Center for Quantum Devices - Most Downloaded Journal Articles

Page 20 of 31: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 >> Next (770 Items)

15.	Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994 ...[Visit Journal] We report an analysis of the heteroepitaxial interfaces in high quality GaInP–GaAs superlattices grown simultaneously on GaAs and Si substrates by gas source molecular beam epitaxy. These two superlattices have been studied using high resolution x-ray diffraction measurements. Sharp superlattice satellites, with very little broadening, are observed within a 6° range for the sample on GaAs. Photoluminescence peaks with full widths at half-maximums of 5 and 7 meV are obtained at 4 K for samples with 58 Å wells on GaAs and Si, respectively. Room temperature exciton absorption is observed in the photovoltage measurements for a superlattice grown on Si substrate. The thicknesses determined by x-ray analysis are consistent with those obtained by a Kronig–Penny model fitting of the photovoltage spectroscopy. [reprint (PDF)]
15.	Status of III-V semiconductor thin films and their applications to future OEICs Manijeh Razeghi Proc. SPIE 10267, Integrated Optics and Optoelectronics, 102670T -- June 26, 2017 ...[Visit Journal] In the last decade, semiconductor technology has been advanced to a great extent in terms of electronic and photonic discrete devices. One of the main reasons for such a progress, is the result of advancement in the epitaxial growth techniques such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), where device quality films can be grown with great control over composition, uniformity and thickness. MOCVD has proven to be one of the best growth methods for many IH-V semiconductor thin films 1. Its flexibility and potential to yield a broad range of growth rates resulted in the layers featuring the thicknesses from tens of microns down to several nanometers. Planar structures containing quantum wells with atomically flat interfaces, superlattices, strained or graded-index layers were successfully grown by MOCVD. Furthermore, MOCVD proved its efficiency in producing a laser devices by overgrowth and epitaxy on patterned substrates. The importance of MOCVD is strongly enhanced by the possibility of large-scale production by simultaneous growth on several substrates in one process. Several III-V semiconductor films with bandgaps ranging from infrared to ultraviolet (15 to 0.2 μm) have been successfully grown by MOCVD. [reprint (PDF)]
15.	Positive and negative luminescence in binary Type-II InAs/GaSb superlattice photodiodes D. Hoffman and M. Razeghi SPIE Conference, San Jose, CA, Vol. 6127, pp. 61271H-- January 23, 2006 ...[Visit Journal] In the present work, we show measurements of both positive and negative luminescence of binary Type-II InAs/GaSb superlattice photodiodes in the 3 to 13 μm spectral range. Through a radiometric calibration technique, we demonstrate temperature independent negative luminescence efficiencies of 45 % in the midwavelength (MWIR) sample from 220 K to 320 K without anti-reflective coating and values reaching 35 % in the long wavelength infrared (LWIR) spectrum sample. [reprint (PDF)]
15.	Room temperature quantum cascade laser with ∼ 31% wall-plug efficiency F. Wang, S. Slivken, D. H. Wu, and M. Razeghi AIP Advances 10, 075012-- July 14, 2020 ...[Visit Journal] In this article, we report the demonstration of a quantum cascade laser emitting at λ ≈ 4.9 μm with a wall-plug efficiency of ∼31% and an output power of ∼23 W in pulsed operation at room temperature with 50 cascade stages (Ns). With proper fabrication and packaging, this buried ridge quantum cascade laser with a cavity length of 5 mm delivers more than ∼15 W output power, and its wall-plug efficiency exceeds ∼20% at 100 °C. The experimental results of the lasers are well in agreement with the numerical predictions. [reprint (PDF)]
15.	Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs_1−xSb_x type-II superlattices A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi Applied Physics Letters 106 , 011104-- January 8, 2015 ...[Visit Journal] A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs_1−xSb_x type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10⁻⁷ A/cm² under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 10¹² cm·Hz^½·W^-1 at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10⁻⁴ A/cm² under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 10¹¹ cm·Hz^½·W^-1. [reprint (PDF)]
15.	Negative and positive luminescence in mid-wavelength infrared InAs/GaSb superlattice photodiodes D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi IEEE Journal of Quantum Electronics, 41 (12)-- December 1, 2005 ...[Visit Journal] The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination. [reprint (PDF)]
