MIOMD-XI Speakers    
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1.  Prof. Mehdi Anwar, Univ. of Connecticut, USA
Invited Talk: ZnO-Based Oxide Semiconductors: A Material Platform for High Power Room Temperature THz QCLs
Speaker Biography: Dr. Mehdi Anwar currently serves as a Full Professor in the Electrical and Computer Engineering department. He is the Director of the NSF funded Industry University Cooperative Research Center. He has also served as the Associate Dean for Research & Graduate Education of the School of Engineering, University of Connecticut from June 2006 till May 2009. He served as the founding Director of the Department of Homeland Security Center of Excellence from June 2007 till May 2009. Moreover, he was the interim Director of the Connecticut Global Fuel Cell Center serving from June 2007 till January 2009. He served as the interim Department Head of ECE from June 1999 - August 2001.

Summary: The non-evasive and contactless THz imaging of obscure or hidden objects has found wide application in the security community along with the standard applications ranging from astrophysics to the inspection of integrated circuits. Most of the applications prefer high power THz sources operating at room temperature, however, the availability of such high power THz sources still remains a challenge. Using III-V material, distributed feedback Quantum Cascade Lasers (QCL) an output power of 2.4 watts have been reported. It is anticipated that the group III-nitrides may allow even higher output power at room temperature due to the rather large polar optical phonon energy, however, such experimental results are yet to be reported. ZnO/Zn1-xMgxO provides an alternative material system that may also allow high power room temperature generation of THz radiation.
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