Center for Quantum Devices - Most Downloaded Journal Articles

Page 2 of 7: Prev << 1 2 3 4 5 6 7 >> Next (160 Items)

4.	Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, and Manijeh Razeghi Appl. Phys. Lett. 116, 221103 https://doi.org/10.1063/5.0010273-- June 2, 2020 ...[Visit Journal] In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 μm, corresponding to a quantum efficiency of 23.5% under Vb = −80 mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 μm. With an R0 × A value of 1.53 × 104 Ω cm2 and a dark current density of 1.23 × 10−6 A/cm2 under an applied bias of −80 mV at 77 K, the photodetectors exhibit a specific detectivity of 9.12 × 1011 cm·Hz1/2/W. [reprint (PDF)]
4.	High brightness angled cavity quantum cascade lasers D. Heydari, Y. Bai, N. Bandyopadhyay, S. Slivken, and M. Razeghi Applied Physics Letters 106, 091105-- March 6, 2015 ...[Visit Journal] A quantum cascade laser (QCL) with an output power of 203 W is demonstrated in pulsed mode at 283 K with an angled cavity. The device has a ridge width of 300 μm, a cavity length of 5.8 mm, and a tilt angle of 12°. The back facet is high reflection coated, and the front facet is anti-reflection coated. The emitting wavelength is around 4.8 μm. In distinct contrast to a straight cavity broad area QCL, the lateral far field is single lobed with a divergence angle of only 3°. An ultrahigh brightness value of 156 MW cm²·sr^-1 is obtained, which marks the brightest QCL to date. [reprint (PDF)]
4.	Extended short wavelength infrared heterojunction phototransistors based on type II superlattices Arash Dehzangi , Ryan McClintock, Donghai Wu , Abbas Haddadi, Romain Chevallier , and Manijeh Razeghi Applied Physics Letters 114, 191109-- May 17, 2019 ...[Visit Journal] A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of 2.3 λ at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 X 10³ A/cm² and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 X 10¹¹ cm·Hz^½/W at 300 K which remains constant over a broad range of wavelengths and applied biases. [reprint (PDF)]
4.	High speed type-II superlattice based photodetectors transferred on sapphire Arash Dehzangi, Ryan McClintock, Donghai Wu, Jiakai Li, Stephen Johnson, Emily Dial and Manijeh Razeghi Applied Physics Express, Volume 12, Number 11-- October 3, 2019 ...[Visit Journal] We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the −3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance. Direct Link [reprint (PDF)]
4.	High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs Steven Slivken and Manijeh Razeghi Photonics 2022, 9(4), 231 (COVER ARTICLE) ...[Visit Journal] The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as Si. As evidence, an InP-based mid-infrared quantum cascade laser structure was grown on a GaAs substrate, which has a large (4%) lattice mismatch with respect to InP. Prior to laser core growth, a metamorphic buffer layer of InP was grown directly on a GaAs substrate to adjust the lattice constant. Wafer characterization data are given to establish general material characteristics. A simple fabrication procedure leads to lasers with high peak power (>14 W) at room temperature. These results are extremely promising for direct quantum cascade laser growth on Si substrates. [reprint (PDF)]
4.	Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer Steven Slivken and Manijeh Razeghi S. Slivken and M. Razeghi,, Journal of Quantum Electronics, Vol. 59, No. 4, doi: 10.1109/JQE.2023.3282710 ...[Visit Journal] We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35 μm. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of >0.7 W near room temperature. [reprint (PDF)]
4.	Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice Arash Dehzangi, Jiakai Li, Manijeh Razeghi Photonics 2021, 8(5), 148; https://doi.org/10.3390/photonics8050148 Received: 8 March 2021 / Revised: 12 April 2021 / Accepted: 25 April 2021 / Published: 30 April 2021 ...[Visit Journal] We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved. [reprint (PDF)]
4.	Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices Jiakai Li, Arash Dehzangi, Manijeh Razeghi Infrared Physics & Technology Volume 113, March 2021, 103641 ...[Visit Journal] In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs)based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K. [reprint (PDF)]
4.	-- November 30, 1999
