. He has worked as a postdoctoral researcher between 2008-2010 and a research scientist between 2010-2011 at the California Institute of Technology under the supervision of Prof. Harry Atwater. Dr. Aydin's postdoctoral research has focused on the experimental and theoretical investigation of active optical metamaterials and functional plasmonic nano structures. His research interests are in the general area of nanophotonics, with a specific focus towards the realization of nanophotonic devices for use in energy conversion, defense and health applications. Dr. Aydin is the recipient of the SPIE Educational Scholarship in 2007. Summary: Nanophotonics, the emerging field of photon-material interactions at the nanoscale, poses many challenges and opportunities for researchers engineering devices with subwavelength features. Plasmonic nanostructures and metamaterials exhibit optical properties not seen in conventional photonic materials and enable focusing, guiding, bending, and absorbing photons at the nanoscale. They are poised to revolutionize a broad range of applications including energy and sensing. In this talk, I will describe the design, nanofabrication and optical characterization of engineered nanophotonic materials that enable controlled and enhanced photonic functionalities. ... Read Full Abstract [PDF] |
8. | Prof. Yanbo Bai, Northwestern University, USA Poster: High power quantum cascade ring lasers and possible applications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Yanbo Bai received his M.S. degree in Physics and Ph.D. degree in Electrical Engineering from Northwestern University in 2005 and 2011. He is currently a research assistant professor at Northwestern. Since 2005, he has been with the Center for Quantum Devices. His research holds the current performance records of mid-IR quantum cascade lasers (QCLs) in terms of the output power and wall plug efficiency. He has also been investigating photonic crystals, broad area devices, optical coatings, ring lasers, and terahertz QCLs. He is the recipient of SPIE best student paper award (2008), SPIE optical science and engineering scholarship (2010), IEEE photonics society graduate student fellowship (2010), and Northwestern EECS outstanding Ph.D. thesis award (2011). He is the author of 18 peer reviewed journal publications and 11 conference papers. Summary: Quantum cascade laser (QCL) technology has undergone tremendous development in the last decade. The current state-of-the-art QCL gain medium gives a wall plug efficiency (WPE) of 21% in room temperature continuous wave (cw) operation. This was achieved in conventional edge-emitting devices without intentional spectral and spatial beam quality control. Add-on features, such as one dimensional distributed feedback (1D-DFB), photonic crystal distributed feedback (PCDFB), or ring cavity surface emitting (RCSE) QCLs, allow for spectral and/or spatial beam shaping to some extent. However, except for the conventional edge emitting 1D-DFB, which has been demonstrated with watt-level cw operation at room temperature, the rest are limited to pulsed mode operation. ... Read Full Abstract [PDF] |
9. | Mr. Neelanjan Bandyopadhyay, Northwestern University, USA Poster: High power, continuous wave, room temperature operation of λ ~ 3.39 μm and λ ~3.56 μm AlInAs/GaInAs/InP-based quantum cascade lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Neelanjan Bandyopadhyay is currently a PhD student in the Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, USA. He is working on the development of high power mid-infrared AlInAs/GaInAs/InP based quantum cascade lasers (QCLs) operating at continuous wave (CW) at room temperature (RT). In particular, he has designed, grown and demonstrated short wavelength QCLs operating between 3 and 4 μm. Summary: High power, continuous wave (CW), room temperature (RT) operation of quantum cascade lasers(QCLs) in the lower part (3-4μm) of the mid-infrared atmospheric window (3-5μm) is needed for environmental monitoring, trace gas detection, exhaust control and countermeasures. Though more than 5W CW RT operation is demonstrated at a longer wavelength of 4.9 μm, high power CW RT QCLs around and below 3.5μm operation remain a difficult goal. ... Read Full Abstract [PDF] |
10. | Dr. Can Bayram, IBM Watson Labs, USA Late-Breaking Results: AlGaN-based engineered intersubband devices Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Can Bayram is working as a Research Scientist at IBM T. J. Watson Research Center, Yorktown Heights, USA. He received the Ph.D. degree in Solid State and Photonics from Northwestern University, USA. His current research interests are the development of high efficiency III-V solar cells, III-N light emitting diodes, and novel growth and fabrication technologies.He is the recipient of Boeing Engineer of the Year and Dow Sustainability Innovator Awards, IBM and Link Foundation Energy Fellowships, and top awards form IEEE, SPIE, and ICDD. He has (co-)authored 27 high-impact journal papers with 56 scientific contributions, and an active reviewer for journals&agencies. Summary: III-Nitrides (Al XGa YIn (1-X-Y)N) are a unique group of semiconductors offering a direct bandgap over its entire composition range. The nitride based optoelectronic devices promise high reliability and efficiency as well as clean, robust, and a compact alternative to existing technologies such as those in use in our daily-life (lighting), military defense, or even space exploration. Historically, two key spectral regimes, ultraviolet and visible, have drawn most of the attention for a wide range of commercial applications in sanitation and solid state lighting. Recently, a better control over deposition, e.g., by metal-organic chemical vapor deposition (MOCVD) coupled with better understanding of the material system have enabled the engineering of III-nitride superlattices for applications in infrared to terahertz intersubband devices. MOCVD has been the backbone of the III-nitrides growth and an industry standard for epitaxial growth of compound semiconductors on a crystalline substrate. There has been a sustained improvement in wafer throughput by MOCVD making it cost-effective in mass-production. In this talk, design, growth, and measurement of MOCVD-grown Al XGa YIn (1-X-Y)N intersubband devices will be discussed. ... Read Full Abstract [PDF] |
11. | Prof. Gregory Belenky, Stony Brook Univ., USA Invited Talk: Metamorphic antimonides for infrared photonics Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Gregory Belenky IEEE Fellow received the D.Sc. degree in physics and mathematics from the Institute of Physics, Baku. In 1990-1994 he was at AT&T Bell Labs, Murray Hill, NJ. He is currently Distinguished Professor and Head of the Optoelectronic Group at SUNY in Stony Brook. Summary: The III-V based interband type devices for infrared photonics operating within the spectral region of λ > 2 μm can be grown today only on commercially available InAs, GaSb and InSb substrates. Due to a large difference between lattice parameters of InAs GaSb and InSb, the requirement of pseudomorphic growth limits the device design capabilities. In this work we will show that using linearly compositionally graded buffer layers on GaSb allows the growth of unstrained and unrelaxed thick (up to 5 μm) layers with lattice parameters larger (0.9%, 1.4% and 2.1%) than that of the substrate. ... Read Full Abstract [PDF] |
12. | Prof. Dan Botez, Univ. of Wisconsin-Madison, USA Invited Talk: Two-Dimensional Conduction-Band Engineering: Achieving Ultimate Wallplug Efficiency and Reliability for Quantum Cascade Lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dan Botez has received his B.S., M.S. and Ph.D. degrees in Electrical Engineering from University of California, Berkeley. He has carried out research at RCA Labs, TRW Inc., and is currently the Philip Dunham Reed Professor of Engineering at University of Wisconsin-Madison. He has published over 370 papers and holds 48 patents. Summary: Tapered-Active (TA) quantum-cascade lasers (QCLs) are devices for which the barrier heights in their active regions increase in energy from the injection to the exit barriers. The TA design leads to carrier-leakage suppression because the energy difference between the upper lasing level and the next higher energy level, E(54) significantly increases. The mechanisms behind the E(54) increase are elucidated. An optimized 4.7 μm-emitting TA-QCL provides an E(54) value as high as 99 meV. Then the relative carrier leakage is ≤ 1% and, at 300 K, front-facet, CW wallplug-efficiency values of 27 % become possible. ... Read Full Abstract [PDF] |