15.	Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys M. Razeghi, J.P. Duchemin M. Razeghi, J.P. Duchemin, Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys, Journal of Crystal Growth, Volume 70, Issues 1–2, 1984, Pages 145-149,-- December 1, 1984 ...[Visit Journal] The low pressure metalorganic chemical vapour deposition (LPMOCVD) growth of GaxIn1-xAsyP1-y-InP lattice matched system, with high mobilities, sharp interfaces, low background doping densities, and the formation of a two-dimensional electron gas (2DEG) at the interfaces, has recently made spectacular advances, as in evidenced by the availability of high quality DH lasers, PIN photodiodes, and Gunn diodes. We present here some new results obtained on the above-mentioned material and devices. [reprint (PDF)]
15.	Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition Omnes F., and Razeghi M. Applied Physics Letters 59 (9), p. 1034-- May 28, 1991 ...[Visit Journal] Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga_0.51In_0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements. [reprint (PDF)]
15.	Thin film transistors with wurtzite ZnO channels grown on Si₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi Proc. SPIE 7603, Oxide-based Materials and Devices, 760318 (March 02, 2010)-- March 7, 2010 ...[Visit Journal] Thin Film Transistors (TFT) were made by growing ZnO on Si₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a V_ON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications. [reprint (PDF)]
14.	Use of Sacrificial Zinc Oxide Template Layers for Epitaxial Lift-Off of Yttria-Stabilised Zirconia Thin Films D. J. Rogers, T. Maroutian, V. E. Sandana, P. Lecoeur, F. H. Teherani, P. Bove and M. Razeghi Proc. of SPIE 11687, 116872C (2021) ...[Visit Journal] 275 nm-thick Yttria-stabilised zirconia (YSZ) layers were grown on 240 nm-thick epitaxial (0002)-oriented ZnO buffer layers on c-sapphire substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) studies revealed high quality epitaxial growth with the YSZ having a preferential (111) orientation and a root mean square surface roughness of 1.4 nm over an area of 10 um x 10 um. The YSZ top surface was then temporary bonded to an Apiezon W wax carrier and the sample was immersed in 0.1M HCl so as to preferentially etch/dissolve away the ZnO underlayer and release of the YSZ from the sapphire substrate. XRD revealed only the characteristic (111) peak of YSZ after lift-off and thus confirmed both the dissolution of the ZnO and the preservation of the crystallographic integrity of the YSZ on the wax carrier. Optical and Atomic Force Microscopy revealed some buckling, roughening and cracking of the lifted YSZ, however, which was probably due to tensile epitaxial strain release. [reprint (PDF)]
14.	Impact of scaling base thickness on the performance of heterojunction phototransistors Arash Dehzangi, Abbas Haddadi, Sourav Adhikary, and Manijeh Razeghi Nanotechnology 28, 10LT01-- February 2, 2017 ...[Visit Journal] In this letter we report the effect of vertical scaling on the optical and electrical performance of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb superlattices. The performance of devices with different base thickness was compared as the base was scaled from 60 down to 40 nm. The overall optical performance shows enhancement in responsively, optical gain, and specific detectivity upon scaling the base width. The saturated responsivity for devices with 40 nm bases reaches 8,845 and 9,528 A/W at 77 and 150 K, respectively, which is almost five times greater than devices with 60 nm bases. The saturated optical gain for devices with 40 nm bases is measured as 2,760 at 77 K and 3,081 at 150 K. The devices with 40 nm bases also exhibit remarkable enhancement in saturated current gain, with 17,690 at 77 K, and 19,050 at 150 K. [reprint (PDF)]
14.	High-Power (~9 μm) Quantum Cascade Lasers S. Slivken, Z. Huang, A. Evans, and M. Razeghi Virtual Journal of Nanoscale Science and Technology 5 (22)-- June 3, 2002 ...[Visit Journal][reprint (PDF)]
14.	Miniaturization: enabling technology for the new millennium M. Razeghi and H. Mohseni SPIE International Conference on Solid State Crystals, Zakopane, Poland, -- April 1, 2001 ...[Visit Journal] The history of semiconductor devices has been characterized by a constant drive toward lower dimensions in order to increase integration density, system functionality and performance. However, this is still far from being comparable with the performance of natural systems such as human brain. The challenges facing semiconductor technologies in the millennium will be to move toward miniaturization. The influence of this trend on the quantum sensing of infrared radiation is one example that is elaborated here. A new generation of infrared detectors has been developed by growing layers of different semiconductors with nanometer thicknesses. The resulted badgap engineered semiconductor has superior performance compared to the bulk material. To enhance this technology further, we plan to move from quantum wells to quantum wire and quantum dots. [reprint (PDF)]
