MIOMD-XI Speakers    
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1.  Prof. Anthony Krier, Lancaster Univ., UK
Late-Breaking Results: Dilute Nitride Materials for Mid-infrared Optoelectronic Devices
Speaker Biography: Tony Krier obtained his PhD in 1983 and joined Lancaster University in 1989, where he founded the mid-infrared optoelectronics research group. He was promoted to Reader in 1999 and then to Professor of Physics in 2003. He is currently head of the condensed matter research division and has published more than 170 papers. In 1996 he founded the international mid-infrared materials & devices conference (MIOMD) and in 2006 he edited a specialist book on mid-infrared optoelectronics. His recent work concerns antimonide nanostructures and dilute nitride alloys for use in mid-infrared lasers and photodetectors.

Summary: InAsN dilute nitride alloys have great potential for the development of optoelectronic devices operating in the technologically important mid-infrared spectral range. In this work we report on the epitaxy of bulk and quantum well InAsNSb dilute nitride structures which exhibit light emission within the 2–5 μm wavelength region. The growth of InAsNSb is of particular interest because one can envisage novel type I strain balanced quantum wells on InAs substrates for use in diode lasers and LEDs. The samples were grown by molecular beam epitaxy (MBE) using a nitrogen flux of 6×10-6 mbar and a plasma power of 160 W. The structural and optical properties of the resulting material were studied using electron microscopy, high resolution X-ray diffraction and photoluminescence spectroscopy.
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