13. | Dr. Ryan Briggs, Jet Propulsion Laboratory, USA Late-Breaking Results: Carbon monoxide monitoring for low-power spacecraft fire detection systems using quantum cascade laser sources at 4.6 µm Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Ryan M. Briggs received his PhD in Materials Science at the California Institute of Technology, working in the area of silicon photonics and hybrid integration with plasmonic structures and phase-change materials. He received his BS in Engineering Physics at Colorado School of Mines, where he also completed an MS thesis on genetic algorithms for determining the atomic structure of semiconductor surface reconstructions. Presently, he works at JPL, focusing on the design and fabrication of space-qualified infrared semiconductor laser sources for atmospheric gas detection, including distributed-feedback diode lasers operating in the 2 to 3 µm wavelength range and mid-infrared quantum cascade lasers. Summary: Fire detection instruments are an essential component of spacecraft safety systems that must be accurate and reliable, but with minimal weight and power requirements. NASA has committed to deploying compact, low-power fire detection platforms for the International Space Station and future missions by developing instruments to directly monitor concentrations of particulates, acid gases, and carbon monoxide (CO). Absorption spectrometers[1] operating at wavelengths near 4.6 µm can be used to detect small amounts of CO without interference from carbon dioxide, water vapor, or other gases that are normally present in habitable environments. We report on the development of an infrared source for a portable, battery-driven CO monitoring instrument using an aspirated analysis cell and a single-frequency quantum cascade (QC) laser. The system design improves upon state-of-the-art CO detection instruments in terms of power consumption and optical-interaction path length, allowing for an overall reduction in size. ... Read Full Abstract [PDF] |
14. | Dr. Gail Brown, Air Force Research Lab. USA Late-Breaking Results: Electrical and Optical Studies on InAs/InGaSb VLWIR Superlattices Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Gail J. Brown is a Principal Physicist with the Electronics and Optical Materials Branch of the Materials and Manufacturing Directorate of the Air Force Research Laboratory. She has worked on developing semiconductor materials for infrared detector applications since 1980. Dr. Brown is the program manager for very long wavelength infrared detector materials and for quantum semiconductor materials. In addition she leads a research team studying the epitaxial growth, theoretical modeling and property characterization of InAs/Ga(In)Sb superlattices for infrared detection. Dr. Brown has co-authored over 200 papers and is a AFRL Fellow as well as a SPIE and APS Fellows. Summary: InAs/InGaSb superlattice (SL) materials are an excellent candidate for infrared photodiodes with cut-off wavelengths beyond 15 µm, i.e. in the very long infrared wavelength (VLWIR) range. There are relatively few options for high performance infrared detectors to cover wavelengths longer than 15 µm, especially for operating temperatures above 15K. There are a variety of possible superlattice designs that will cover the VLWIR wavelength range, including designs with and without indium alloying of the GaSb layers. Transport modeling has shown that alloy scattering should not be a dominant factor in these superlattices so our focus is on designs with 25% indium in the gallium antimonide to achieve energy band gaps less than 50 meV with a superlattice period on the order of 68 Å. Similar to the work reported on InAs/GaSb LWIR and VLWIR superlattices, our designs employ InGaSb layers less than 7 monolayers in width. While the superlattice designs are strain balanced to the GaSb substrate, care was also taken to minimize strain spikes in the interfacial regions. High resolution transmission electron microscope images were analyzed to create strain mapping profiles of the SL layers and interfaces. By focusing on a narrow set of VLWIR SL designs, the deposition parameters for the molecular beam epitaxial SL growth could be carefully optimized. ... Read Full Abstract [PDF] |
15. | Mr. Yuan-yin Cao, Shanghai Institute of Microsystem and Information Technology, CHINA Late-Breaking Results: InP-based InAs/InGaAs quantum well lasers at 2 μm Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Cao Yuan-ying: was born in Jiangxi province, China, in 1986. He received the B.S. degree in physics from Shaanxi Normal University, Xian, China in 2009. He is currently working towards his Ph.D. degree in Micro-electronic & Solid Electronics at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS). His research interests are on the optoelectronic devices. Summary: Mid-infrared lasers with emission wavelength around 2 µm are very useful for molecular spectroscopy and trace-gas sensing. Traditionally such semiconductor lasers are developed in InGaAsSb/AlGaAsSb material system on GaSb substrate. On the other side, In xGa 1-xAs/In 0.53Ga 0.47As (x>0.53) quantum well (QW) structure on InP substrate is an alternative approach to demonstrate lasers in this spectral range. It is promising to achieve superior performances owing to the superior quality of InP substrate as well as the more mature growth and processing technology. In this work, we report the demonstration of InP based InAs/InGaAs quantum well lasers emitting at 2 µm, where a double QW structure composed of compressive InAs /In 0.53Ga 0.47As DA triangular well and tensile In 0.43Ga 0. 57As barrier is used as the active region. The spectral and optoelectronic features of the laser are characterized in detail. ... Read Full Abstract [PDF] |
16. | Prof. Federico Capasso, Harvard University, USA Plenary Talk: High performance Master Oscillator Power Amplifier and Plasmonic Collimated Quantum Cascade Lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Federico Capasso is the Robert Wallace Professor of Applied Physics at Harvard University, which he joined in 2003 after a 27 years career at Bell Labs. His research has spanned a broad range of topics from applications to basic science in the areas of electronics, photonics, nanoscale science and technology including plasmonics, metamaterials and the Casimir effect. Summary: In the talk I will review recent research of my group on novel approaches to high power single longitudinal, single transverse mode QCLs and on applications of plasmonics to achieving high beam quality (low divergence, multibeam operation etc.). To reach high output powers, which is important for example for stand-off detection large area devices can be fabricated which are pumped with high currents. The drawbacks of this approach are a decreased beam quality arising from high order transversal electromagnetic modes and decreased wall plug efficiencies. Two section devices, where one section acts as the pumping section (referred to as master oscillator (MO) section) and the other section serves as a power amplifier (PA) section were fabricated.. The MO section features a DFB grating to ensure single-mode emission. We report single longitudinal-mode λ = 7.26 µm MOPAs at 300 K reaching output power of several Watts. The devices display single-transverse-mode emission at TM00. ... Read Full Abstract [PDF] |
17. | Dr. Mathieu Carras, Alcatel-Thales III-V Lab, FRANCE Invited Talk: Quantum Cascade Detectors Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Mathieu Carras is born in 1979. He graduated from Ecole Centrale Paris in 2003. From 2003 to 2005 he worked on quantum well photodetectors (QWIPs) and InAsSb detector to obtain his PhD of University Denis Diderot. From 2006 he was Hired in the Quantum Cascade Lasers (QCL) Team and continued to work in collaboration with University Denis Diderot on Quantum Cascade Detectors (QCD) Since 2011 He his head of the QCL team. His research activities are mainly focusing high power QCLs and DFB/ External cavity QCLs for spectroscopy. He also works on the integration of QCL on silicon. He continues to have activities on thermal imaging using quantum wells. Summary: Photodetectors based on semiconductor quantum wells have been developed over the last decades, mostly for thermal imaging applications in the long wave infrared range (LWIR) (8-12 μm). Thanks to the tunability of the quantum well structures, these devices reach nowadays other wavelength ranges: the very long wave infrared range (VLWIR) (12-20 μm) for applications such as space detection and the mid wave infrared range (MWIR) (3-5 μm) for imaging. Quantum cascade detectors have been proposed in 2001 as photovoltaic detectors and studied since 2003 in a collaborative team between III-V Lab and University Denis Diderot in Paris. During those years, QCDs have been designed and fabricated at different wavelength from MIR to THz. ... Read Full Abstract [PDF] |
18. | Prof. Robert P.H. Chang, Northwestern University, USA Poster: Conducting Oxide Nanorod Arrays and Their Extraordinary Optical Properties for Sensing Applications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: R.P.H. (Bob) Chang is a recognized innovator in materials research, interdisciplinary science education, and international networking. Chang earned his B.S. in Physics and a Ph.D. in Astrophysics at MIT and Princeton respectively. He spent 15 years performing basic research at Bell Labs (Murray Hill) and helped in the development of low temperature plasma processing for the microelectronics industry. During his tenure at Northwestern University, he headed the NSF-funded Materials Research Center for fourteen years during which time he provided a new vision for the center and launched new interdisciplinary research initiatives. His current research interests include nanostructured materials, nanophotonics, and advanced solar cell development. An example is the next generation of all solid state flexible solar cell with high efficiency and low production cost. Chang is a Fellow of the American Vacuum Society and the Materials Research Society Summary: Transparent conducting oxides (TCOs), in general, are degenerated semiconductors with wide electronic band-gap. The combination of these two features makes them transparent at visible spectrum while still conductive as metals. Thus, they are found in the applications like optoelectronics, photonics, and photovoltaics. However, applying them to infrared sensors is a sparsely exploited research area. With the breakthrough of nanofabrications, nanostructures of TCOs are synthesized. It is then possible for people to create high crystal quality TCO nano-size building blocks and assemble them to designed infrastructures to control light at subwavelength regime and focus it to desired positions. ... Read Full Abstract [PDF] |
