Center for Quantum Devices - Most Downloaded Journal Articles

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4.	Room-temperature continuous-wave operation of quantum-cascade lasers at λ ~ 4 µm J.S. Yu, S.R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi Applied Physics Letters 88 (4)-- January 23, 2006 ...[Visit Journal] High-power cw λ~4 μm quantum-cascade lasers (QCLs) are demonstrated. The effect of different cavity length and laser die bonding is also investigated. For a high-reflectivity-coated 11-μm-wide and 4-mm-long epilayer-down bonded QCL, cw output powers as high as 1.6 W at 80 K and 160 mW at 298 K are obtained, and the cw operation is achieved up to 313 K with 12 mW. [reprint (PDF)]
4.	Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors Romain Chevallier, Abbas Haddadi, & Manijeh Razeghi Scientific Reports 7, Article number: 12617-- October 3, 2017 ...[Visit Journal] Microjunction InAs/InAsSb type-II superlattice-based long-wavelength infrared photodetectors with reduced dark current density were demonstrated. A double electron barrier design was employed to reduce both bulk and surface dark currents. The photodetectors exhibited low surface leakage after passivation with SiO2, allowing the use of very small size features without degradation of the dark current. Fabricating microjunction photodetectors (25 × 25 µm² diodes with 10 × 10 µm² microjunctions) in combination with the double electron barrier design results in a dark current density of 6.3 × 10⁻⁶ A/cm² at 77 K. The device has an 8 µm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 µm-thick absorption region, which results in a specific detectivity value of 1.2 × 10¹² cm·Hz^½/W. [reprint (PDF)]
4.	Fabrication and characterization of novel hybrid green light emitting didoes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi Journal of Vacuum Science and Technology B, Vol. 27, No. 3, May/June, p. 1784-1788-- May 29, 2009 ...[Visit Journal] Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized. [reprint (PDF)]
4.	Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application Guanxi Chen, Abbas Haddadi, Anh-Minh Hoang, Romain Chevallier, and Manijeh Razeghi Optics Letters Vol. 40, Iss. 1, pp. 29–32-- December 18, 2014 ...[Visit Journal] An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320×256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and −50 mV operation bias, the 27 μm pixels exhibited dark current density to be 1.2×10⁻⁵ A/cm², with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of 1.2×10¹² Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below 1×10⁻⁹ A/cm², and specific detectivity of 1.5×10¹⁴ Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time. [reprint (PDF)]
4.	Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice F. Callewaert, A.M. Hoang, and M. Razeghi Applied Physics Letters, 104, 053508 (2014)-- February 6, 2014 ...[Visit Journal] A long wavelength infrared minority electron unipolar photodetector based on InAs/GaSb type-II superlattices is demonstrated. At 77 K, a dark current of 3 × 10⁻⁵ A/cm² and a differential resistance-area of 3 700 Ω·cm² are achieved at the turn-on bias, with a 50%-cutoff of 10.0 μm and a specific detectivity of 6.2 × 10¹¹ Jones. The dark current is fitted as a function of bias and temperature using a model combining generation-recombination and trap-assisted tunneling. Good agreement was observed between the theory and the experimental dark current. [reprint (PDF)]
4.	Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire S. Gautier, T. Moudakir, G. Patriarche, D.J. Rogers, V.E. Sandana, F. Hosseini Teherani, P. Bove, Y. El Gmili, K. Pantzas, Suresh Sundaram, D. Troadec, P.L. Voss, M. Razeghi, A. Ougazzaden Journal of Crystal Growth, Volume 370, Pages 63-67 (2013)-- May 1, 2013 ...[Visit Journal] GaN thin films were grown on ZnO/c-Al₂O₃ with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N₂ as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth. [reprint (PDF)]
4.	*A Crystallographic Model of (001) Aluminum Nitride Epitaxial Thin Film Growth on (001) Sapphire Substrate* C.J. Sun, P. Kung, A. Saxler, H. Ohsato, M. Razeghi, and K. Haritos Journal of Applied Physics 75 (8)-- April 15, 1994 ...[Visit Journal] A direct comparison of the physical properties of GaN thin films is made as a function of the choice of substrate orientations. Gallium nitride single crystals were grown on (0001) and (011-bar 2) sapphire substrates by metalorganic chemical vapor deposition. Better crystallinity with fine ridgelike facets is obtained on the (011-bar 2) sapphire. Also lower carrier concentration and higher mobilities indicate both lower nitrogen vacancies and less oxygen incorporation on the (011-bar 2) sapphire. The results of this study show better physical properties of GaN thin films achieved on (011-bar 2) sapphire. [reprint (PDF)]
3.	Extended electrical tuning of quantum cascade lasers with digital concatenated gratings S. Slivken, N. Bandyopadhyay, Y. Bai, Q. Y. Lu, and M. Razeghi Appl. Phys. Lett. 103, 231110 (2013)-- December 6, 2013 ...[Visit Journal] In this report, the sampled grating distributed feedback laser architecture is modified with digital concatenated gratings to partially compensate for the wavelength dependence of optical gain in a standard high efficiency quantum cascade laser core. This allows equalization of laser threshold over a wide wavelength range and demonstration of wide electrical tuning. With only two control currents, a full tuning range of 500 nm (236 cm⁻¹) has been demonstrated. Emission is single mode, with a side mode suppression of >20 dB. [reprint (PDF)]
