Center for Quantum Devices - Most Downloaded Journal Articles

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22.	Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, H. Zhang, P. Kung, M. Razeghi, S.K. Lee and J.Y. Han Applied Physics Letters, 81 (12)-- September 16, 2002 ...[Visit Journal] Based on AlInGaN/AlInGaN multiquantum wells, we compare properties of ultraviolet light-emitting diodes (LED) with peak emission at 340 nm grown on free-standing hydride vapor phase epitaxially grown GaN substrate and on sapphire. For the LED grown on GaN substrate, a differential resistance as low as 13 Ω and an output power of more than one order of magnitude higher than that of the same structure grown on sapphire are achieved. Due to higher thermal conductivity of GaN, output power of the LEDs saturates at higher injection currents compared to the devices grown on sapphire. [reprint (PDF)]
22.	High quantum efficiency back-illuminated GaN avalanche photodiodes C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, M.P. Ulmer, and D. Silversmith Applied Physics Letters, Vol. 93, No. 21, p. 211107-1-- November 24, 2008 ...[Visit Journal] Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs. [reprint (PDF)]
22.	Semiconductor ultraviolet detectors M. Razeghi and A. Rogalski Journal of Applied Physics Applied Physics Review 79 (10)-- May 15, 1996 ...[Visit Journal] In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail. [reprint (PDF)]
22.	Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm Lakshay Gautam, Alexandre Guillaume Jaud, Junhee Lee, Gail J. Brown, Manijeh Razeghi Published in: IEEE Journal of Quantum Electronics ( Volume: 57, Issue: 2, April 2021) ...[Visit Journal] We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of ~14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas 25 μm×25 μm. Single photon detection efficiencies of ~5% were achieved. [reprint (PDF)]
22.	High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices A.M. Hoang, G. Chen, A. Haddadi and M. Razeghi SPIE Proceedings, Vol. 8631, p. 86311K-1, Photonics West, San Francisco, CA-- February 5, 2013 ...[Visit Journal] Active and passive imaging in a single camera based on the combination of short-wavelength and mid-wavelength infrared detection is highly needed in a number of tracking and reconnaissance missions. Due to its versatility in band-gap engineering, Type-II InAs/GaSb/AlSb superlattice has emerged as a candidate highly suitable for this multi-spectral detection. In this paper, we report the demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattice with designed cut-off wavelengths of 2 μm and 4 μm. Taking advantages of the high performance short-wavelength and mid-wavelength single color photodetectors, back-to-back p-i-n-n-i-p photodiode structures were grown on GaSb substrate by molecular beam epitaxy. At 150 K, the short-wave channel exhibited a quantum efficiency of 55%, a dark current density of 1.0x10^-9 A/cm² at -50 mV bias voltage, providing an associated shot noise detectivity of 3.0x10¹³ Jones. The mid-wavelength channel exhibited a quantum efficiency of 33% and a dark current density of 2.6x10^-5 A/cm² at 300 mV bias voltage, resulting in a detectivity of 4.0x10¹¹ Jones. The operations of the two absorber channels are selectable by changing the polarity of applied bias voltage. [reprint (PDF)]
22.	Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range E. Michel, J.D. Kim, S. Park, J. Xu, I. Ferguson, and M. Razeghi SPIE Photonics West '96 'Photodetectors: Materials and Devices'; Proceedings 2685-- January 27, 1996 ...[Visit Journal] In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs_1-xSb_x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10^-2 V/W at 8 micrometers . The R₀A product of InAsSb detectors has been theoretically and experimentally analyzed. [reprint (PDF)]
22.	Al_xGa_1-xN (0 ≤ x ≤ 1) Ultraviolet Photodetectors Grown on Sapphire by Metal-organic Chemical-vapor Deposition D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi Applied Physics Letters 70 (8)-- February 24, 1997 ...[Visit Journal] Al_xGa_1–xN (0 ≤ x ≤ 1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5 × 10⁸ cm·Hz^1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in Al_xGa_1–xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples. [reprint (PDF)]