19. | Dr. Jianxin Chen, Shanghai Institute of Technical Physics, CHINA Late-Breaking Results: MWIR and LWIR InAs/GaSb Superlattice Infrared Photodetectors Grown by Molecular Beam Epitaxy Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Jianxin Chen was graduated from Shanghai Institute of Metallurgy, Chinese Academy of Sciences. He has been working III-V compounds for about 20 years. He was with EPFL, Bell Labs, Lucent Technologies and Princeton University from 2000 to 2009. He is now with Shanghai Institute of Technical Physics, CAS. Summary: High quality InAs/GaSb superlattice materials with sharp X-ray diffraction peaks were obtained. The 0 th order satellite peak position has an angle distance of 16" to that of the substrate peak, corresponding to a lattice-mismatch of 1.5×10 -4. The full width at half maximum (FWHM) of the 0th order satellite peak is 28", indicating excellent crystalline quality. We further simulated the measured rocking curves using a four-layer model including an InAs layer, a GaSb layer and two interface (IF) layers. The results show that the two IF layers are ternary compounds InAsSb. The Sb (or As) composition of the two ternary alloys depend on the specific interfaces. We also demonstrated that changing the growth condition, such as the As beam equivalent pressure (BEP) can affect the InAsSb composition as well, which provides an effective way to tune the strain in the superlatice structure. ... Read Full Abstract [PDF] |
20. | Prof. Weidong Chen, Université du Littoral Cote d'Opate, FRANCE Late-Breaking Results: Quantum Cascade Laser based Instrument for Fast Simultaneous Measurements of HONO and CH4 at 8 µm Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Weidong Chen is full Professor of Physics at the Université du Littoral Côte d'Opale (ULCO), France. He received his PhD degree in 1991 from the Université des Sciences et Technologies de Lille (USTL) in France. Prior to joining the ULCO in 1993, he was an assistant professor at the USTL where he conducted research focused on the development of laser sideband-based heterodyne THz spectrometer and its application to molecular rotation spectroscopy. His current research interests include developments of photonic (QCL, LED, optical parametric source etc) instrumentation for spectroscopic detection of trace gas molecules. He co-authored over 90 refereed technical papers. Summary: We report on the development of a continue-wave quantum cascade laser based instrument operating in the mid-infrared at 8 µm (~1254.6 cm -1) for simultaneous quantitative assessment of HONO and CH 4. Using direct absorption spectroscopy in a 125-m long multi-pass cell, 1s detection limits (1 sigma) of 0.4 and 6 ppb were achieved for HONO and CH 4, respectively. ... Read Full Abstract [PDF] |
21. | Dr. Timothy Day, Daylight Solutions, USA Late-Breaking Results: Late Breaking Results with Ultra Broad Tuning in External Cavity Quantum Cascade Lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Timothy Day: is a co-founder of Daylight Solutions and serves as the CEO and CTO for the company. Daylight Solutions is a manufacturer of advanced molecular detection and imaging products, serving markets that include Industrial Process Control, Medical Diagnostics, Defense and Security, and Fundamental Research using mid-IR lasers and sensor systems. Dr. Day has over 20 years' experience in both technical and business management in the photonics industry. He has led engineering, research, product development, manufacturing, and marketing operations. He started his career as a co-founder of New Focus, where he served from 1990 through 2004. During his time at New Focus, he was involved in all aspects of the company’s history, concluding with his work on the sale of the company to Bookham Technology PLC for $338M. While at New Focus he also contributed to the raising of over $500M though public and private equity offerings. From 1990 to the present, while at New Focus and Daylight Solutions, Dr. Day has developed extensive patent and product portfolios and transferred numerous products into production, both onshore and overseas. Summary: The mid-IR portion of the electromagnetic spectrum (~3-20 µm) is a feature-rich spectroscopic region. Most molecules have fundamental vibrational transitions in this region that are typically 30-1000 times stronger than overtones or combination bands that occur in the more easily accessible visible and near-infrared portion of the spectrum. Molecules with absorption bands in the mid-IR are of interest for a wide range of applications, from environmental monitoring to defense and security to bio-medical diagnostics. Many of these applications benefit from a source with broad tuning across the mid-IR range with both a narrow linewidth and broad wavelength tuning. One approach to controlling the linewidth and frequency of a QCL is to grow a Bragg Reflector epitaxially onto the surface of the waveguide. By controlling the temperature of the gain chip, this Distributed Feedback (DFB) system can be used to tune with narrow linewidth over a limited frequency range (~ 5-15 cm -1). Multiple DFBs can be combined on a device to expand the tuning range. Much more of the available gain bandwith may be exploited with even narrower linewidth by employing an External Cavity. Over 525 cm -1 of single mode tuning from a single QCL chip at 4.2 microns has been achieved, representing tuning of 22% of the center bandwidth. Late-breaking results exceeding tuning over 40% of the center wavelength will be presented. ... Read Full Abstract [PDF] |
22. | Dr. Gregory C Dente, GCD Associates, USA Late-Breaking Results: A New Solution Method for Mixed Boundary Value Problems: Applications to Current Injection in Semiconductor Lasers Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Gregory C. Dente received the Ph. D. degree in physics from Washington University, St. Louis, MO. In 1979 he joined the Perkin-Elmer Corporation, Danbury, CT. Five years later he moved to Albuquerque, where he began his own consulting business in 1985. Since completing his doctoral research in the area of quantum electrodynamics, his research experience has covered physical optics phenomena, laser theory, resonator and optical design and optical metrology. His current research efforts are in the areas of semiconductor lasers and optics. Summary: We have developed an iterative procedure for calculating solutions to Mixed Boundary Value Problems. The method has proven to be practical and accurate. First, we demonstrate the method by calculating injection current profiles from a metal contact plane into a single layer of finite conductivity material. Next, we show how the method readily adapts to much more complicated cases, such as injection current profiles for Quantum Cascade Laser (QCL) geometries. ... Read Full Abstract [PDF] |
23. | Dr. Nibir Dhar, DARPA/MTO, USA Plenary Talk: Enabling Technologies for Advanced Imaging Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Nibir Dhar joined the Microsystems Technology Office at DARPA in March 2008. He is interested in developing innovative technologies in a broad field that adds value to the warfighter's objectives in the areas of novel architectures in infrared detectors and imaging, nanoelectronics including NEMS/MEMS components, novel materials synthesis techniques, bio-inspired concepts, and new modality power sources and storage. of
Dr. Dhar comes from the Army Research Laboratory (ARL) where he led the Integrated Power and Sensing Technology group to develop infrared sensors, soldier portable power sources (solar cells and thermoelectrics), thin films, nanomaterials development and integration of sensor/power technologies. Dr. Dhar was responsible for a wide variety of infrared focal plane array technology including mercury cadmium telluride materials and focal plane arrays (FPA), quantum well infrared photodetectors, Type-II strained layer superlattice, quantum dot infrared detecto rs and inter-band cascade Lasers.
Prior to joining ARL, Dr. Dhar worked as a research engineer for the Army's Research, Development and Engineering Center, Night Vision Electronic and Sensors Directorate (NVESD) primarily working on infrared FPA. Dr. Dhar received a master’s degree and Ph.D. in Electrical Engineering from the University of Maryland at College Park in the area of Microelectronics and Electrophysics. He received a Bachelors's degree in Electrical and Computer Engineering from George Mason University.
