MIOMD-XI Speakers    
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1.  Mr. Lee Murray, University of Iowa, USA
Late-Breaking Results: Tunnel junction design and performance for cascaded InAs/GaSb superlattice light emitting diodes
Speaker Biography: Received his B.S. in physics from the University of California Santa Barbara. He is currently pursuing his Ph.D. at the University of Iowa studying growth of III/V semiconductors using molecular beam epitaxy, with a focus on InAs/GaSb superlattice light emitting diodes.

Summary: High-power cascaded superlattice light emitting diode (SLED) arrays emitting in the mid-infrared have become important for thermal scene generation in flat panel displays, and may also find application as broadband light sources for optical sensing of molecules. SLEDs take advantage of the engineerability of short period InAs/GaSb superlattices to tune the emission wavelength while suppressing Auger scattering, a particularly important characteristic when operating at high injection current densities. Cascading emission regions allows for matching the SLED current-voltage characteristics to control electronics while potentially reducing the detrimental effects of series resistance on device heating.
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