4.	High power, high wall-plug efficiency, high reliability, continuous-wave operation quantum cascade lasers at Center for Quantum Devices Razeghi, Manijeh SPIE Proceedings Volume 11296, Optical, Opto-Atomic, and Entanglement-Enhanced Precision Metrology II; 112961C-- February 25, 2020 ...[Visit Journal] Since the demonstration of the first quantum cascade laser (QCL) in 1997, QCLs have undergone considerable developments in output power, wall plug efficiency (WPE), beam quality, wavelength coverage and tunability. Among them, many world-class breakthroughs were achieved at the Center for Quantum Device at Northwestern University. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the QCL family on high power, high wall-plug efficiency (WPE), continuous-wave (CW) and room temperature operation lasers. [reprint (PDF)]
3.	High quantum efficiency mid-wavelength infrared type-II InAs/InAs_1-xSb_x superlattice photodiodes grown by metal-organic chemical vapor deposition Donghai Wu , Quentin Durlin, Arash Dehzangi , Yiyun Zhang , and Manijeh Razeghi Appl. Phys. Lett. 114, 011104-- January 8, 2019 ...[Visit Journal] We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs_1-xSb_x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 um, the dark current density is 3.3x10⁻⁴ A/cm² under −20mV bias, and the peak responsivity is 1.76A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2x10¹¹cmHz^1/2/W is achieved at 4.0 um under −20mV bias at 150 K. [reprint (PDF)]
3.	Dark current reduction in microjunction-based compound electron barrier type-II InAs/InAs1-xSbx superlattice-based long-wavelength infrared photodetectors Romain Chevallier, Abbas Haddadi, Manijeh Razeghi Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV Page. 1054007-1-- January 26, 2018 ...[Visit Journal] Reduction of dark current density in microjunction-based InAs/InAs_1-xSb_x type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface dark currents. The photodetectors exhibited high surface resistivity after passivation with SiO₂, which permits the use of small size features without having strong surface leakage current degrading the electrical performance. Fabricating a microjunction structure (25×25 μm² mesas with 10×10 μm² microjunctions) with this photodetector double barrier design results in a dark current density of 6.3×10^-6 A/cm² at 77 K. The device has an 8 μm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 μm-thick absorption region, which results in a specific detectivity value of 1.2×10¹² cm·Hz^1/2/W at 77 K. [reprint (PDF)]
3.	Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well B. Movaghar, S. Tsao, S. Abdollahi Pour, T. Yamanaka, and M. Razeghi Physical Review B, Vol. 78, No. 11-- September 15, 2008 ...[Visit Journal] We consider the problem of charge transport and recombination in semiconductor quantum well infrared photodetectors and quantum-dot-in-a-well infrared detectors. The photoexcited carrier relaxation is calculated using rigorous random-walk and diffusion methods, which take into account the finiteness of recombination cross sections, and if necessary the memory of the carrier generation point. In the present application, bias fields are high and it is sufficient to consider the drift limited regime. The photoconductive gain is discussed in a quantum-mechanical language, making it more transparent, especially with regard to understanding the bias and temperature dependence. Comparing experiment and theory, we can estimate the respective recombination times. The method developed here applies equally well to nanopillar structures, provided account is taken of changes in mobility and trapping. Finally, we also derive formulas for the photocurrent time decays, which in a clean system at high bias are sums of two exponentials. [reprint (PDF)]
3.	Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, Alexander Jaud and Manijeh Razeghi Photonics 2020, 7(3), 68; https://doi.org/10.3390/photonics7030068-- September 3, 2020 ...[Visit Journal] In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W. [reprint (PDF)]
3.	Harmonic injection locking of high-power mid-infrared quantum cascade lasers Feihu Wang, Steven Slivken, and Manijeh Razeghi OSA Photonics Research •https://doi.org/10.1364/PRJ.423573 ...[Visit Journal] High-power, high-speed quantum cascade lasers (QCLs) with stable emission in the mid-infrared regime are of great importance for applications in metrology, telecommunication, and fundamental tests of physics. Owing to the inter-sub-band transition, the unique ultrafast gain recovery time of the QCL with picosecond dynamics is expected to overcome the modulation limit of classical semiconductor lasers and bring a revolution for the next generation of ultrahigh-speed optical communication. Therefore, harmonic injection locking, offering the possibility to fast modulate and greatly stabilize the laser emission beyond the rate limited by cavity length, is inherently adapted to QCLs. In this work, we