Summary: Advances in imaging technology have huge impact on our daily lives. Innovations in optics, focal plane arrays (FPA), microelectronics and computation have revolutionized camera design. As a result, new approaches to camera design and low cost manufacturing is now possible. These advances are clearly evident in visible wavelength band due to pixel scaling, improvements in silicon material and CMOS technology. CMOS cameras are available in cell phones and many other consumer products. Advances in infrared imaging technology have been slow due to market volume and many technological barriers in detector materials, optics and fundamental limits imposed by the scaling laws of optics. There is of course much room for improvements in both, visible and infrared imaging technology. This presentation will describe the imaging vision of MTO, the technology challenges and projects currently fielded. In particular, description of new technology development under a portfolio program, “Advanced Wide Field of View Architectures for Image Reconstruction and Exploitation (AWARE)” will be described. ... Read Full Abstract [PDF] |
24. | Dr. Tadataka Edamura, Hamamatsu Photonics KK, JAPAN Invited Talk: Recent progress on Quantum Cascade Lasers development and Mid-IR applications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Tadataka Edamura received B.S., M.S. ansd Doctor degrees, all in applied physics, from Keio University, Yokohama, Japan, in 1990, 1992 and 1995 respectively. In 1995, he joined the Central Research Labs, HAMAMATSU PHOTONICS. Since 2010, he has been the Senior Researcher of the Material Research Group. Summary: During the last decade, the development of Mid-IR (4-11 μm) Quantum Cascade Lasers (QCLs) has shown a substantial progress leading to the commercial availability of such devices. In developing newly high performance QCLs, we have focused high output power QCL for laser surgery. Recently, the selective caries removal treatment technique without serious thermal damage for a normal dentin has been required. The potential application of selective caries removal by high output power QCL emitting at 6μm wavelength range is investigated. This wavelength range is expected to be absorbed to organic matter (for example, Amide I -band). We will present the latest status of the Mid-IR QCLs together with the some results of demonstrations for medical applications; selective caries removal treatment. ... Read Full Abstract [PDF] |
25. | Dr. Matthew Escarra, California Institute of Technology, USA Invited Talk: Quantum cascade laser-based CO2 isotope sensing: devices, systems, and implications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Matthew Escarra is a Postdoctoral Scholar in Applied Physics and Materials Science at the California Institute of Technology working with Prof. Harry Atwater. At Caltech, Matthew is developing spectrum splitting photonic architectures and solar cells for high efficiency solar energy conversion. Matthew received a PhD in Electrical Engineering at Princeton University, in the group of Prof. Claire Gmachl, where he focused on high performance quantum cascade lasers and mid-infrared metamaterials. Prior to Princeton, Matthew earned a BS in Electrical Engineering at Rice University. Matthew has also worked at Daylight Solutions and Sentinel Photonics, two start-ups in the mid-infrared optoelectronics community. Summary: CO2 fingerprinting via isotope ratio measurements offers the potential to address several important technological and societal issues. Tracking the relative concentrations of 12CO 2, 13CO 2, and 18OCO (the CO 2 fingerprint) across different environments can improve our understanding of the carbon cycle. A sensor network can be used to measure spatial and temporal fluxes of CO 2 isotopes for monitoring emissions and verifying abatement from particular sites. In enhanced oil recovery or carbon capture and storage (CCS), a network of sensors can monitor the area surrounding underground reservoirs for leaks, by searching for the fingerprint corresponding with the injected CO 2. In this talk, I will discuss the design and development of distributed feedback QC lasers for trace gas detection of strong lines of the less abundant 13CO 2 and 18OCO and a weaker line of the abundant 12CO 2. I will then highlight the development of a QC-laser based sensor for CO 2 isotope detection at Sentinel Photonics. Finally, I will discuss the potential economic impact of this type of sensing technology, quantified via an integrated climate-economy model. ... Read Full Abstract [PDF] |
26. | Dr. Henry Everitt, Army' Aviation & Missile Research, Development, and Engineering Center, USA Late-Breaking Results: Double Resonance Spectroscopy for Remote Sensing of Trace Molecular Gases Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Everitt is the chief scientist of the Army's Aviation & Missile Research, Development, and Engineering Center, Weapons Sciences Directorate. There, he leads two active research groups and advises the Army and DoD on a variety of emerging technologies. One lab focuses on plasmonics and the ultrafast optical characterization of wide bandgap semiconductor heterostructures and nano structures. Another lab focuses on developing THz spectroscopic and imaging techniques, serving as an honest broker for the Army in emerging THz technologies. Summary: The remote sensing of gases in complex mixtures at atmospheric pressure is a challenging problem and much attention has been paid to it. The most fundamental difference between this application and highly successful astrophysical and upper atmospheric remote sensing is the line width associated with atmospheric pressure broadening, ~ 5 GHz in all spectral regions. This talk will quantitatively present a new approach that would use a short pulse infrared laser to modulate the submillimeter/terahertz (SMM/THz) spectral absorptions on the time scale of atmospheric relaxation. This scheme has three important attributes: (1) The time resolved pump makes it possible and efficient to separate signal from atmospheric and system clutter, thereby gaining as much as a factor of 10 6 in sensitivity, (2) The 3-D information matrix (infrared pump laser frequency, SMM/THz probe frequency, and time resolved SMM/THz relaxation) can provide orders of magnitude greater specificity than a sensor that uses only one of these three dimensions, and (3) The congested and relatively weak spectra associated with large molecules can actually be an asset because the usually deleterious effect of their overlapping spectra can be used to increase signal strength. ... Read Full Abstract [PDF] |
27. | Dr. Ian Ferguson, University of North Carolina at Charlotte, USA Invited Talk: Spinning; Dazed and Confused: GaN-based Spin Polarized Emitters Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Ian T. Ferguson is currently a Professor and the Chair of Electrical and Computer Engineering at the University of North Carolina at Charlotte. His current research currently focuses on the area of wide bandgap materials and devices using GaN and ZnO, and developing these materials for energy and nanotechnology applications in the area of illumination, solar, spintronic and nuclear detection applications. He has have authored over 380 refereed publications, seven book chapters, eleven conference proceedings, one book and multiple patents. He is a Fellow of SPIE, IEEE and IOP and has received a National Small Business Association Tibbets Award. Summary: Wide bandgap dilute magnetic semiconductors (DMS) have recently been of interest due to theoretical predictions of room temperature ferromagnetism in these materials. Tremendous progress has been made in doping the IIINitrides with transition metals or rare earth elements with the aim of obtaining room temperature ferromagnetism. However, the mechanism for the observed ferromagnetism in this system is still not clear. The authors of this work have produced the only reports of Ga 1-xGd xN thin films grown by metalorganic checmical vapor deposition (MOCVD). These films were found to be ferromagnetic at room temperature and electrically conducting, However, it was only materials produced using TMHD 3Gd, which contains oxygen, that showed strong ferromagnetism; material grown using Cp 3Gd, which does not contain oxygen, did not show ferromagnetic behavior. In this paper, Ga 1-xGd xN films grown with these two different metalorganic precursors are summarized and the first successful demonstration of Ga 1-xGd xN-based spin-polarized LED is detailed. ... Read Full Abstract [PDF] |
28. | Dr. Marc Fischer, nanoplus GmbH, GERMANY Invited Talk: Distributed feedback lasers for gas sensing in the 3.5 μm wavelength range Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Marc Fischer is divisional director for device fabrication at nanoplus GmbH with their clean room facilities in Gerbrunn and Meiningen, Germany. He is responsible for the manufacturing of laterally coupled DFB lasers and related process development. At nanoplus he also contributed to various national and international research activities on novel laser sources and served e.g. as project manager for the EU project SENSHY focusing on photonic gas sensors for the detection of hydrocarbons. Marc Fischer received his PhD degree from Würzburg University in 2003 based on his work on GaInNAs/GaAs laser structures for future telecom applications. Summary: The wavelength range around 3.5 μm is of particular technological and industrial importance since the fundamental absorption bands of many relevant hydrocarbons are located in this range. Two GaSb based approaches to application-grade semiconductor lasing in the 3 - 4 μm wavelength region have been proven especially successful over the past years. These concepts use type-I transitions in quinary AlGaInAsSb barrier confined quantum wells or type-II transitions within a cascade scheme, respectively. Tunable laser spectroscopy (TLS) is a versatile and very successful approach making use of such laser sources for high performance trace gas detection. A crucial requirement for TLS is the availability of spectrally monomode emitters. In this talk, we will report on monomode DFB laser sources as well as multi-section devices with extended tuning range in the wavelength range of interest. ... Read Full Abstract [PDF] |