22.	Room temperature terahertz semiconductor frequency comb Quanyong Lu, Feihu Wang, Donghai Wu, Steven Slivken & Manijeh Razeghi Nature Communications 10, 2403-- June 3, 2019 ...[Visit Journal] A terahertz (THz) frequency comb capable of high-resolution measurement will significantly advance THz technology application in spectroscopy, metrology and sensing. The recently developed cryogenic-cooled THz quantum cascade laser (QCL) comb has exhibited great potentials with high power and broadband spectrum. Here, we report a room temperature THz harmonic frequency comb in 2.2 to 3.3 THz based on difference-frequency generation from a mid-IR QCL. The THz comb is intracavity generated via down-converting a mid-IR comb with an integrated mid-IR single mode based on distributed-feedback grating without using external optical elements. The grating Bragg wavelength is largely detuned from the gain peak to suppress the grating dispersion and support the comb operation in the high gain spectral range. Multiheterodyne spectroscopy with multiple equally spaced lines by beating it with a reference Fabry-Pérot comb confirms the THz comb operation. This type of THz comb will find applications to room temperature chip-based THz spectroscopy. [reprint (PDF)]
22.	Recent advances in high power mid- and far-wavelength infrared lasers for free space communication S. Slivken and M. Razeghi SPIE Optics East Conference, October 1-4, 2006, Boston, MA Proceedings – Active and Passive Optical Components for Communications VI, Vol. 6389, p. 63890S-1-- October 4, 2006 ...[Visit Journal] Link reliability is a significant issue for free space optical links. Inclement weather, such as fog, can seriously reduce the transmission of light through the atmosphere. However, this effect, for some types of fog, is wavelength-dependent. In order to improve link availability in both metro and hostile environments, mid- and far-wavelength infrared diode lasers can be of use. This paper will discuss some of the recent advances in high-power, uncooled quantum cascade lasers and their potential for use in long range and/or highly reliable free space communication links. [reprint (PDF)]
22.	Background Limited Performance in p-doped GaAs/Ga[0.71]In[0.29]As[0.39]P[0.61] Quantum Well Infrared Photodetectors J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi and G. Brown Applied Physics Letters 67 (1)-- July 3, 1995 ...[Visit Journal] Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga_0.71In_0.29As_0.39P_0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. [reprint (PDF)]
22.	1-5 jim ROOM-TEMPERATURE PULSED OPERATION OF GalnAsP/lnP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD Manijeh Razeghi, P. Hirtz, J.P. Larivain, R. Blondeau, B. de Crémoux, J.P. Duchemin, ELECTRONICS LETTERS, vol. 17, no.18-- September 3, 1981 ...[Visit Journal] The letter reports the first successful room-temperature pulsed operation of a broad-area contact laser of GaInAsP/InP double heterostructure, grown by LP MOCVD, emitting at 1.5 μm. Pulsed thresholds as low as 2.5 kA/cm2 have been obtained for 1.5 μm, for an active layer thickness of 0.48 μm. This is equal to a current density per micrometre of 5.2 kA cm−2 μm−1. InxGa1−xAsyP1−y, III, III, V, V alloys are of great interest for use in infra-red devices. They can be grown lattice matched on InP over a wide range of compositions. The resulting bandgap (1.35–0.75 eV) covers a spectral range which contains the region of lowest losses and lowest dispersion in modern optical fibres. This property makes In1−xGaxASyP1−y, very attractive as a semiconductor laser and detector material for future fibre communication systems. [reprint (PDF)]
22.	4.5 mW Operation of AlGaN-based 267 nm Deep-Ultraviolet Light-Emitting Diodes A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S.R. Darvish, P. Kung and M. Razeghi Applied Physics Letters, 83 (23)-- December 8, 2003 ...[Visit Journal] We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 µW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management. [reprint (PDF)]
22.	Dark current suppression in Type-II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier B.M. Nguyen, D. Hoffman, P.Y. Delaunay, and M. Razeghi Applied Physics Letters, Vol. 91, No. 16, p. 163511-1-- October 15, 2007 ...[Visit Journal] We presented an alternative design of Type-II superlattice photodiodes with the insertion of a mid-wavelength infrared M-structure AlSb/GaSb/InAs/GaSb/AlSb superlattice for the reduction of dark current. The M-structure superlattice has a larger carrier effective mass and a greater band discontinuity as compared to the standard Type-II superlattices at the valence band. It acts as an effective medium that weakens the diffusion and tunneling transport at the depletion region. As a result, a 10.5 µm cutoff Type-II superlattice with 500 nm M-superlattice barrier exhibited a R₀A of 200 cm² at 77 K, approximately one order of magnitude higher than the design without the barrier. The quantum efficiency of such structures does not show dependence on either barrier thickness or applied bias. [reprint (PDF)]