3.	High power photonic crystal distributed feedback quantum cascade lasers emitting at 4.5 micron B. Gokden, S. Slivken and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 760806-1-- January 22, 2010 ...[Visit Journal] Quantum cascade lasers possess very small linewidth enhancement factor, which makes them very prominent candidates for realization of high power, nearly diffraction limited and single mode photonic crystal distributed feedback broad area lasers in the mid-infrared frequencies. In this paper, we present room temperature operation of a two dimensional photonic crystal distributed feedback quantum cascade laser emitting at 4.5 µm. peak power up to ~0.9 W per facet is obtained from a 2 mm long laser with 100 µm cavity width at room temperature. The observed spectrum is single mode with a very narrow linewidth. Far-field profile has nearly diffraction limited single lobe with full width at half maximum of 3.5 degree normal to the facet. The mode selection and power output relationships are experimentally established with respect to different cavity lengths for photonic crystal distributed feedback quantum cascade lasers. [reprint (PDF)]
3.	Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays E.K. Huang, B.M. Nguyen, D. Hoffman, P.Y. Delaunay and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0Z-- January 26, 2009 ...[Visit Journal] A challenge for Type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl₃/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si₃N₄ hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are essential toward the realization of high fill factor FPAs. ICP-etched single element devices with SiO₂ passivation that are 9.3 µm in cutoff wavelength achieved vertical sidewalls of 7.7 µm in depth with a resistance area product at zero bias of greater than 1,000 Ω·cm² and maximum differential resistance in excess of 10,000 Ω·cm² at 77 K. By only modifying the etching technique in the fabrication steps, the ICP-etched photodiodes showed an order of magnitude decrease in their dark current densities in comparison to the ECR-etched devices. Finally, high aspect ratio etching is demonstrated on mutli-element arrays with 3 µm-wide trenches that are 11 µm deep. [reprint (PDF)]
3.	Aluminum free GaInP/GaAs Quantum Well Infrared Photodetectors for Long Wavelength Detection C. Jelen, S. Slivken, J. Hoff, M. Razeghi, and G. Brown Applied Physics Letters 70 (3)-- January 20, 1997 ...[Visit Journal] We demonstrate quantum well infrared photodetectors based on a GaAs/Ga_0.51In_0.49P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples. [reprint (PDF)]
3.	High Power Mid-Infrared Quantum Cascade Lasers Grown on Si Steven Slivken, Nirajman Shrestha, and Manijeh Razeghi Photonics, vol. 9, 626 ...[Visit Journal] This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 um, and the device operates in the fundamental transverse mode. [reprint (PDF)]
3.	Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication M. Razeghi special issue of Microelectronics Journal 30 (10)-- October 1, 1999[reprint (PDF)]
3.	High operability 1024 x 1024 long wavelength Type-II superlattice focal plane array A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi IEEE Journal of Quantum Electronics (JQE), Vol. 48, No. 2, p. 221-228-- February 10, 2012 ...[Visit Journal] Electrical and radiometric characterization results of a high-operability 1024 x 1024 long wavelength infrared type-II superlattice focal plane array are described. It demonstrates excellent quantum efficiency operability of 95.8% and 97.4% at operating temperatures of 81 K and 68 K, respectively. The external quantum efficiency is 81% without any antireflective coating. The dynamic range is 37 dB at 81 K and increases to 39 dB at 68 K operating temperature. The focal plane array has noise equivalent temperature difference as low as 27 mK and 19 mK at operating temperatures of 81 K and 68 K, respectively, using f/2 optics and an integration time of 0.13 ms. [reprint (PDF)]
3.	Type-II Antimonide-based Superlattices for the Third Generation Infrared Focal Plane Arrays Manijeh Razeghi, Edward Kwei-wei Huang, Binh-Minh Nguyen, Siamak Abdollahi Pour, and Pierre-Yves Delaunay SPIE Proceedings, Infrared Technology and Applications XXXVI, Vol. 7660, pp. 76601F-- May 10, 2010 ...