demonstrate for the first time the harmonic injection locking of a mid-infrared QCL with an output power over 1 watt in continuous-wave operation at 288 K. Compared with an unlocked laser, the inter-mode spacing fluctuation of an injection locked QCL can be considerably reduced by a factor above 1×10 E3, which permits the realization of an ultra-stable mid-infrared semiconductor laser with high phase coherence and frequency purity. Despite temperature change, this fluctuation can be still stabilized to hertz level by a microwave modulation up to ∼18 GHz. These results open up the prospect of the applications of mid-infrared QCL technology for frequency comb engineering, metrology and the next generation ultrahigh-speed telecommunication. It may also stimulate new schemes for exploring ultrafast mid-infrared pulse generation in QCLs. [reprint (PDF)]
3.	Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Undoped Ga2O3 MSM Photodetectors Grown by Pulsed Laser Deposition D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116872D (24 March 2021); doi: 10.1117/12.2596194 ...[Visit Journal] Ga2O3 layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3 (monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias. [reprint (PDF)]
3.	Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers Zhichao Chen , Andong Liu, Dong Chang , Sukhdeep Dhillon , Manijeh Razeghi , Feihu Wang Journal of Applied Physics, 135, 115703 ...[Visit Journal] Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources for the THz range but are complex to model. An efficient extended rate equation model is developed here by incorporating the resonant tunneling mechanism from the density matrix formalism, which permits to simulate THz QCLs with thick carrier injection barriers within the semi-classical formalism. A self-consistent solution is obtained by iteratively solving the Schrödinger-Poisson equation with this transport model. Carrier-light coupling is also included to simulate the current behavior arising from stimulated emission. As a quasi-ab initio model, intermediate parameters such as pure dephasing time and optical linewidth are dynamically calculated in the convergence process, and the only fitting parameters are the interface roughness correlation length and height. Good agreement has been achieved by comparing the simulation results of various designs with experiments, and other models such as density matrix Monte Carlo and non-equilibrium Green’s function method that, unlike here, require important computational resources. The accuracy, compatibility, and computational efficiency of our model enables many application scenarios, such as design optimization and quantitative insights into THz QCLs. Finally, the source code of the model is also provided in the supplementary material of this article for readers to repeat the results presented here, investigate and optimize new designs. [reprint (PDF)]
3.	High operability 1024 x 1024 long wavelength Type-II superlattice focal plane array A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi IEEE Journal of Quantum Electronics (JQE), Vol. 48, No. 2, p. 221-228-- February 10, 2012 ...[Visit Journal] Electrical and radiometric characterization results of a high-operability 1024 x 1024 long wavelength infrared type-II superlattice focal plane array are described. It demonstrates excellent quantum efficiency operability of 95.8% and 97.4% at operating temperatures of 81 K and 68 K, respectively. The external quantum efficiency is 81% without any antireflective coating. The dynamic range is 37 dB at 81 K and increases to 39 dB at 68 K operating temperature. The focal plane array has noise equivalent temperature difference as low as 27 mK and 19 mK at operating temperatures of 81 K and 68 K, respectively, using f/2 optics and an integration time of 0.13 ms. [reprint (PDF)]
3.	Quantum cascade lasers that emit more light than heat Y. Bai, S. Slivken, S. Kuboya, S.R. Darvish and M. Razeghi Nature Photonics, February 2010, Vol. 4, p. 99-102-- February 1, 2010 ...[Visit Journal] For any semiconductor lasers, the wall plug efficiency, that is, the portion of the injected electrical energy that can be converted into output optical energy, is one of the most important figures of merit. A device with a higher wall plug efficiency has a lower power demand and prolonged device lifetime due to its reduced self-heating. Since its invention, the power performance of the quantum cascade laser has improved tremendously. However, although the internal quantum efficiency can be engineered to be greater than 80% at low temperatures, the wall plug efficiency of a quantum cascade laser has never been demonstrated above 50% at any temperature. The best wall plug efficiency reported to date is 36% at 120 K. Here, we overcome the limiting factors using a single-well injector design and demonstrate 53% wall plug efficiency at 40 K with an emitting wavelength of 5 µm. In other words, we demonstrate a quantum cascade laser that produces more light than heat. [reprint (PDF)]
