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1.  Optimizing facet coating of quantum cascade lasers for low power consumption
Y. Bai, S.R. Darvish, N. Bandyopadhyay, S. Slivken and M. Razeghi
Journal of Applied Physics, Vol. 109, No. 5, p. 053103-1-- March 1, 2011 ...[Visit Journal]
Typical high power consumption (∼10 W) of mid-infrared quantum cascade lasers (QCLs) has been a serious limitation for applications in battery powered systems. A partial high-reflection (PHR) coating technique is introduced for power downscaling with shorter cavity lengths. The PHR coating consists of a double layer dielectric of SiO2 and Ge. With this technique, a 4.6 μm QCL with an ultra low threshold power consumption of less than a watt (0.83 W) is demonstrated in room temperature continuous wave operation. At 25°C, the maximum output power and wall plug efficiency are 192 mW and 8.6%, respectively. [reprint (PDF)]
 
1.  Reliability of strain-balanced Ga0.331In0.669As/Al0.659In0.341As/InP quantum-cascade lasers under continuous-wave room-temperature operation
A. Evans and M. Razeghi
Applied Physics Letters, 88 (26)-- June 26, 2006 ...[Visit Journal]
Constant current aging is reported for two randomly selected high-reflectivity-coated QCLs with an output power over 100 mW. QCLs are tested under continuous-wave operation at a heat sink temperature of 298 K(25 °C) corresponding to an internal temperature of 378 K (105 °C). Over 4000 h of continuous testing is reported without any decrease in output power. [reprint (PDF)]
 
1.  Modeling Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: New Aspects
Y. Wei, M. Razeghi, G.J. Brown, and M.Z. Tidrow
SPIE Conference, Jose, CA, Vol. 5359, pp. 301-- January 25, 2004 ...[Visit Journal]
The recent advances in the experimental work on the Type-II InAs/GaSb superlattices necessitate a modeling that can handle arbitrary layer thickness as well as different types of interfaces in order to guide the superlattice design. The empirical tight-binding method (ETBM) is a very good candidate since it builds up the Hamiltonian atom by atom. There has been a lot of research work on the modeling of Type-II InAs/GaSb superlattices using the ETBM. However, different groups generate very different accuracy comparing with experimental results. We have recently identified two major aspects in the modeling: the antimony segregation and the interface effects. These two aspects turned out to be of crucial importance governing the superlattice properties, especially the bandgap. We build the superlattice Hamiltonian using antimony segregated atomic profile taking into account the interface. Our calculations agree with our experimental results within growth uncertainties. In addition we introduced the concept of GaxIn1-x type interface engineering, which will add another design freedom especially in the mid-wavelength infrared range (3~7 µm) in orderto reduce the lattice mismatch. [reprint (PDF)]
 
1.  Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
Arash Dehzangi , Ryan McClintock, Donghai Wu , Abbas Haddadi, Romain Chevallier , and Manijeh Razeghi
Applied Physics Letters 114, 191109-- May 17, 2019 ...[Visit Journal]
A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of 2.3 λ at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 X 103 A/cm² and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 X 1011 cm·Hz½/W at 300 K which remains constant over a broad range of wavelengths and applied biases. [reprint (PDF)]
 
1.  High performance LWIR Type-II InAs/GaSb superlattice photodetectors and infrared focal plane array
Y. Wei, A. Hood, A. Gin, V. Yazdanpanah, M. Razeghi and M. Tidrow
SPIE Conference, Jose, CA, Vol. 5732, pp. 309-- January 22, 2005 ...[Visit Journal]
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 μm. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω·cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms. [reprint (PDF)]
 
1.  High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN
Erdem Cicek, Ryan McClintock, Abbas Haddadi, William A. Gaviria Rojas, and Manijeh Razeghi
IEEE Journal of Quantum Electronics, Vol. 50, Issue 8, p 591-595-- August 1, 2014 ...[Visit Journal]
We report on solar-blind ultraviolet, AlxGa1-x N- based,p-i-n,focal plane array (FPA) with 92% operability. At the peak detection wavelength of 278 nm, 320×256-FP A-pixel showed unbiased peak external quantum efficiency (EQE) and responsivity of 49% and 109 mA/W, respectively, increasing to 66% under 5 volts of reverse bias. Electrical measurements yielded a low-dark current density: <7×10-9A/cm², at FPA operating voltage of 2 volts of reverse bias. [reprint (PDF)]
 