[Visit Journal] In recent years, the Type-II superlattice (T2SL) material platform has seen incredible growth in the understanding of its material properties which has lead to unprecedented development in the arena of device design. Its versatility in band-structure engineering is perhaps one of the greatest hallmarks of the T2SL that other material platforms are lacking. In this paper, we discuss advantages of the T2SL, specifically the M-structure T2SL, which incorporates AlSb in the traditional InAs/GaSb superlattice. Using the M-structure, we present a new unipolar minority electron detector coined as the p-M-p, the letters which describe the composition of the device. Demonstration of this device structure with a 14 μm cutoff attained a detectivity of 4x10¹⁰ Jones (-50 mV) at 77 K. As device performance improves year after year with novel design contributions from the many researchers in this field, the natural progression in further enabling the ubiquitous use of this technology is to reduce cost and support the fabrication of large infrared imagers. In this paper, we also discuss the use of GaAs substrates as an enabling technology for third generation imaging on T2SLs. Despite the 7.8% lattice mismatch between the native GaSb and alternative GaAs substrates, T2SL photodiodes grown on GaAs at the MWIR and LWIR have been demonstrated at an operating temperature of 77 K [reprint (PDF)]
3.	Crack-free AlGaN for solar-blind focal plane arrays through reduced area expitaxy E. Cicek, R. McClintock, Z. Vashaei, Y. Zhang, S. Gautier, C.Y. Cho and M. Razeghi Applied Physics Letters, Vol. 102, No. 05, p. 051102-1-- February 4, 2013 ...[Visit Journal] We report on crack reduction for solar-blind ultraviolet detectors via the use of a reduced area epitaxy (RAE) method to regrow on patterned AlN templates. With the RAE method, a pre-deposited AlN template is patterned into isolated mesas in order to reduce the formation of cracks in the subsequently grown high Al-content Al_xGa_1−xN structure. By restricting the lateral dimensions of the epitaxial growth area, the biaxial strain is relaxed by the edges of the patterned squares, which resulted in ∼97% of the pixels being crack-free. After successful implementation of RAE method, we studied the optical characteristics, the external quantum efficiency, and responsivity of average pixel-sized detectors of the patterned sample increased from 38% and 86.2 mA/W to 57% and 129.4 mA/W, respectively, as the reverse bias is increased from 0 V to 5 V. Finally, we discussed the possibility of extending this approach for focal plane array, where crack-free large area material is necessary for high quality imaging. [reprint (PDF)]
3.	Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs-GaSb superlattices P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, and M. Razeghi IEEE Journal of Quantum Electronics, Vol. 45, No. 2, p. 157-162.-- February 1, 2009 ...[Visit Journal] The recent introduction of a M-structure design improved both the dark current and R₀A performances of Type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels was measured between 1.1 and 1.6 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without antireflective coating was 74%. The noise equivalent temperature difference reached 23 mK, limited only by the performance of the testing system and the read out integrated circuit. Background limited performances were demonstrated at 81 K for a 300 K background. [reprint (PDF)]
3.	High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices M. Razeghi; A. Haddadi; A.M. Hoang; G. Chen; S. Ramezani-Darvish; P. Bijjam Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040S (June 11, 2013)-- June 11, 2013 ...[Visit Journal] We report a bias selectable dual-band mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 μm active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR band. Under back-side illumination, a temperature evolution study of the MWIR detector's electro-optical performance found the 300 K background-limit with 2π field-of-view to be achieved below operating temperatures of 160 K, at which the temperature's 50% cutoff wavelength was 5.2 μm. The measured current reached the system limit of 0.1 pA at 110 K for 30 μm pixel-sized diodes. At 77 K, where the LWIR channel operated with a 50% cutoff wavelength at 11.2 μm, an LWIR selectivity of ∼17% was achieved in the MWIR wave band between 3 and 4.7 μm, making the detector highly selective. [reprint (PDF)]
3.	High power broad area quantum cascade lasers Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi Applied Physics Letters, Vol. 95, No. 22, p. 221104-1-- November 30, 2009 ...[Visit Journal] Broad area quantum cascade lasers (QCLs) are studied with ridge widths up to 400 µm, in room temperature pulsed mode operation at an emission wavelength around 4.45 µm. The peak output power scales linearly with the ridge width. A maximum total peak output power of 120 W is obtained from a single 400-µm-wide device with a cavity length of 3 mm. A stable far field emission characteristic is observed with dual lobes at ±38° for all tested devices, which suggests that these broad area QCLs are highly resistant to filamentation. [reprint (PDF)]
3.	Type-II superlattice-based heterojunction phototransistors for high speed applications Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi Infrared Physics and Technology 108, 1033502-- May 2, 2020 ...[Visit Journal] In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between -3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a -3 dB cut-off frequency of 2.8 GHz. [reprint (PDF)]