29. | Dr. Siamak Forouhar, Jet Propulsion Lab, USA Invited Talk: Record high-power laterally coupled distributed-feedback lasers in the 2–3 μm wavelength range Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Siamak received his Ph.D. in Electrical Engineering from the University of California, San Diego in 1983. In 1987, he joined the Jet Propulsion Laboratory in 1992. During his tenure at JPL he developed the world's first InGaAs strained layer laser in the 1.8-2.1 micron range and lead the delivery of those lasers to Mars 98' mission. He is currently the Deputy Director of Microdevices Laboratory at JPL and still leads a group developing unique semiconductor lasers for space applications. He has been awarded the NASA Exceptional Engineering Achievement Award for the development of tunable diode lasers for planetary in-situ studies. Summary: Lasers operating in the 2.0-3.0 μm spectral range are of particular interest for spectroscopy and atmospheric studies. High-performance semiconductor lasers have been demonstrated in this wavelength range based on InGaAsSb/AlGaAsSb alloys. Typically, these structures employ molecular-beam epitaxy (MBE) to grow compressively strained multi-quantum-well active layers of InGaAsSb sandwiched between lattice-matched AlGaAsSb waveguide layers on GaSb substrates. In spite of excellent results reported on broad-area and Fabry-Perot lasers, the development of single-frequency lasers suitable for gas spectroscopy has been limited. Conventional fabrication of DFB lasers incorporating buried gratings for longitudinal mode selection is extremely challenging due to the difficulty of epitaxial regrowth over GaSb alloys. An alternative method for DFB fabrication makes use of Bragg gratings etched alongside a ridge waveguide to form a laterally coupled distributed-feedback (LC-DFB) laser. This approach enables fabrication of single-longitudinal-mode lasers following a single epitaxial growth process. However, all the demonstrated lasers to date have relied on deposited metal gratings that provide strong feedback but generate additional absorption loss in the laser cavity, which limits the output power of the lasers to only few milliwatts. In this work, we report on high-power LC-DFB lasers with etched gratings. ... Read Full Abstract [PDF] |
30. | Dr. Mark J. Furlong, Wafer Technology / Galaxy Compound Semiconductors (IQE Plc), UK Invited Talk: Growth and characterization of large diameter GaSb substrates Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Mark J. Furlong is the General Manager of Wafer Technology Ltd. and Galaxy Compound Semiconductors Inc. Prior to this he held the position of Technical Sales Manager (Asia) at IQE (Europe) Ltd. Over 1997-1999, he was based at EPI Ltd. where he assumed various technical management roles. Prior to this Furlong was awarded a research fellowship (Royal Society, London) to develop novel photovoltaic cells with the CNRS (Paris). He holds a Ph.D. degree in semiconductor science from the University of Bath and a B.Sc. (Hons.) degree in Chemistry from the University of London. He also holds a Diploma in Management (Dist.) from the Open University, U.K. Summary: Gallium antimonide (GaSb) is an important Group III-V compound semiconductor for photodetectors that operate in the mid (3-5 μm) to the long wavelength region (8-12 μm) of the infrared (IR) spectrum. Interest in these materials is driving the development of several new detection technologies that are important for military, industrial and medical applications. Furthermore, several niche applications for antimonides also exist which include mid-infrared edge emitting lasers, ultra-high mobility transistors, magnetic sensors and thermo-photovoltaic cells. ... Read Full Abstract [PDF] |
31. | Dr. Alban Gassenq, Photonics Research Group, Ghent University-IMEC, BELGUM Late-Breaking Results: Laser and photodetector integration on Silicon-on-insulator waveguide circuits: towards a fully integrated SWIR spectrometer Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Born in Montpellier in 1983, he received his diploma in opto-electronic engineering from the University of Montpellier 2 (UM2) in 2006. He then worked towards a PhD degree in the Nanomir group of the Institut d'Electronique du Sud at UM2. He got the PhD degree in Semiconductors for MidIR applications in 2010. Now, he works in the Photonics Research Group of Ghent University - IMEC in Belgium on Mid-IR integrated optics. Summary: The mid-IR is an interesting wavelength range enabling new applications for photonic integrated circuits. Silicon-on-insulator (SOI) waveguide circuits combined with III-V opto-electronic components provide a platform to realize a fully integrated spectrometer for sensing applications. The availability of an integration platform for this wavelength range could enable ultra-compact, low-cost sensor solutions that outperform existing solutions by their selectivity and sensitivity. For this objective, either a tunable laser source needs to be integrated or an SOI spectrometer combined with an array of photodiodes at its outputs is needed. In this work, we investigate this III-V integration on a silicon-on-insulator waveguide circuit for operation around a wavelength of 2.2 µm, based on the GaSb material system. Different photodiode designs are studied, showing a high responsivity (>1 A/W) and a dark current of 2 µA at room temperature. The first integration of a photodetector array on top of a silicon-on-insulator planar concave grating (PCG) spectrometer is reported. For the GaSb-based laser, continuous wave (CW) operation is measured at room temperature for a bonded laser that is mechanically cleaved. Different possibilities to couple the laser emission into the silicon waveguide will be presented that allow the completion of the laser integration. ... Read Full Abstract [PDF] |
32. | Mr. Mostafa Ghorbanzadeh, University of Tehran, IRAN Poster: The Impact of Fixed Oxide Charge Density on the Performance of InSb Infrared Focal Plane Arrays Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Mostafa Ghorbanzadeh: started his study in electronics engineering at the Ferdowsi University of Mashhad, Iran, in 2006. He started his M.Sc. degree at the University of Tehran, Iran in 2011. In 2011 he began to work on his master thesis in the MEMS & NEMS Lab and UTCAD Lab under Prof. M. Fathipour supervision. His research interests
are in optoelectronics, solid state physics, nanoelectronics and III/V semiconductors. Currently, he has focused his work on InSb IRFPA design, fabrication and characterization. Summary: Recently, large-format and small-pitch InfraRed Focal Plane Arrays (IRFPAs) has been developed for high resolution thermal images. By scaling, FPA's Performance decreases due to increase in surface effects. Surface effects can be controlled by controlling surface potential. Surface potential depends on fixed oxide charges in passivation layer. Density of fixed oxide charge in passivation layer can be controlled by varying passivation conditions and methods. These charges can be negative or positive for InSb substrate. For example has reported that negative fixed oxide charge can be fabricated with combination of anodic oxide and Photo-CVD passivation layer. ... Read Full Abstract [PDF] |
33. | Prof. Matthew Grayson, Northwestern University, USA Poster: Transverse Thermoelectrics as Monolithic Peltier Coolers for Infrared Detectors Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Matthew Grayson specializes in quantum electronic devices and quantum transport and has developed various new geometries for III-V semiconductor crystal growth. He received his PhD at Princeton University in Electrical Engineering and conducted post-doctoral research at U. Maryland as well as the Tech. Univ. Munich, before his appointment as Assistant Professor at Northwestern University. His research spans topics including quantum Hall edge tunneling spectroscopy, novel cleaved-edge overgrowth structures, semiconductor quantum wires, Luttinger liquids, corner overgrowth fabrication of bent quantum wells, the bent quantum Hall effect, and infrared Hall effect in high temperature superconductors. Summary: Transverse thermoelectrics are anisotropic conductors with large off-diagonal component in the Seebeck tensor, wherein longitudinal currents induce transverse heat flow. The operating principle behind a new class of transverse thermoelectrics is reviewed, requiring predominantly n-type conduction in one direction, and p-type orthogonal. The type II InAs/GaSb broken-gap superlattice is one material whose band-structure manifests this behavior. A novel transverse thermoelectric geometry for pixel cooling is described, which can be adapted for monolithic integration with type II superlattice photodetector arrays. Because these thermoelectrics require simultaneous but perpendicular electron and hole conduction, we call them orthogonally ambipolar transverse thermoelectrics. ... Read Full Abstract [PDF] |
34. | Mr. Tobias Gruendl, Technische Univ Muenchen, GERMANY Late-Breaking Results: Type-II Quantum Wells for InP based mid-IR Devices Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Tobias Gruendl was born in Tegernsee/Bavaria Germany (1981). He received the Dipl.-phys. degree in semiconductor physics from the Technische Universitaet Muenchen, Germany, in 2007. He is currently working towards his PhD degree in Prof. Amann's group at the Walter Schottky Institute in Garching. He is mainly engaged in the design and manufacturing of InP-based high-power, high-speed short-cavity vertical-cavity-surface-emitting-lasers (SC-VCSELs) and Micro-Electro-Mechanical-System devices (MEMS VCSELs). He received three times the first price at international workshops/conferences (iNow 2010/2011 and IPC 2011) and has authored and co-authored 11 papers in leading scientific journals and 30 proceedings including 4 invited papers. Summary: As many gases like CH4, CO, NO and CO2 are showing strong absorption lines in the mid-IR regime new light emitting sources around 3 μm emission wavelength are continuously gaining increasing importance. The nowadays most commonly known application might be Tunable-Diode-Laser-Absorption-Spectroscopy (TDLAS). Despite of many attempts shifting the wavelength of InP based devices into the mid-IR restrictions originated from epitaxial growth, in particular strain induced relaxation have defined a 2.3 μm laser emission as longest accessible wavelength for this substrate over years. Ongoing investigations on the antimony based material systems recently offered laser emissions from 2.0 to 3.6 μm in edge emitting lasers. However, due to higher costs and worse crystalline quality of GaSb substrates and as process technologies on GaSb substrates are not as well-established as the InP ones it proved to be more worthwhile to modify active regions based on InP for entering wavelengths far beyond 2 μm. ... Read Full Abstract [PDF] |