1.  Highly temperature insensitive quantum cascade lasers
Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi
Applied Physics Letters, Vol. 97, No. 25-- December 20, 2010 ...[Visit Journal]
An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T(0) and T(1), for operations above room temperature. A T(0) value of 383 K and a T(1) value of 645 K are obtained within a temperature range of 298–373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mm and a ridge width of 8 μm. [reprint (PDF)]
 
1.  High-Power Distributed-Feedback Quantum Cascade Lasers
W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J. Nguyen, A.J. Evans, J.S. Yu, S.R. Darvish, S. Slivken and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 6127, pp. 612704-- January 23, 2006 ...[Visit Journal]
Recently, a distributed-feedback quantum cascade laser operating in a single spectral mode at 4.8 µm and at temperatures up to 333 K has been reported. In the present work, we provide detailed measurements and modeling of its performance characteristics. The sidemode suppression ratio exceeds 25 dB, and the emission remains robustly single-mode at all currents and temperatures tested. Cw output powers of 99 mW at 298 K and 357 mW at 200 K are obtained at currents well below the thermal rollover point. [reprint (PDF)]
 
1.  Harmonic injection locking of high-power mid-infrared quantum cascade lasers
Feihu Wang, Steven Slivken, and Manijeh Razeghi
OSA Photonics Research •https://doi.org/10.1364/PRJ.423573 ...[Visit Journal]
High-power, high-speed quantum cascade lasers (QCLs) with stable emission in the mid-infrared regime are of great importance for applications in metrology, telecommunication, and fundamental tests of physics. Owing to the inter-sub-band transition, the unique ultrafast gain recovery time of the QCL with picosecond dynamics is expected to overcome the modulation limit of classical semiconductor lasers and bring a revolution for the next generation of ultrahigh-speed optical communication. Therefore, harmonic injection locking, offering the possibility to fast modulate and greatly stabilize the laser emission beyond the rate limited by cavity length, is inherently adapted to QCLs. In this work, we demonstrate for the first time the harmonic injection locking of a mid-infrared QCL with an output power over 1 watt in continuous-wave operation at 288 K. Compared with an unlocked laser, the inter-mode spacing fluctuation of an injection locked QCL can be considerably reduced by a factor above 1×10 E3, which permits the realization of an ultra-stable mid-infrared semiconductor laser with high phase coherence and frequency purity. Despite temperature change, this fluctuation can be still stabilized to hertz level by a microwave modulation up to ∼18 GHz. These results open up the prospect of the applications of mid-infrared QCL technology for frequency comb engineering, metrology and the next generation ultrahigh-speed telecommunication. It may also stimulate new schemes for exploring ultrafast mid-infrared pulse generation in QCLs. [reprint (PDF)]
 
1.  Fabrication of Indium Bumps for Hybrid Infrared Focal Plane Array Applications
J. Jiang, S. Tsao, T. O'Sullivan, M. Razeghi, and G.J. Brown
Infrared Physics and Technology, 45 (2)-- March 1, 2004 ...[Visit Journal]
Hybrid infrared focal plane arrays (FPAs) have found many applications. In hybrid IR FPAs, FPA and Si read out integrated circuits (ROICs) are bonded together with indium bumps by flip-chip bonding. Taller and higher uniformity indium bumps are always being pursued in FPA fabrication. In this paper, two indium bump fabrication processes based on evaporation and electroplating techniques are developed. Issues related to each fabrication technique are addressed in detail. The evaporation technique is based on a unique positive lithography process. The electroplating method achieves taller indium bumps with a high aspect ratio by a unique “multi-stack” technique. This technique could potentially benefit the fabrication of multi-color FPAs. Finally, a proposed low-cost indium bump fabrication technique, the “bump transfer”, is given as a future technology for hybrid IR FPA fabrication. [reprint (PDF)]
 
