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1.  Dr. Ron Kaspi, Air Force Research Lab. USA
Late-Breaking Results: Ultra-low beam divergence and increased lateral brightness in optically pumped mid-infrared laser
Speaker Biography: Born in Istanbul, Turkey in 1962, Dr. Kaspi received his bachelor’s degree in Mechanical Engineering from Duke University, his master’s degree in Materials Engineering from Rutgers University in 1986, and his Ph.D. in Materials Science and Engineering from Northwestern University in 1991. With expertise in the area of molecular beam epitaxy (MBE) of semiconductor heterostructures, Dr. Kaspi’s early research focused on surface segregation of alloys, interfacial mixing, and in-situ sensing during MBE. More recently, Dr. Kaspi has concentrated his efforts in the area of semiconductor mid-infrared lasers. He has developed and advanced the optically pumped semiconductor laser (OPSL), designed to emit in the mid-IR wavelengths using the antimonide family of semiconductors. Dr. Kaspi is currently a senior research scientist at the Air Force Research Laboratory in Albuquerque, NM, where he leads a group of scientists in developing semiconductor mid-infrared lasers that provide high brightness for a variety of applications. Dr. Kaspi is a fellow of the OSA.

Summary: We have conducted a study in which we demonstrate that an optically pumped device can be engineered to extend the transverse mode a very large distance into the substrate. As a result, devices with ultra-low fast-axis divergence angles can be produced. As an important added benefit of the reduced overlap with the gain region, we also find that the lateral spatial coherence of the device is also greatly improved, resulting in ultra-low lateral divergence from a broad area optically pumped laser. Due to the latter, the brightness of the device is substantially increased.
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