35. | Prof. Yi Gu, Shanghai Institute of Microsystem and Information Technology, CHINA Late-Breaking Results: InAlAs metamorphic buffer with digital alloy intermediate layers for InP-based 2–3 μm devices Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Gu Yi: received the B. S. degree in physics from Nanjing University, China, in 2004 and the Ph. D. degree in microelectronics and solid state electronics from Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, in 2009. He is currently an assistant professor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, working on design and MBE growth of semiconductor optoelectronic devices, including InGaAs PIN and APD photodectors, QCLs, InP-based MIR lasers and so on. Summary: InP-based InGaAs photodetectors and lasers in near-infrared wavelength have been widely developed for fiber communication applications. By increasing the indium content in the InGaAs absorption layer of photodetectors or quantum well layer of lasers, the wavelength can be shifted to mid-infrared 2-3 μm range, which offers some advantages comparing with GaSb-based structures. However, a large lattice mismatch with respect to InP substrate is introduced. This problem can be partly overcome by constructing a virtual substrate on InP substrate, which is so-called "metamorphic buffer". The main challenges of metamorphic buffer are the rough interface and high density of threading dislocations (TDs), while various dislocation restriction techniques have been implemented to reduce the TD density of metamorphic buffer. In the past, digital alloy (DA) has been applied as an option for the growth of ternary or quaternary materials of various compositions by molecular beam epitaxy (MBE) without additional source cells or laborious growth interruption for cell temperature changes, and has been proved effective to decrease the strain energy and suppress the three-dimensional growth mode. In this work, we incorporate InAs/In 0.52Al 0.48As DA layers with InP-based InxAl1-xAs graded metamorphic buffer, and the TD suppression effects of DA intermediate layers are reported. ... Read Full Abstract [PDF] |
36. | Dr. Sarath Gunapala, Jet Propulsion Lab, USA Late-Breaking Results: Modulation Transfer Function of Infrared Focal Plane Arrays Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Sarath Gunapala received his PhD in physics from the University of Pittsburgh in 1986. Since then he studied infrared properties of III-V compound semiconductor hetero-structures and the development of quantum well infrared photodetectors (QWIPs) for infrared imaging at AT&T Bell Laboratories. In 1992, Dr. Gunapala joined NASA's Jet Propulsion Laboratory at the California Institute of Technology where he is a senior research scientist, a principal member of the engineering staff, and the director of the Center for Infrared Sensors. Dr. Gunapala has authored over 250 publications, including eleven book chapters, and holds twenty two U.S. patents. He has received the NASA Exceptional Engineering Achievement Medal and is a fellow of the SPIE society. Summary: Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. Consider a bar pattern with a cross-section of each bar being a sine wave. Since the image of a sine wave light distribution is always a sine wave, the image is always a sine wave independent of the other effects in the imaging system such as aberration. Usually, imaging systems have no difficulty in reproducing the bar pattern when the bar pattern is closely spaced. However, an imaging system reaches its limit when the features of the bar pattern get closer and closer together. ... Read Full Abstract [PDF] |
37. | Mr. Abbas Haddadi, Northwestern University, USA Poster: Low-frequency noise in mid-wavelength infrared type-II superlattice focal plane arrays Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Abbas Haddadi received the B.S. degree in electrical and computer engineering from the University of Tehran, Tehran, Iran, in 2007. He joined to Center for Quantum Devices at 2009. He is currently pursuing the Ph.D. degree in electrical engineering and computer science with Northwestern University, Evanston, IL. His current research interests include optical and electrical characterizations of Type-II InAs/GaSb superlattice based focal plane arrays. Summary: The type-II InAs/GaSb superlattice material platform has demonstrated itself as a promising alternative to HgCdTe technology for detection and imaging in the mid-wavelength infrared (MWIR) regime. This is due to the incredible growth in the understanding of the material properties and improvement of the device processing which have led to design and fabrication of better devices. The successful demonstration of 320×256 MWIR focal plane arrays (FPAs) together with the band-structure engineering capabilities of this material system make this technology a good candidate for the development of high operating temperature MWIR infrared imaging systems. However, MWIR FPAs suffer from low-frequency noise (LFN), like any other infrared imaging technology. In order to making better infrared imaging systems, we need to investigate the origin of the LFN and reduce it. It is also essential to study this kind of noise within the context of different parameters such as integration time and operating temperature. We present the LFN measurement results of a MWIR type-II superlattice FPA ... Read Full Abstract [PDF] |
38. | Prof. Mark Hersam, Northwestern University, USA Late-Breaking Results: Infrared Optoelectronic Properties and Applications of Monodisperse Carbon Nanomaterials Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Mark C. Hersam is currently a Professor of Materials Science and Engineering, Chemistry, and Medicine at Northwestern University. He earned a B.S. in Electrical Engineering from the University of Illinois at Urbana-Champaign (UIUC) in 1996, M.Phil. in Physics from the University of Cambridge in 1997, and a Ph.D. in Electrical Engineering from UIUC in 2000. His research interests include nanofabrication, scanning probe microscopy, semiconductor surfaces, and carbon nanomaterials. Dr. Hersam is a Fellow of MRS and SPIE in addition to serving as the Chair of the AVS Nanometer-scale Science and Technology Division and as Associate Editor of ACS Nano. Summary: Carbon nanomaterials have recently attracted significant attention in the research community. This talk will highlight our latest efforts to develop solution-phase strategies for purifying, functionalizing, and assembling carbon nanomaterials into functional arrays. For example, we have recently developed a scalable technique for sorting surfactant-encapsulated single-walled carbon nanotubes by their physical and electronic structure using density gradient ultracentrifugation (DGU). The DGU technique also enables graphene to be sorted by thickness, thus expanding the suite of monodisperse carbon nanomaterials. The resulting monodisperse carbon nanomaterials enhance the performance of field-effect transistors, infrared optoelectronic devices, sensors, transparent conductors, and photovoltaics. ... Read Full Abstract [PDF] |
39. | Mr. Robert Hinkey, Univ of Oklahoma, USA Late-Breaking Results: Dark current modeling of interband cascade infrared photodetectors Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Mr. Robert Hinkey was born in Baltimore, Maryland in 1985. He received a Bachelor of Science in Physics in 2007 from Loyola College in Maryland. Since 2008, he has worked in the OU Quantum Devices group under Prof. Rui Yang, conducting research on semiconductor devices based on quantum structures. He received a Master's Degree from the University of Oklahoma in Engineering Physics, and is currently pursuing the Ph.D degree, which he aims to complete in 2013. His doctoral dissertation topic is the design, modeling, and characterization of interband cascade structures for mid-infrared photodetectors and photovoltaic devices for energy conversion. He also collaborates with other members of the group on the development of long-wavelength interband cascade lasers. Summary: Interband cascade infrared photodetectors (ICIPs) employ a flexible device architecture designed to overcome short diffusion lengths and achieve high performance in photovoltaic devices based on InAs/GaSb superlattice (SL) absorbers. This is done by substituting the standard long single absorber (typically > 2.0 μm) for a group of shorter discrete absorbers (e.g. 0.1-0.2 μm). The conduction and valence bands of adjacent absorbers are connected in series using an interband tunneling heterostructure. This heterostructure consists of an electron barrier formed from GaSb/AlSb quantum wells (QWs) and a hole barrier formed from InAs/AlSb QWs, and is designed to facilitate a preferred carrier transport direction. The absorbers are sandwiched between the interband tunneling heterostructures, and the device exhibits the rectifying behavior required for photovoltaic operation. This architecture is similar to the “stacked multijunction” approach, which has been proposed in the past for realizing uncooled operation in MCT-based photovoltaic detectors, but has not received much attention in the literature. In this work, we will present our initial efforts in modeling ICIPs under non-equilibrium conditions. Here, we focus on the case where the dark current is solely due to generation-recombination processes in the absorber. The thermalization of carriers (due to drift-diffusion processes) within the absorber and interband tunneling heterostructure region is assumed to occur on a timescale much faster than the generation-recombination processes. Under this approximation, the holes within the valence band of one absorber are in equilibrium with the electrons in the previous absorber, and thus share a common chemical potential. ... Read Full Abstract [PDF] |
40. | Mr. Anh Hoang, Northwestern University, USA Poster: Type II InAs/GaSb/AlSb superlattice photodiodes for shortwavelength infrared detection Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Anh Minh Hoang: was born in 1986 in Vietnam. He received a B.S. in Physics from l'Ecole Polytechnique, Palaiseau, France, in 2009. He is currently pursuing the PhD degree in Electrical Engineering under the supervision of Professor M. Razeghi at Center for Quantum Devices, Northwestern University, Evanston, IL. His research interests are modeling, design and growth of Type-II InAs/GaSb photodetectors. Summary: One of the requirements of the third generation infrared imager is multiple spectral detections with wider bandwidth. With unique advantages over thermal and visible band owning to its ability to offer infrared radiation detection in both active and passive modes, the shortwavelength infrared (SWIR) band finds its applications in many important sectors. Combining SWIR and longer regimes are of particular interest since SWIR regimes enables imaging conditions close to visible perspective while a longer detection channel operates in passive mode with no additional illumination. Type II superlattice (SL) has been proving itself as good candidate for mid-wave to very long wavelength infrared detections with comparable performance to the state-of-the-art technologies. However, in the SWIR regime, Type II SL detectors haven't been able to achieve great performance. In this work, we presented strategies to overcome design and material growth challenges and demonstrated high performance SWIR detector based on Type II SL. ... Read Full Abstract [PDF] |