1.  Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
Arash Dehzangi, Ryan McClintock, Abbas Haddadi, Donghai Wu, Romain Chevallier, Manijeh Razeghi
Scientific Reports volume 9, Article number: 5003 -- March 21, 2019 ...[Visit Journal]
Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10−4 A/cm² under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 1010 cm·Hz½W-1. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10−10 A/cm² and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 1013 cm·Hz½/W [reprint (PDF)]
 
1.  High performance Type-II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M.Z. Tidrow, and V. Nathan
SPIE Conference, Orlando, FL, Vol. 5783, pp. 86-- March 28, 2005 ...[Visit Journal]
We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type-II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 µm up to 32 µm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays are presented. [reprint (PDF)]
 
1.  High power, room temperature, Terahertz sources and frequency comb based on Difference frequency generation at CQD
Manijeh Razeghi
Proc. of SPIE 12230, 1223006, September 2022 ...[Visit Journal]
Quantum cascade laser (QCL) is becoming the leading laser source in the mid-infrared and terahertz range due to its rapid development in power, efficiency, and spectral covering range. Owing to its unique intersubband transition and fast carrier lifetime, QCL possesses strong nonlinear susceptibilities that makes it the ideal platform for a variety of nonlinear optical generations. Among this, terahertz (THz) source based on difference-frequency generation (DFG)and frequency comb based on four wave mixing effect are the most exciting phenomena which could potentially revolutionize spectroscopy in mid-infrared (mid-IR) and THz spectral range. In this paper, we will briefly discuss the recent progress of our research. This includes high power high efficiency QCLs, high power room temperature THz sources based on DFG-QCL, room temperature THz frequency comb, and injection locking of high-power QCL frequency combs. The developed QCLs are great candidates as next generation mid-infrared source for spectroscopy and sensing. [reprint (PDF)]
 
1.  High-performance InP-based midinfrared quantum cascade lasers at Northwestern University
M. Razeghi, Y. Bai, S. Slivken, and S.R. Darvish
SPIE Optical Engineering, Vol. 49, No. 11, November 2010, p. 111103-1-- November 15, 2010 ...[Visit Journal]
We present recent performance highlights of midinfrared quantum cascade lasers (QCLs) based on an InP material system. At a representative wavelength around 4.7 µm, a number of breakthroughs have been achieved with concentrated effort. These breakthroughs include watt-level continuous wave operation at room temperature, greater than 50% peak wall plug efficiency at low temperatures, 100-W-level pulsed mode operation at room temperature, and 10-W-level pulsed mode operation of photonic crystal distributed feedback quantum cascade lasers at room temperature. Since the QCL technology is wavelength adaptive in nature, these demonstrations promise significant room for improvement across a wide range of mid-IR wavelengths. [reprint (PDF)]
 
1.  Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors
Ryan McClintock ; Manijeh Razeghi
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550U-- August 28, 2015 ...[Visit Journal]
AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon. [reprint (PDF)]
 
1.  High Power, Continuous-Wave, Quantum Cascade Lasers for MWIR and LWIR Applications
S. Slivken, A. Evans, J.S. Yu, S.R. Darvish and M. Razeghi
SPIE Conference, San Jose, CA, Vol. 6127, pp. 612703-- January 23, 2006 ...[Visit Journal]
Over the past several years, our group has endeavored to develop high power quantum cascade lasers for a variety of remote and high sensitivity infrared applications. The systematic optimization of laser performance has allowed for demonstration of high power, continuous-wave quantum cascade lasers operating above room temperature. Since 2002, the power levels for individual devices have jumped from 20 mW to 600 mW. Expanding on this development, we have able to demonstrate continuous wave operation at many wavelengths throughout the mid- and far-infrared spectral range, and have now achieved >100 mW output in the 4.0 to 9.5 µm range. [reprint (PDF)]
 
1.  Intersubband hole absorption in GaAs-GaInP Quantum Wells grown by Gas Source Molecular Beam Epitaxy
J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi with G. Brown and S.M. Hegde (Wright Laboratory)
Applied Physics Letters 65 (9)-- August 29, 1994 ...[Visit Journal]
P-doped GaAs‐GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half‐maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated. [reprint (PDF)]
 