14.	Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power Y. Bai, S.R. Darvish, S. Slivken, W. Zhang, A. Evans, J. Nguyen and M. Razeghi Applied Physics Letters, Vol. 92, No. 10, p. 101105-1-- March 10, 2008 ...[Visit Journal] We demonstrate quantum cascade lasers at an emitting wavelength of 4.6 µm, which are capable of room temperature, high power continuous wave (cw) operation. Buried ridge geometry with a width of 9.8 µm was utilized. A device with a 3 mm cavity length that was epilayer-down bonded on a diamond submount exhibited a maximum output power of 1.3 W at room temperature in cw operation. The maximum output power at 80 K was measured to be 4 W, with a wall plug efficiency of 27%. [reprint (PDF)]
14.	The new oxide paradigm for solid state ultraviolet photodetectors D. J. Rogers, P. Bove, X. Arrateig, V. E. Sandana, F. H. Teherani, M. Razeghi, R. McClintock, E. Frisch, S. Harel, Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105331P-- March 22, 2018 ...[Visit Journal] The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al₂O₃ substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 x 10⁵ and dark signals of 300 pA (at a bias of −5V). Spectral responsivities were engineered to fit the “Deutscher Verein des Gas- und Wasserfaches” industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga₂O₃ layers were also grown on 2 inch diameter c-Al₂O₃ substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga₂O₃ (monoclinic) polytype with strong (−201) orientation. β-Ga₂O₃ MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at −5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing. [reprint (PDF)]
14.	High Detectivity InGaAs/InGaP Quantum-Dot Infrared Photodetectors Grown by Low Pressure Metalorganic Chemical Vapor Deposition J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G.J. Brown, and M.Z. Tidrow Applied Physics Letters, 84 (12)-- April 22, 2004 ...[Visit Journal] We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector (QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low pressure metalorganic chemical vapor deposition. Photoresponse was observed at temperatures above 200 K with a peak wavelength of 4.7 µm and cutoff wavelength of 5.2 µm. The background limited performance temperature was 140 K, and this was attributed to the super low dark current observed in this QDIP. A detectivity of 3.6×10¹⁰ cm·Hz^½/W, which is comparable to the state-of-the-art quantum well infrared photodetectors in a similar wavelength range, was obtained for this InGaAs/InGaP QDIP at both T = 77 K and T = 95 K at biases of –1.6 and –1.4 V, [reprint (PDF)]
14.	EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2 M. Razeghi, B. Houlier and M. Yuste M. Razeghi et al. EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2, Solid State Communications, Vol. 26, pp. 665-668. -- January 26, 1978 ...[Visit Journal] The spin Hamiltonian parameters of Mn 2÷ have been measured above and below the transition point (180"C) of the lead phosphate. They show that Mn 2+ substitutes a Pbl ion. Between 175 and 180vC the principal axis OX of the fine tensor is parallel to the wave vector of the soft mode which condensates at the transition point. An exaltation of the linewidth is observed. The linewidth remains constant within 50C of Te; in this temperature range, the "static regime" is achieved, and the correlation time of the fluctuations is less than 10 -s sec. [reprint (PDF)]
14.	High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, J. Diaz, and M. Razeghi Applied Physics Letters 74 (5)-- February 1, 1999 ...[Visit Journal] We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal–semiconductor–metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were <10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10−24 A²/Hz) up to 5 V, for the undoped GaN MSM detector. [reprint (PDF)]
14.	Kinetics of photoconductivity in n-type GaN photodetector P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, and M. Razeghi Applied Physics Letters 67 (25)-- December 18, 1995 ...[Visit Journal] High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency‐dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation‐dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. [reprint (PDF)]