41. | Prof. Eduard Hulicius, Czech Technical University, CZECH REPUBLIC Late-Breaking Results: Superlinear electroluminescence from deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Assoc. Prof. Ing. Eduard Hulicius, PhD Born in Prague, Czechoslovakia. Education and professional career: Graduated from the Faculty of Nuclear and Physical Engineering of the Czech Technical University in Prague in 1973. He was granted the PhD degree in 1981, Associated Prof. at Czech Technical University in Prague from 2005. Affiliation: Inst. of Phys., Czech AS; Head of MOVPE lab. Fields of scientific activity: Semiconductor lasers, LED and laser structures especially for mid-infrared wavelength region. MOVPE technology, AIIIBV nanostructures. Characterisation of optical, electr. and structural prop. of semiconductors. Summary: The first observation of superlinear electroluminescence and enhancement of optical power in nano-heterostructures based on GaSb with a deep, narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by metal organic vapor phase epitaxy will be reported. Structures were grown on n-GaSb:Te substrate with 20 nm Al(As)Sb/5 nm InAs 0.84Sb 0.16/20 nm Al(As)Sb QW and 0.5 μm p-GaSb cap layer. Superlinear EL power dependence on driving current was found at T = 300 and 77 K. This effect can be explained by electron impact ionization in Al(As)Sb/InAsSb QW in which a large conduction band offset at the interface. ... Read Full Abstract [PDF] |
42. | Prof. Shanthi Iyer, North Carolina A&T State University, USA Late-Breaking Results: Heteroepitaxial Growth of Dilute InSbN on GaAs by Molecular Beam Epitaxy for Long Wavelength Infrared Applications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Dr. Shanthi Iyer completed her doctorate in physics at the Indian Institute of Technology, Delhi, India in 1983. Her dissertation work was focused on transparent and conducting oxides by spray pyrolysis and transparent conducting oxide/Si solar cells. She joined the faculty rank in the Department of Electrical and Computer Engineering at North Carolina A&T State University in 1981 and since then has been working on compound semiconductors. Currently she holds a joint faculty
appointment with Joint School of Nanoscience and Nanoengineering at Greensboro. Prof. Iyer has been responsible for the initiation and development of NCA&TSU’s state of the art Molecular Beam Epitaxy (MBE) Laboratory and associated academic and research programs. Her current research work in the MBE growth, characterization and nanostructured device fabrication is based on novel dilute nitride
antimonide narrow band gap compound semiconductors for infrared sources and detectors, encompassing a wide infrared wavelength region from 1 μm to 20 μm. She was also the Director of the Center of Excellence for Battlefield Capability Enhancements at NCA&TSU, which focused on developing technologies for environmentally stable flexible panel displays. The other research projects in progress include transparent amorphous oxide thin film transistors on plastic substrates for flexible electronics. Summary: The distinguishing feature of dilute nitride III-V semiconductors lies in large simultaneous reduction in the band gap and lattice parameter, when N is incorporated in small amounts in an otherwise wide band gap III-V material system. In particular, N incorporation in InSb is attracting great attention due to potential applications in the long wavelength infrared (LWIR) applications. However, relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with enhanced N concentration. Hence optimization of growth conditions is critical to the growth of high-quality InSbN epilayers for device applications. In this paper, we report on the correlation of structural, vibrational, electrical and optical properties of molecular beam epitaxially (MBE) grown InSbN epilayers grown on GaAs substrates, as a function of varying growth temperatures, annealing and doping. Two dimensional (2D) growth of InSb and InSbN epilayers were confirmed from dynamic reflection high energy electron diffraction (RHEED) patterns. High crystalline quality of the epilayers is attested to by a low full width at half maximum (FWHM) of 200 arcsec from high resolution x-ray diffraction (HRXRD) scans and by the high intensity and well-resolved InSb longitudinal optical (LO) and 2 nd order InSb LO mode observed from micro-Raman spectroscopy. The active N incorporation in these InSbN epilayers is estimated to be 1.4 % based on HRXRD simulation. Lower growth temperature of 290 °C was found to be optimum for the formation of more substitutional N (in the form of In-N) and less interstitial N (in the form of Sb-N, N-N and In-N-Sb) in the InSbN epilayers, while higher growth temperature of 380 °C promotes the formation of In-N-Sb bonding. The best room temperature (RT) and 77 K electrical transport parameters and maximum redshift in the absorption edge have been achieved in the InSbN epilayer grown in the 290 °C ~ 330 °C temperature range. Annealing was observed to lead to improved quality of the layers as attested by Raman spectra with reduction in the background carrier concentration from 10 18 cm -3 from as-grown to 10 16 cm -3 and mobility in 10 4 cm 2/V·s range. However the net N incorporation also reduced during the process and absorption edge shifted from ~9 µm to ~10 µm. Improvement in the quality of the as-grown epilayers with enhanced N incorporation in lightly p-doped layers will also be presented in this work. ... Read Full Abstract [PDF] |
43. | Prof. Bahram Jalali, Univ of California Los Angeles, USA Invited Talk: Silicon photonics in midwave and longwave infrared Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Bahram Jalali is the Northrop Grumman Optoelectronics Chair Professor of Electrical Engineering at UCLA with joint appointments in Biomedical Engineering Department and California NanoSystems Institute. He is a fellow of IEEE, OSA and APS and the winner of the 2007 R.W. Wood Prize for the demonstration of the silicon Raman laser. Summary: Optical data communication is not the only area where silicon photonics will have an impact. Silicon and related group 4 crystals have excellent linear and nonlinear optical properties in the midwave and longwave infrared spectrum. These properties, along with silicon’s excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of midwave and longwave infrared photonic devices. As potential platforms for this new regime, a wide range of applications from gas detection, sensing to free space communications can be realized on low cost, chip-level integration. To transfer the knowledge from near infrared and apply them in this new regime, detailed understanding of the material properties is essential. For passive devices, the optical transparency of the materials used for waveguide design has to be well chosen and studied. In the midwave infrared range, the waveguides are likely to be built on silicon-on-insulator (SOI), silicon-on-sapphire (SOS), silicon-on-nitride (SON) and germanium-on-SOI (Ge/SOI), whose low-loss transmission range extends out to the wavelength of 3.7 μm for SOI, 4.4 μm for SOS, 6.7 μm for SON and 14.7 μm for Ge/SOI. The SOI waveguide has a propagation loss of less than 2 dB/cm over the 1.1 to 2.5 μm and 2.9 to 3.6 μm bands, with fairly high loss over 2.5 to 2.9 μm. Except for SOS, these longwave waveguides are untested at present. For active devices, it is known that group 4 materials lack second-order optical nonlinearity due to the centrosymmetric atomic arrangements. Thus, the lowest-order nonlinearity – third-order susceptibility χ(3), which gives rise to the Kerr and Raman effects, is the key. For nonlinear optical processes at longer wavelengths, there has been experimental realization for applications recently such as Raman amplification, wavelength conversion, optical parametric waveguide gain, and cascaded four-wave mixing for multi-line infrared sources. ... Read Full Abstract [PDF] |
44. | Mr. Ehsan Kamrani, Ecole Polytechnique, Montreal, CANADA Late-Breaking Results: Near Infra-Red Light Detection Using Silicon Avalanche Photodiodes: Design Challenges in Standard CMOS Technology Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Ehsan Kamrani: Ehsan received his B.Sc. degree in Biomedical engineering from SBMU, Iran, in 2002 and his Masters degree in Electrical and Control Engineering from TMU, Iran, in 2005. He has been with the Institute of Medical Engineering, Salamat-Pajooh-Bartar (05-09), MetaCo. (03-04), Ferdowsray (00,04), Saadat Co. (98-04) and Imen-Ijaz Inc. (99-00) working on design and development of biomedical imaging and real-time monitoring systems. From 2005 to 2009 he has been an Academic Member-Instructor in the Department of Electrical and Electronics Engineering, University of Lorestan, Iran. His expertises are on Analog integrated circuits, smart CMOS image sensors, wireless networked sensors, web-based control systems and biomedical signal/image processing. He published more than 30 papers in peer reviewed journals and conference proceedings. Since 2009 he has been doing his PhD on Biomedical Engineering at Polystim neurotechnologies Laboratory, Ecole Polytechnique, Montreal, Canada. He is working on design and implementation of an fNIRS photo receiver for real-time brain monitoring. From March 2012 he has joined Harvard Medical School and Wellman Center for Photomedicine, Massachusetts General Hospital in Boston, MA, USA working in an active bio-optics project for developing novel innovative technologies by integration of photonics and biological system aiming at developing a novel diagnostic optical instrument for medical applications. Summary: Silicon-based avalanche photodiodes (SiAPDs) fabricated using highly optimized dedicated processes to achieve excellent device performance can have low doped p and n layer resulting in wide depletion region extending from the cathode to the anode. Due to the availability of wide depletion region, they are efficient for absorption of red and NIR photons. Nevertheless, the SiAPDs fabricated in dedicated process have two major disadvantages: the production cost is very high due to the specialized fabrication process, and it is unfeasible to integrate electronic circuits on the same chip. Later several dedicated SiAPD fabrication technologies were proposed which are compatible with the fabrication of CMOS circuits, and therefore, monolithic integration of APD devices and CMOS circuits became possible. However, optimizing the performance of both the CMOS devices and the SiAPD is a non-trivial job. To overcome these problems, researchers have investigated the design and fabrication of SiAPDs in a standard CMOS process to reduce cost and to maximize miniaturization. The fabrication of SiAPDs in standard CMOS technology permits having both the photodetector and the necessary peripheral circuits on the same chip as an integrated system. However, it is challenging to make SiAPDs in standard CMOS technology due to lack of special fabrication steps. Furthermore, the realization of the APD has to be compatible with the CMOS process characteristics and the APD has to operate with a sufficient voltage, allowing for avalanche mode without destroying the device, particularly at the peripheral junction at the presence of Punch-through, high tunneling, and premature edge breakdown (PEB) effects. ... Read Full Abstract [PDF] |
