MIOMD-XI Speakers    
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1.  Dr. Gregor Koblmüller, Walter Schottky Institut, GERMANY
Late-Breaking Results: Optical properties of (In,Ga)As Nanowire arrays on Silicon
Speaker Biography: From 2001-2004, G. Koblmüller was a Graduate Student Researcher at Infineon Technologies, Corporate Research, and received a Dr. Tech. in Technical Physics, Technical University Vienna in 2005. From 2005 and 2008, Dr. Koblmüller worked at UC Santa Barbara’s Materials Department as a Postdoctoral Research Associate and later as an Assistant Project Scientist. In 2009, Dr. Koblmüller joined the Walter Schottky Institute, Technical University Munich as Group Leader in III-V Materials, Staff Scientist and Lecturer. Dr. Koblmüller is the recipient of the Young Investigator MBE Award (Intl. MBE Conference, Berlin, 2010); Marie Curie International Reintegration Grant (2009); and IUPAP Young Author Best Paper Award (ICPS, Vienna, 2006).

Summary: Group-III arsenide nanowires (NW) exhibit significant potential to drive new applications in nano-electronic and -photonic devices especially when integrated on low-cost silicon (Si) platform. In particular, (In,Ga)As-based NWs and their heterostructures are of great interest due to their wide functionalities in NW field effect transistors, light absorbers and emitters covering a large infrared (IR) spectral region. Here, we report recent highlights on the growth and optical properties of site-selective, catalyst-free (In,Ga)As NW arrays on Si (111) substrate. Using a combination of nanoimprint lithography (NIL) for large-scale pre-patterned Si (111) templates and subsequent high-purity molecular beam epitaxy (MBE), spontaneous non-catalytic growth of (In,Ga)As NWs (free of foreign or self-catalysts) was realized with very high-yield (> 98%) periodic vertical NWs and pristine non-tapered morphological homogeneity. Remarkable NW size variation was achieved for the underlying selective area epitaxy (SAE) growth process by a variety of methods: e.g. (i) tuning of the interwire distance (i.e., via self-limited growth), (ii) modification of growth parameters, or (iii) variation of composition (i.e., In1-xGaxAs).
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