1.  Demonstration of 256x256 Focal Plane Arrays Based on Al-free GaInAs/InP QWIP
J. Jiang, K. Mi, R. McClintock, M. Razeghi, G.J. Brown, and C. Jelen
IEEE Photonics Technology Letters 15 (9)-- September 1, 2003 ...[Visit Journal]
We report the first demonstration of an infrared focal plane array based on aluminum-free GaInAs-InP quantum-well infrared photodetectors (QWIPs).A unique positive lithography method was developed to perform indium-bump liftoff. The noise equivalent differential temperature (NEΔT) of 29 mK was achieved at 70 K with f/2 optics. [reprint (PDF)]
 
1.  Influence of Residual Impurity Background on the Non-radiative Recombination Processes in High Purity InAs/GaSb superlattice Photodiodes
E.C.F. da Silva, D. Hoffman, A. Hood, B. Nguyen, P.Y. Delaunay and M. Razeghi
Applied Physics Letters, 89 (24)-- December 11, 2006 ...[Visit Journal]
The influence of the impurity background on the recombination processes in type-II InAs/GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8 μm was investigated by electroluminescence measurements. Using an iterative fitting procedure based on the dependence of the quantum efficiency of the electroluminescence on the injection current, the Auger and Shockley-Read-Hall lifetimes were determined [reprint (PDF)]
 
1.  Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
A. Hood, M. Razeghi, V. Nathan and M.Z. Tidrow
SPIE Conference, San Jose, CA, Vol. 6127, pp. 61270U-- January 23, 2006 ...[Visit Journal]
The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) Type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary Type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 µm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength Type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5×1014 cm-3. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. [reprint (PDF)]
 
1.  High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices
Romain Chevallier, Abbas Haddadi, Ryan McClintock, Arash Dehzangi , Victor Lopez-Dominguez, Pedram Khalili Amiri, Manijeh Razeghi
IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 6-- December 1, 2018 ...[Visit Journal]
InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 µm and a −3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 µm diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance. [reprint (PDF)]
 
1.  High-Performance InP-Based Mid-IR Quantum Cascade Lasers
M. Razeghi
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No. 3, May-June 2009, p. 941-951.-- June 5, 2009 ...[Visit Journal]
Quantum cascade lasers (QCLs) were once considered as inefficient devices, as the wall-plug efficiency (WPE) was merely a few percent at room temperature. But this situation has changed in the past few years, as dramatic enhancements to the output power andWPE have been made for InP-based mid-IR QCLs. Room temperature continuous-wave (CW) output power as high as 2.8 W and WPE as high as 15% have now been demonstrated for individual devices. Along with the fundamental exploration of refining the design and improving the material quality, a consistent determination of important device performance parameters allows for strategically addressing each component that can be improved potentially. In this paper, we present quantitative experimental evidence backing up the strategies we have adopted to improve the WPE for QCLs with room temperature CW operation. [reprint (PDF)]
 
1.  AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, and M. Razeghi
Appl. Phys. Lett. 103, 191108 (2013)-- November 5, 2013 ...[Visit Journal]
We report on high performance AlxGa1−xN-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is grown via metalorganic chemical vapor deposition. Then, we systematically optimized the device design and material doping through the growth and processing of multiple devices. After optimization, uniform and solar-blind operation is observed throughout the array; at the peak detection wavelength of 275 nm, 729 μm² area PD showed unbiased peak external quantum efficiency and responsivity of ∼80% and ∼176 mA/W, respectively, increasing to 89% under 5 V of reverse bias. Taking the reflection loses into consideration, the internal quantum efficiency of these optimized PD can be estimated to be as high as ∼98%. The visible rejection ratio measured to be more than six orders of magnitude. Electrical measurements yielded a low-dark current density: <2 × 10−9 A/cm², at 10 V of reverse bias. [reprint (PDF)]
 
1.  High-power, room-temperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ = 4.8 µm
J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi
Virtual Journal of Nanoscale Science and Technology 12 (5)-- August 1, 2005 ...[Visit Journal][reprint (PDF)]
 
1.  The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, S. Bogdanov, P. Manukar, M. Razeghi, and V. Nathan
SPIE Proceedings, San Jose, CA Volume 7222-15-- January 26, 2009 ...[Visit Journal]
The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - pi - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 µm. [reprint (PDF)]
 

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