MIOMD-XI Speakers    
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1.  Dr. Jianxin Chen, Shanghai Institute of Technical Physics, CHINA
Late-Breaking Results: MWIR and LWIR InAs/GaSb Superlattice Infrared Photodetectors Grown by Molecular Beam Epitaxy
Speaker Biography: Jianxin Chen was graduated from Shanghai Institute of Metallurgy, Chinese Academy of Sciences. He has been working III-V compounds for about 20 years. He was with EPFL, Bell Labs, Lucent Technologies and Princeton University from 2000 to 2009. He is now with Shanghai Institute of Technical Physics, CAS.

Summary: High quality InAs/GaSb superlattice materials with sharp X-ray diffraction peaks were obtained. The 0th order satellite peak position has an angle distance of 16" to that of the substrate peak, corresponding to a lattice-mismatch of 1.5×10-4. The full width at half maximum (FWHM) of the 0th order satellite peak is 28", indicating excellent crystalline quality. We further simulated the measured rocking curves using a four-layer model including an InAs layer, a GaSb layer and two interface (IF) layers. The results show that the two IF layers are ternary compounds InAsSb. The Sb (or As) composition of the two ternary alloys depend on the specific interfaces. We also demonstrated that changing the growth condition, such as the As beam equivalent pressure (BEP) can affect the InAsSb composition as well, which provides an effective way to tune the strain in the superlatice structure.
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