MIOMD-XI Speakers    
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1.  Prof. Yi Gu, Shanghai Institute of Microsystem and Information Technology, CHINA
Late-Breaking Results: InAlAs metamorphic buffer with digital alloy intermediate layers for InP-based 2–3 μm devices
Speaker Biography: Gu Yi: received the B. S. degree in physics from Nanjing University, China, in 2004 and the Ph. D. degree in microelectronics and solid state electronics from Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, in 2009. He is currently an assistant professor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, working on design and MBE growth of semiconductor optoelectronic devices, including InGaAs PIN and APD photodectors, QCLs, InP-based MIR lasers and so on.

Summary: InP-based InGaAs photodetectors and lasers in near-infrared wavelength have been widely developed for fiber communication applications. By increasing the indium content in the InGaAs absorption layer of photodetectors or quantum well layer of lasers, the wavelength can be shifted to mid-infrared 2-3 μm range, which offers some advantages comparing with GaSb-based structures. However, a large lattice mismatch with respect to InP substrate is introduced. This problem can be partly overcome by constructing a virtual substrate on InP substrate, which is so-called "metamorphic buffer". The main challenges of metamorphic buffer are the rough interface and high density of threading dislocations (TDs), while various dislocation restriction techniques have been implemented to reduce the TD density of metamorphic buffer. In the past, digital alloy (DA) has been applied as an option for the growth of ternary or quaternary materials of various compositions by molecular beam epitaxy (MBE) without additional source cells or laborious growth interruption for cell temperature changes, and has been proved effective to decrease the strain energy and suppress the three-dimensional growth mode. In this work, we incorporate InAs/In0.52Al0.48As DA layers with InP-based InxAl1-xAs graded metamorphic buffer, and the TD suppression effects of DA intermediate layers are reported.
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