45. | Dr. Peter Kaspersen, Norsk Elektro Optikk AS, NORWAY Invited Talk: Quantum Cascade Lasers in Industrial Applications Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Peter Kaspersen has held various positions in the Norwegian Electro Optics industry since he graduated from the University of Oslo in Semiconductor Laser Physics in 1969. He joined Norsk Elektro Optikk (NEO) as Technical and Commercial Director in 1992. He has been Managing Director in Norsk Elektro Optikk since 2003. In his positions at NEO he has been responsible for moving Tunable Diode Laser Spectroscopy from the first laboratory experiments in the early 90ties into a successful business venture in Gas Analysis. Summary: Near infrared tunable diode laser absorption spectroscopy (NIR-TDLAS) has been accepted by industrial users as the best available technology for in-situ emission and process control measurements. However, for some important gases the absorption line strengths and thus the sensitivities are too low (e.g. nitric oxide, NO) or the species does not possess any absorption features in the NIR (e.g. sulfur dioxide, SO 2). The fundamental absorption bands in the mid-infrared spectral region (MIR) are orders of magnitude stronger than the overtone and combination bands in the near infrared. For example, the best absorption line in the 5.2 µm-band of nitric oxide is approx. 750 times stronger than the best line in the 1.8 µm-band (using telecom diode lasers). In this paper an example of an important industrial application for a NO measurement and a solution using a quantum cascade laser (QCL) in a TDLAS gas monitor will be presented. ... Read Full Abstract [PDF] |
46. | Dr. Ron Kaspi, Air Force Research Lab. USA Late-Breaking Results: Ultra-low beam divergence and increased lateral brightness in optically pumped mid-infrared laser Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Born in Istanbul, Turkey in 1962, Dr. Kaspi received his bachelor’s degree in Mechanical Engineering from Duke University, his master’s degree in Materials Engineering from Rutgers University in 1986, and his Ph.D. in Materials Science and Engineering from Northwestern University in 1991. With expertise in the area of molecular beam epitaxy (MBE) of semiconductor heterostructures, Dr. Kaspi’s early research focused on surface segregation of alloys, interfacial mixing, and in-situ sensing during MBE. More recently, Dr. Kaspi has concentrated his efforts in the area of semiconductor mid-infrared lasers. He has developed and advanced the optically pumped semiconductor laser (OPSL), designed to emit in the mid-IR wavelengths using the antimonide family of semiconductors. Dr. Kaspi is currently a senior research scientist at the Air Force Research Laboratory in Albuquerque, NM, where he leads a group of scientists in developing semiconductor mid-infrared lasers that provide high brightness for a variety of applications. Dr. Kaspi is a fellow of the OSA. Summary: We have conducted a study in which we demonstrate that an optically pumped device can be engineered to extend the transverse mode a very large distance into the substrate. As a result, devices with ultra-low fast-axis divergence angles can be produced. As an important added benefit of the reduced overlap with the gain region, we also find that the lateral spatial coherence of the device is also greatly improved, resulting in ultra-low lateral divergence from a broad area optically pumped laser. Due to the latter, the brightness of the device is substantially increased. ... Read Full Abstract [PDF] |
47. | Dr. Haruyoshi Katayama, Japan Aerospace Exploration Agency (JAXA), JAPAN Late-Breaking Results: Development of type II superlattice detector for future space applications at JAXA Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: The author obtained Ph.D in 2003 at Osaka University, Department of Earth and Space Science. From 2003, he works at Japan Aerospace Exploration Agency (JAXA) as an engineer. From 2006, he is involved in the research and development of earth observation sensors. Summary: The performance of space-borne infrared detectors is required higher sensitivity, higher resolution, or larger format in comparison with that of ground-based infrared detectors. In order to realize higher mission requirements, JAXA decided to position the infrared detector technology as one of the strategic technologies of JAXA and to promote the development of the infrared detectors. ... Read Full Abstract [PDF] |
48. | Mr. Sean Keuleyan, University of Chicago, USA Late-Breaking Results: Mid-IR HgTe Colloidal Quantum Dots Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Sean is a fourth year graduate student in the Chemistry department at the University of Chicago. His work focuses on the development of colloidal materials for applications in the mid-infrared. He graduated with a B.S. in Chemistry with a second major in Film and Media Arts from Temple University in 2008. Summary: The past two decades have seen incredible interest and development of colloidal quantum dots (CQDs) in the visible and near-IR for light sources, detection. photovoltaics, and labeling. Colloidal nanocrystals though, may have a great unrealized potential in the mid-infrared, where solution preparation and processing enable low-cost devices, and an attractive alternative to photodetectors in the 3-5 μm range of wavelengths for some applications. Mid-infrared-active nanocrystals though are quite underdeveloped, due in part to poorly-controlled chemistry of the particle growth. By improving the chemical preparation of HgTe colloidal quantum dots, we have enabled the first studies of these materials into the mid-IR and their potential in mid-infrared detection and emission. ... Read Full Abstract [PDF] |
49. | Mr. Amir Khiar, Johannes Kepler University Linz, AUSTRIA Late-Breaking Results: Mid-infrared optically in-well pumped VECSEL Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Amir Khiar received the master degree in physics from Swiss Federal Institute of Technology Zürch, in 2009. From 2009 to 2011 he worked as a research associate at Laboratory for Solid State Physics at ETHZ. There he dealt with the fabrication and optimization of lead-salt mid-infrared VECSELs. Currently, he is working on his Ph.D. at the Johannes Kepler University Linz in Austria. His research interests are to fabricate high operating temperature long wavelength tunable VECSELs for infrared spectroscopic applications and in particular, to develop mid-IR VECSELs based on PbTe Dots in CdTe. Summary: In this work, the first optically in-well pumped vertical external cavity surface emitting laser (VECSEL) operating in the wavelength range beyond 3 μm is presented. In contrast to all edge emitting diode lasers, VECSELs are very attractive for spectroscopic sensing due to their very small beam divergence (<1°) and nearly perfect circular emission cone. Furthermore, VECSELs offers power scalability as a result of their nearly vertical heat flow and are generally optically pumped. IV-VI semiconductors, such as PbSe or PbTe, are very suited for fabrication of optoelectronic devices in the mid-infrared. The active region of our VECSEL is based on PbTe quantum wells (QWs) in CdTe. In this material system also active regions containing PbTe dots in CdTe can be produced. ... Read Full Abstract [PDF] |
50. | Mr. Hoo Kim, The University of Texas at Austin, USA Late-Breaking Results: Effect of square holes to reduce thermal mass in dipole patterned resistive sheets metamaterial microbolometer. Summary [+]  | Biography [+]  | Abstract [PDF]Speaker Biography: Hoo Kim is a current Ph.D. student of Electromagnetics Device Group in Microelectronics Research Center at the University of Texas at Austin. He received his B.S. and M.S. degrees in Elecrrical Engineering from POSTECH (Pohang University of Science and Technology) in 2004 and 2006, respectively. He worked as an officer and a full-time instructor in Korea Air Force Academy from 2006 to 2009 as well. His research interests are 3D multispectral microbolometer, its wavelength selective characteristics and application of frequency selective surface and metamaterials for microbolometer. Summary: In a microbolometer, the thermal mass is critical in determining the speed of the detector. In multicolor microbolometers, patterned metamaterial absorbers formed by crossed-slot holes in a conducting sheet can be used to produce spectrally selective absorption. From previous results from our group, we also know that square hole patterns in a conducting sheet work can act as a broadband absorber, and that when the holes are extended through a dielectric sheet that supports the metal efficient absorbtion can be maintained with substantial reduction thermal mass. In this paper, we suggest optimal sized square holes can reduce the thermal mass without changing spectral selectivity for narrowband absorption using crossed-dipole absorbers. The design uses dipole-like patterned resistive sheets on a perforated germanium support layer above an air gap and mirror. Absorption efficiency has been compared to the optimized case which has only a dipole resistive sheets without holes for cases both with and without mirror. In the long-wave infrared band, optimal perforation size has been studied with optimized dipole patterned resistive sheets to yield peak absorption at 10 micron. The perforations produce considerably reduced thermal mass (over 30%) at their optimal size. Also, interference between patterned resistive sheets and perforation size has been studied, showing this interference causes significant change in the peak absorption when the perforation area is increased beyond the optimal size. ... Read Full Abstract [PDF] |
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