MIOMD-XI Speakers    
FILTERS: Limit:   Type: expand all
Page 1  ( Items)

1.  Mr. Tobias Gruendl, Technische Univ Muenchen, GERMANY
Late-Breaking Results: Type-II Quantum Wells for InP based mid-IR Devices
Speaker Biography: Tobias Gruendl was born in Tegernsee/Bavaria Germany (1981). He received the Dipl.-phys. degree in semiconductor physics from the Technische Universitaet Muenchen, Germany, in 2007. He is currently working towards his PhD degree in Prof. Amann's group at the Walter Schottky Institute in Garching. He is mainly engaged in the design and manufacturing of InP-based high-power, high-speed short-cavity vertical-cavity-surface-emitting-lasers (SC-VCSELs) and Micro-Electro-Mechanical-System devices (MEMS VCSELs). He received three times the first price at international workshops/conferences (iNow 2010/2011 and IPC 2011) and has authored and co-authored 11 papers in leading scientific journals and 30 proceedings including 4 invited papers.

Summary: As many gases like CH4, CO, NO and CO2 are showing strong absorption lines in the mid-IR regime new light emitting sources around 3 μm emission wavelength are continuously gaining increasing importance. The nowadays most commonly known application might be Tunable-Diode-Laser-Absorption-Spectroscopy (TDLAS). Despite of many attempts shifting the wavelength of InP based devices into the mid-IR restrictions originated from epitaxial growth, in particular strain induced relaxation have defined a 2.3 μm laser emission as longest accessible wavelength for this substrate over years. Ongoing investigations on the antimony based material systems recently offered laser emissions from 2.0 to 3.6 μm in edge emitting lasers. However, due to higher costs and worse crystalline quality of GaSb substrates and as process technologies on GaSb substrates are not as well-established as the InP ones it proved to be more worthwhile to modify active regions based on InP for entering wavelengths far beyond 2 μm.
... Read Full Abstract [PDF]


Page 1  ( Items)