MIOMD-XI Speakers    
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1.  Dr. Andrey Krysa, Univ of Sheffield, UK
Invited Talk: Metalorganic vapour phase epitaxy of GaInAs/AlInAs and GaAs/AlGaAs quantum cascade laser structures
Speaker Biography: Andrey Krysa received the Ph.D. degree from the Lebedev Physical Institute, Russian Acad. Sci., Moscow, Russia, in 1997. In 1995, he joined the Dept. of Optoelectronics at the Lebedev Institute and performed research on II-VI compounds. During 1999-2000, he was at the Institut für Halbleitertechnik, RWTH Aachen, Germany, where he was engaged in epitaxy of ZnSe-based structures. Since joining the National Centre for III-V Technologies, Sheffield, UK, in 2001, he has been engaged in MOVPE of the group III arsenides and phosphides. His current research interests include development of quantum cascade lasers and structures based on InP quantum dots. Dr. Krysa was awarded the Humboldt Research Fellowship in 1999 and holds the IET Optoelectronics Award 2008.

Summary: Metalorganic vapour phase epitaxy (MOVPE) has been successfully introduced by our group as an alternative growth technology of mid-IR InGaAs/InAlAs/InP quantum cascade lasers (QCLs). Later on, we have transferred this technology to a production type multi wafer MOVPE reactor. Many research groups and industrial companies have since followed our technological approach. Details, challenges and limitations of the QCL growth technology based on MOVPE will be discussed in my talk.
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