MIOMD-XI Speakers    
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1.  Dr. Can Bayram, IBM Watson Labs, USA
Late-Breaking Results: AlGaN-based engineered intersubband devices
Speaker Biography: Can Bayram is working as a Research Scientist at IBM T. J. Watson Research Center, Yorktown Heights, USA. He received the Ph.D. degree in Solid State and Photonics from Northwestern University, USA. His current research interests are the development of high efficiency III-V solar cells, III-N light emitting diodes, and novel growth and fabrication technologies.He is the recipient of Boeing Engineer of the Year and Dow Sustainability Innovator Awards, IBM and Link Foundation Energy Fellowships, and top awards form IEEE, SPIE, and ICDD. He has (co-)authored 27 high-impact journal papers with 56 scientific contributions, and an active reviewer for journals&agencies.

Summary: III-Nitrides (AlXGaYIn(1-X-Y)N) are a unique group of semiconductors offering a direct bandgap over its entire composition range. The nitride based optoelectronic devices promise high reliability and efficiency as well as clean, robust, and a compact alternative to existing technologies such as those in use in our daily-life (lighting), military defense, or even space exploration. Historically, two key spectral regimes, ultraviolet and visible, have drawn most of the attention for a wide range of commercial applications in sanitation and solid state lighting. Recently, a better control over deposition, e.g., by metal-organic chemical vapor deposition (MOCVD) coupled with better understanding of the material system have enabled the engineering of III-nitride superlattices for applications in infrared to terahertz intersubband devices. MOCVD has been the backbone of the III-nitrides growth and an industry standard for epitaxial growth of compound semiconductors on a crystalline substrate. There has been a sustained improvement in wafer throughput by MOCVD making it cost-effective in mass-production. In this talk, design, growth, and measurement of MOCVD-grown AlXGaYIn(1-X-Y)N intersubband devices will be discussed.
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