22.	Status of III-V semiconductor thin films and their applications to future OEICs Manijeh Razeghi Proc. SPIE 10267, Integrated Optics and Optoelectronics, 102670T -- June 26, 2017 ...[Visit Journal] In the last decade, semiconductor technology has been advanced to a great extent in terms of electronic and photonic discrete devices. One of the main reasons for such a progress, is the result of advancement in the epitaxial growth techniques such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), where device quality films can be grown with great control over composition, uniformity and thickness. MOCVD has proven to be one of the best growth methods for many IH-V semiconductor thin films 1. Its flexibility and potential to yield a broad range of growth rates resulted in the layers featuring the thicknesses from tens of microns down to several nanometers. Planar structures containing quantum wells with atomically flat interfaces, superlattices, strained or graded-index layers were successfully grown by MOCVD. Furthermore, MOCVD proved its efficiency in producing a laser devices by overgrowth and epitaxy on patterned substrates. The importance of MOCVD is strongly enhanced by the possibility of large-scale production by simultaneous growth on several substrates in one process. Several III-V semiconductor films with bandgaps ranging from infrared to ultraviolet (15 to 0.2 μm) have been successfully grown by MOCVD. [reprint (PDF)]
22.	Effect of sidewall surface recombination on the quantum efficiency in a Y₂O₃ passivated gated type-II InAs/GaSb long-infrared photodetector array G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi Appl. Phys. Lett. 103, 223501 (2013)-- November 25, 2013 ...[Visit Journal] Y₂O₃ was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO₂ passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at −300 mV of 2.5 × 10⁻⁵ A/cm² and 1.3 × 10⁴ Ω·cm², respectively, and a specific detectivity of 1.4 × 10¹² Jones. [reprint (PDF)]
22.	High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD W. Zhang, H. Lim, M. Taguchi, S. Tsao, J. Szafraniec, B. Movaghar, M. Razeghi, and M. Tidrow SPIE Conference, Jose, CA, Vol. 5732, pp. 326-- January 22, 2005 ...[Visit Journal] Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared detection. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs including higher operation temperature and normal incidence detection. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). The device structures consist of multiple stacks of InAs quantum dots with InP barriers. High detectivities in the range of 10¹⁰cm·Hz^1/2/W were obtained at 77K. The measurements at higher temperatures show better temperature dependent performance than QWIP. However, the performances of QDIPs are still far from the expected. One of the reasons is the low quantum efficiency due to the low fill factor of quantum dots layer. Resonant cavity enhanced QDIP has been studied to increase the quantum efficiency. Different schemes of mirrors using free carrier plasma and distributed Bragg reflector are discussed. [reprint (PDF)]
22.	InGaAs/InGaP Quantum-Dot Photodetector with a High Detectivity H. Lim, S. Tsao, M. Taguchi, W. Zhang, A. Quivy and M. Razeghi SPIE Conference, San Jose, CA, Vol. 6127, pp. 61270N-- January 23, 2006 ...[Visit Journal] Quantum-dot infrared photodetectors (QDIPs) have recently been considered as strong candidates for numerous applications such as night vision, space communication, gas analysis and medical diagnosis involving middle and long wavelength infrared (MWIR and LWIR respectively) operation. This is due to their unique properties arising from their 3-dimensional confinement potential that provides a discrete density of states. They are expected to outperform quantum-well infrared photodetectors (QWIPs) as a consequence of their natural sensitivity to normal incident radiation, their higher responsivity and their higher-temperature operation. So far, most of the QDIPs reported in the literature were based on the InAs/GaAs system and were grown by molecular beam epitaxy (MBE). Here, we report on the growth of a high detectivity InGaAs/InGaP QDIP grown on a GaAs substrate using low-pressure metalorganic chemical vapor deposition (MOCVD). [reprint (PDF)]
22.	High Carrier Lifetime InSb Grown on GaAs Substrates E. Michel, H. Mohseni, J.D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, and M. Ahoujja Applied Physics Letters 71 (8-- August 25, 1997 ...[Visit Journal] We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 µm epilayer, peak mobilities as high as ~ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K. [reprint (PDF)]
