MIOMD-XI Speakers    
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1.  Mr. Yuan-yin Cao, Shanghai Institute of Microsystem and Information Technology, CHINA
Late-Breaking Results: InP-based InAs/InGaAs quantum well lasers at 2 μm
Speaker Biography: Cao Yuan-ying: was born in Jiangxi province, China, in 1986. He received the B.S. degree in physics from Shaanxi Normal University, Xian, China in 2009. He is currently working towards his Ph.D. degree in Micro-electronic & Solid Electronics at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS). His research interests are on the optoelectronic devices.

Summary: Mid-infrared lasers with emission wavelength around 2 µm are very useful for molecular spectroscopy and trace-gas sensing. Traditionally such semiconductor lasers are developed in InGaAsSb/AlGaAsSb material system on GaSb substrate. On the other side, InxGa1-xAs/In0.53Ga0.47As (x>0.53) quantum well (QW) structure on InP substrate is an alternative approach to demonstrate lasers in this spectral range. It is promising to achieve superior performances owing to the superior quality of InP substrate as well as the more mature growth and processing technology. In this work, we report the demonstration of InP based InAs/InGaAs quantum well lasers emitting at 2 µm, where a double QW structure composed of compressive InAs /In0.53Ga0.47As DA triangular well and tensile In0.43Ga0. 57As barrier is used as the active region. The spectral and optoelectronic features of the laser are characterized in detail.
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