MIOMD-XI Speakers    
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1.  Dr. Ari Handono Ramelan, Univ. Sebelas Maret, INDONESIA
Late-Breaking Results: n-Type doping GaSb using DMTe by metalorganic chemical vapor deposition (MOCVD)
Speaker Biography: Dr. Ari Handono Ramelan received his M.Sc. (Honours) degree in Physics from Macquarie University, Australia in 1992 and Ph.D. degree also in Physics from Macquarie University in 2002. Dr. Ramelan is a senior lecturer at Sebelas Maret University (UNS) in Indonesia. His current research is focused on the design and fabrication of photodetectors, nano-materials for photovoltaics, and ferroelectrics materials for ultrasonic transducers and memory applications. Dr. Ramelan's group at Sebelas Maret University has an ongoing research and development program on GaSb and GaN quantum dots grown using a MOCVD reactor.

Summary: Antimony-based III-V semiconductors grown either lattice matched or slightly strained on GaSb substrates have received much attention both due to their potential applications as optical devices in the wavelength of 1-4 *m, and for their potential use in tunnelling structures, exploiting the heterojunction offset. Although investigations in laser diodes have been carried out by many groups, problems still remain with the growth of device-quality GaSb layers, most significantly with doping. Undoped GaSb usually exhibits p-type conductivity, owing to native lattice defect including Sb vacancies, antisite defects i.e., Ga atoms on Sb site, VGaGaSb. The group-VI elements such as S, Se, and Te are commonly used as n-type dopants in GaSb because the group-VI elements such as Si and Sn are amphoteric and lead to heavily compensated p-type layers. Researchers have investigated the n-type doping of GaSb by all major techniques. In the course of this work, it was identified that group-VI elements have high vapour pressure and segregation coefficient, making it difficult to control the electron concentration. Therefore, the growth of GaSb doped with Te is still a challenging and worth in-depth exploration. In this work, dimethyltelluride (DMTe) has been used as a dopant for the MOCVD growth of GaSb. The physical properties of MOCVD grown Te-doped GaSb on SI-GaAs substrates are reported. The effects of dopant flow rate on surface morphology, electrical and oprical properties have been determined.
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