22.	Recent advances in IR semiconductor laser diodes and future trends M. Razeghi; Y. Bai; N. Bandyopadhyay; B. Gokden; Q.Y. Lu; S. Slivken Photonics Society Summer Topical Meeting Series, IEEE [6000041], pp. 55-56 (2011)-- July 18, 2011 ...[Visit Journal] The wall plug efficiency of the mid-infrared quantum cascade laser in room temperature continuous wave (cw) operation is brought to 21%, with a maximum output power of 5.1 W. Using a surface grating distributed feedback (DFB) approach, we demonstrated 2.4 W single mode output in room temperature cw operation. With a photonic crystal distributed feedback (PCDFB) design, we achieved single mode spectrum and close to diffraction limited far field with a room temperature high peak power of 34 W. [reprint (PDF)]
22.	Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi, Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature, Surface Science, Volume 142, Issues 1–3, 1984, Pages 179-181,-- July 1, 1984 ...[Visit Journal] We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1−xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ϱxx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels. [reprint (PDF)]
22.	Thermal stability of GaN thin films grown on (0001) Al₂O₃, (0112) Al₂O₃ and (0001)Si 6H-SiC substrates C.J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D.K. Gaskill Journal of Applied Physics 76 (1)-- July 1, 1994 ...[Visit Journal] Single crystals of GaN were grown on (0001), (0112) Al₂O₃ and (0001)Si 6H‐SiC substrates using an atmospheric pressure metalorganic chemical‐vapor‐deposition reactor. The relationship has been studied between the thermal stability of the GaN films and the substrate’s surface polarity. It appeared that the N‐terminated (0001) GaN surface grown on (0001)Si 6H‐SiC has the most stable surface, followed by the nonpolar (1120) GaN surface grown on (0112) Al₂O₃, while the Ga‐terminated (0001) GaN surface grown on (0001) Al₂O₃ has the least stable surface. This is explained with the difference in the atomic configuration of each of these surfaces which induces a difference in their thermal decomposition. [reprint (PDF)]
22.	Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices S. Abdollahi Pour, B. Movaghar, and M. Razeghi American Physical Review, Vol. 83, No. 11, p. 115331-1-- March 15, 2011 ...[Visit Journal] A method to handle the variation of the band gap with temperature in direct band-gap III–V semiconductors and superlattices using an empirical tight-binding method has been developed. The approach follows closely established procedures and allows parameter variations which give rise to perfect fits to the experimental data. We also apply the tight-binding method to the far more complex problem of band structures in Type-II infrared superlattices for which we have access to original experimental data recently acquired by our group. Given the close packing of bands in small band-gap Type-II designs, k·p methods become difficult to handle, and it turns out that the sp3s* tight-binding scheme is a practical and powerful asset. Other approaches to band-gap shrinkage explored in the past are discussed, scrutinized, and compared. This includes the lattice expansion term, the phonon softening mechanism, and the electron-phonon polaronic shifts calculated in perturbation theory. [reprint (PDF)]
22.	Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, P. Manurkar, S. Bogdanov and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0W-- January 26, 2009 ...[Visit Journal] Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an Mstructure barrier between the n-type contact and the pi active region reduced the tunneling component of the dark current. The M-structure design improved the noise performance and the dynamic range of FPAs at low temperatures. At 81K, the NEDT of the focal plane array was 23 mK. The noise of the camera was dominated by the noise component due to the read out integrated circuit. At 8 µm, the median quantum efficiency of the detectors was 71%, mainly limited by the reflections on the backside of the array. [reprint (PDF)]
22.	Monolithic, steerable, mid-infrared laser realized with no moving parts Slivken S, Wu D, Razeghi M Scientific Reports 7, 8472 -- May 24, 2018 ...[Visit Journal] The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function. [reprint (PDF)]
22.	Room temperature operation of In_xGa_1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD D. H. Wu, Y. Y. Zhang, and M. Razeghi Applied Physics Letters 112, 111103-- March 14, 2018 ...[Visit Journal] We demonstrate room temperature operation of In_0.5Ga_0.5Sb/InAs type-II quantum well photodetectors on InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm², peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with calculated specific detectivity of 2.4×10⁹ cm.Hz^1/2/W at 3.81 μm. [reprint (PDF)]

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