MIOMD-XI Speakers    
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1.  Dr. Bill Tennant, Teledyne Scientific and Imaging, USA
Plenary Talk: MWIR Detectors-- A Comparison of SLS Photodiodes with HgCdTe.
Speaker Biography: William E. Tennant: Fellow of Teledyne Scientific and Imaging (TS&I) and Chief Technologist in Teledyne Imaging Sensors (TIS). Dr Tennant received his AB in physics (magna cum laude) from Harvard University in 1967, and his PhD in solid state physics from the University of California at Berkeley in 1974. Since he joined TS&I (formerly Rockwell Science Center) in 1973, Dr. Tennant has held several line management and technical leadership roles, including the invention, development, and/or application of many of the key IR technologies now in use at TIS. He developed several analytical techniques for II-VI, III-V, and IV-VI materials and devices. Dr. Tennant oversaw and personally contributed to development of: device quality HgCdTe/sapphire (PACE-I), HgCdTe/GaAs and HgCdTe/Si, large sized intrinsic MWIR Focal Plane Arrays, HgCdTe laser diodes, novel image processing devices, producible MBE (molecular beam epitaxy) growth of HgCdTe, MBE HgCdTe in-situ passivation, substrate-removed Vis-IR HgCdTe focal plane arrays (FPAs), two-color detector architectures, and high operating temperature HgCdTe FPAs. His rule of thumb (“Rule 07”) accurately describes HgCdTe diode performance over a wide range of temperature and wavelength covering >12 orders of magnitude in dark current—enabling system users to predict performance and benchmarking other insurgent technologies to HgCdTe and showed that HgCdTe performs up to fundamental natural limits. Most recently he has helped guide Teledyne’s development of IR focal plane arrays in Sb-based Type-II strained layer superlattices. He has co-authored over 100 papers and presentations, holds fourteen patents, received the 1993 IRIS (now MSS) Detector Specialty Group Levinstein Award for "Outstanding Technical Leadership in the Infrared Community," received the 2011 MSS Detectors best paper award for his presentation on the DARPA AWARE program, was a Rockwell Engineer of the Year for the year 1999, is a Fellow of the Military Sensing Symposia, a senior member of IEEE, a member of Sigma Xi, and a member of the American Physical Society.

Summary: Although HgCdTe grown on CdZnTe substrates has been refined over several decades to become the highest performance production infrared detector material, it has in recent years been threatened by binary-binary GaSb/InAs Type-II Strained Layer Superlattices. These latter devices have reported literature values that approach those of HgCdTe in the higher operating temperature regime. This paper reviews the highest performance published SLS state of the art and compares that with state of the art HgCdTe performance.
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