MIOMD-XI Speakers    
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1.  Mr. Benjamin Olson, University of Iowa, USA
Late-Breaking Results: Vertical transport in short-period InAs/GaSb superlattices
Speaker Biography: Recieved his B.S. in physics from Gustavus Adolphus College. He is currently pursuing his Ph.D. at the University of Iowa studying III/V semiconductors. His focus has been the use of ultrafast lasers to investigate carrier recombination dynamics and transport in mid-wave and long-wave infrared InAs/GaSb superlatiices.

Summary: The vertical diffusion of electron-hole pairs through a mid-wave infrared (MWIR) InAs/GaSb superlattice (SL) was measured using ultrafast pump-probe techniques. Vertical transport samples were grown where a lower-band gap SL was placed before the MWIR SL to act as a marker well. A 130 fs, short-wavelength optical pulse generated from an amplified titanium:sapphire laser was used to generate electron-hole pairs near the surface of the MWIR SL. A portion of the titanium:sapphire was used to pump an optical parametric amplifier, where through difference-frequency generation, an ultrafast probe tuned to the band gap energy of the marker SL was created. Ultrafast time-resolved differential transmission techniques were used to measure the time from carrier generation to arrival at the marker well. An ambipolar diffusion coefficient of 0.3 cm2/s was measured.
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