14.	High performance antimony based type-II superlattice photodiodes on GaAs substrates B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi SPIE Porceedings, Vol. 7298, Orlando, FL 2009, p. 72981T-- April 13, 2009 ...[Visit Journal] In recent years, Type-II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type-II superlattice infrared detector a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is a significant step toward third generation infrared imaging at low cost. The device performances of Type-II superalttice photodetectors grown on these two substrates are compared. [reprint (PDF)]
14.	Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors Romain Chevallier, Abbas Haddadi, & Manijeh Razeghi Scientific Reports 7, Article number: 12617-- October 3, 2017 ...[Visit Journal] Microjunction InAs/InAsSb type-II superlattice-based long-wavelength infrared photodetectors with reduced dark current density were demonstrated. A double electron barrier design was employed to reduce both bulk and surface dark currents. The photodetectors exhibited low surface leakage after passivation with SiO2, allowing the use of very small size features without degradation of the dark current. Fabricating microjunction photodetectors (25 × 25 µm² diodes with 10 × 10 µm² microjunctions) in combination with the double electron barrier design results in a dark current density of 6.3 × 10⁻⁶ A/cm² at 77 K. The device has an 8 µm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 µm-thick absorption region, which results in a specific detectivity value of 1.2 × 10¹² cm·Hz^½/W. [reprint (PDF)]
14.	Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films K. Dasari, J. Wang, W.M. Jadwisienczak, V. Dierolf, M. Razeghi, R. Palai Journal of Luminescence Volume 209, May 2019, Pages 237-243-- January 14, 2019 ...[Visit Journal] We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis oriented growth. The concentration of Yb and In was obtained by X-ray photoelectron spectroscopy (XPS) and was found to be 5 (+/- 0.5) at.% and 30 (+/- 1.5) at.%, respectively. The GaN:Yb and InGaN:Yb thin films show a significant linewidth narrowing in PL spectra compared to GaN and InGaN thin films. This could be attributed to the reduction of the defect related non-radiative recombination paths and suppression of the structural defects and dislocations because of the in situ rare earth (Yb)-doping during the growth. The temperature dependent photoluminescence of GaN:Yb thin film follows the Varshni model, whereas InGaN:Yb film shows a complex S-shaped like behavior, which can be explained by the localization effect using the Band-Tail model. [reprint (PDF)]
14.	High-power, room-temperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ = 4.8 µm J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi Applied Physics Letters, 87 (4)-- July 25, 2005 ...[Visit Journal] The authors present high-power continuous-wave (cw) operation of distributed-feedback quantum-cascade lasers. Continuous-wave output powers of 56 mW at 25 °C and 15 mW at 40 °C are obtained. Single-mode emission near 7.8 µm with a side-mode suppression ratio of >=30 dB and a tuning range of 2.83 cm⁻¹ was obtained between 15 and 40 °C. The device exhibits no beam steering with a full width at half maximum of 27.4° at 25 °C in cw mode. [reprint (PDF)]
14.	Intrinsic AlGaN photodetectors for the entire compositional range D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi SPIE Conference, San Jose, CA, -- February 12, 1997 ...[Visit Journal] Al_xGa_1-xN ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 X 10⁸ cm·Hz^½/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in Al_xGa_1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples. [reprint (PDF)]
14.	Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam, and R. McClintock Journal of ELECTRONIC MATERIALS, Vol. 43, No. 8, 2014-- August 1, 2014 ...[Visit Journal] Type II superlattices (T2SLs), a system of interacting multiquantum wells,were introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention, especially for infrared detection and imaging. In recent years, the T2SL material system has experienced incredible improvements in material growth quality, device structure design, and device fabrication techniques that have elevated the performance of T2SL-based photodetectors and focal-plane arrays (FPAs) to a level comparable to state-of-the-art material systems for infrared detection and imaging, such as mercury cadmium telluride compounds. We present the current status of T2SL-based photodetectors and FPAs for imaging in different infrared regimes, from short wavelength to very long wavelength, and dual-band infrared detection and imaging, as well as the future outlook for this material system. [reprint (PDF)]

Page 20 of 31: Prev << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 >> Next (770 Items)