3.	Modeling the electronic band-structure of strained long-wavelength Type-II superlattices using the scattering matrix method Abbas Haddadi，Gail Brown，Manijeh Razeghi Abbas Haddadi,Brown Gail and Razeghi Manijeh.Modeling the electronic band-structure of strained long-wavelength Type-II superlattices using the scattering matrix method[J].Journal of Infrared and Millimeter Waves,2025,44(3):345~350 ...[Visit Journal] This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-II superlattices. Utilizing an eight-band k ⋅ p Hamilto⁃ nian in conjunction with a scattering matrix method， the model effectively incorporates quantum confinement， strain effects， and interface states. This robust and numerically stable approach achieves exceptional agreement with experimental data， offering a reliable tool for analyzing and engineering the band structure of complex multi⁃ layer systems
3.	Demonstration of long wavelength infrared Type-II InAs/InAs_1-xSb_x superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition D. H. Wu, A. Dehzangi, Y. Y. Zhang, M. Razeghi Applied Physics Letters 112, 241103-- June 12, 2018 ...[Visit Journal] We report the growth and characterization of long wavelength infrared type-II InAs/InAs_1−xSb_x superlattices photodiodes with a 50% cut-off wavelength at 8.0 μm on GaSb substrate grown by metalorganic chemical vapor deposition. At 77 K, the photodiodes exhibited a differential resistance at zero bias (R₀A) 8.0 Ω·cm², peak responsivity of 1.26 A/W corresponding to a quantum efficiency of 21%. A specific detectivity of 5.4×10¹⁰ cm·Hz^1/2/W was achieved at 7.5 μm. [reprint (PDF)]
3.	Novel Green Light Emitting Diodes: Exploring Droop-Free Lighting Solutions for a Sustainable Earth M. Razeghi, C. Bayram, R. McClintock, F. Hosseini Teherani, D.J. Rogers, and V.E. Sandana Journal of Light Emitting Diodes, Vol. 2, No. 1, p. 1-33-- April 30, 2010 ...[Visit Journal] The total annual energy consumption in the United States for lighting is approximately 800 Terawatt-hours and costs $80 billion to the public. The energy consumed for lighting throughout the world entails to greenhouse gas emission equivalent to 70% of the emissions from all the cars in the world. Novel solutions to lighting with higher efficiency will drastically reduce the energy consumption and help greenhouse gas emissions to be lowered. Novel green light emitting diodes are the key components of an affordable, durable and environmentally benign lighting solution that can achieve unique spectral quality and promise superior energy conversion efficiency. Light-emitting diodes (LEDs), based on the InGaN alloy, are currently the most promising candidates for realizing solid state lighting (SSL). InGaN is a direct wide bandgap semiconductor with an emission that can span the entire visible spectrum via compositional tuning. However, InGaN LED performance remains wavelength-dependent. Indeed, ultrabright and efficient blue InGaN-based LEDs are readily available but the performance of InGaN-based green LEDs is still far from adequate for use in SSL. Our recent work demonstrated hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers.. We have shown that atop grown ZnO layer by Pulsed Laser Deposition can be a good replacement for GaN. The green wavelength emission requires significant indium content in the active layer (growth temperature ~ 700ºC) that makes InGaN quantum wells very susceptible to thermal degradation. With our technology, diffusion and segregation of indium in the green emitting active is inhibited thanks to the lower ZnO deposition temperatures (<600ºC) than is required for GaN (>1000ºC). Our novel technology preserves the integrity of the as-grown active layer and demonstrates superior green spectral quality (as demonstrated for LEDs on c-sapphire). The results indicate that hybrid LED structures could hold prospects for the development of green LEDs with superior performance.
3.	State-of-the-art Type II Antimonide-based superlattice photodiodes for infrared detection and imaging M. Razeghi, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, S. Abdollahi Pour, P. Manurkar, and S. Bogdanov SPIE Proceedings, Nanophotonics and Macrophotonics for Space Environments II, San Diego, CA, Vol. 7467, p. 74670T-1-- August 5, 2009 ...[Visit Journal] Type-II InAs/GaSb Superlattice (SL), a system of multi interacting quantum wells was first introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this low dimensional system has drawn a lot of attention for its attractive quantum mechanics properties and its grand potential for the emergence into the application world, especially in infrared detection. In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs and imaging applications which elevated the performances of Type-II InAs/GaSb superlattice photodetectors to a comparable level to the state-of-the-art Mercury Cadmium Telluride. We will present in this talk the current status of the state-of-the-art Type II superlattice photodetectors and focal plane arrays, and the future outlook for this material system. [reprint (PDF)]
3.	Determination of of Band Gap Energy of Al_1-xIn_xN Grown by Metal Organic Chemical Vapor Deposition in the High Al Composition Regime K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim Applied Physics Letters 71 (6)-- August 11, 1997 ...[Visit Journal] Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al_0.92In_0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. [reprint (PDF)]

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