MIOMD-XI Speakers    
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1.  Mr. Rachid Taalat, Univ. Montpellier 2, FRANCE
Late-Breaking Results: The influence of the InAs/GaSb SL period on the performance of type- II SL MWIR photodiodes
Speaker Biography: Rachid Taalat received his Master's degree in Physics and Engineering for microelectronics and nanotechnology materials from the University of Montpellier II, France, in 2010. he is currently pursuing the Ph.D. degree in Materials and Optronics systems at the Institut d'Electronique du Sud (IES) in Montpellier, France. My current research interests include device processing, optical and electrical characterizations of Type-II InAs/GaSb photodetectors.

Summary: MWIR InAs/GaSb SL pin photodiodes were fabricated by MBE on p-type GaSb substrate. Symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs for λc = 4.5 µm at 80 K, while asymmetric SL design was composed of 7 InAs MLs and 4 GaSb MLs for λc = 5 µm at 80 K. Electro-optical characterizations including dark current, noise and C-V measurements, spectral response and quantum efficiency were performed on single detectors in the temperature range (77 K-300 K). Analysis of dark current characteristics shows that the R0A value of asymmetric SL diode is improved by more than one decade in the whole range of temperature.
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