3.	III-Nitride/Ga2O3 heterostructure for future power electronics: opportunity and challenges Nirajman Shrestha, Jun Hee Lee, F. H. Teherani, Manijeh Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950B (28 January - 1 February 2024, San Francisco)http://dx.doi.org/10.1117/12.3011688 ...[Visit Journal] Ga2O3 has become the new focal point of high-power semiconductor device research due to its superior capability to handle high voltages in smaller dimensions and with higher efficiencies compared to other commercialized semiconductors. However, the low thermal conductivity of the material is expected to limit device performance. To compensate for the low thermal conductivity of Ga2O3 and to achieve a very high density 2-dimensional electron gas (2DEG), an innovative idea is to combine Ga2O3 with III-Nitrides (which have higher thermal conductivity), such as AlN. However, metal-polar AlN/β-Ga2O3 heterojunction provides type-II heterojunction which are beneficial for optoelectronic application, because of the negative value of specific charge density. On the other hand, N-polar AlN/β- Ga2O3 heterostructures provide higher 2DEG concentration and larger breakdown voltage compared to conventional AlGaN/GaN devices. This advancement would allow the demonstration of RF power transistors with a 10x increase in power density compared to today’s State of the Art (SoA) and provide a solution to size, weight, and power-constrained applications [reprint (PDF)]
3.	Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm Lakshay Gautam, Alexandre Guillaume Jaud, Junhee Lee, Gail J. Brown, Manijeh Razeghi Published in: IEEE Journal of Quantum Electronics ( Volume: 57, Issue: 2, April 2021) ...[Visit Journal] We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of ~14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas 25 μm×25 μm. Single photon detection efficiencies of ~5% were achieved. [reprint (PDF)]
3.	Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs-GaSb superlattices P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, and M. Razeghi IEEE Journal of Quantum Electronics, Vol. 45, No. 2, p. 157-162.-- February 1, 2009 ...[Visit Journal] The recent introduction of a M-structure design improved both the dark current and R₀A performances of Type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels was measured between 1.1 and 1.6 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without antireflective coating was 74%. The noise equivalent temperature difference reached 23 mK, limited only by the performance of the testing system and the read out integrated circuit. Background limited performances were demonstrated at 81 K for a 300 K background. [reprint (PDF)]
3.	High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection A. M. Hoang, G. Chen, R. Chevallier, A. Haddadi, and M. Razeghi Appl. Phys. Lett. 104, 251105 (2014)-- June 23, 2014 ...[Visit Journal] Very long wavelength infrared photodetectors based on InAs/InAsSb Type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm², it provided a specific detectivity of 1.4 × 10¹⁰ Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K. [reprint (PDF)]
3.	Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation F. Wang, S. Slivken, D. H. Wu, Q. Y. Lu, and M. Razeghi AIP Advances 10, 055120-- May 19, 2020 ...[Visit Journal] In this paper, we report a post-polishing technique to achieve nearly complete surface planarization for the buried ridge regrowth processing of quantum cascade lasers. The planarized device geometry improves the thermal conduction and reliability and, most importantly, enhances the power and efficiency in continuous wave operation. With this technique, we demonstrate a high continuous wave wall-plug efficiency of an InP-based quantum cascade laser reaching ∼41% with an output power of ∼12 W from a single facet operating at liquid nitrogen temperature. At room temperature, the continuous wave output power exceeds the previous record, reaching ∼5.6 W. [reprint (PDF)]
3.	High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates A. Saxler, P. Kung, C.J. Sun, E. Bigan and M. Razeghi Applied Physics Letters 64 (3)-- January 17, 1994 ...[Visit Journal] In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00·1) sapphire exhibited a better crystalline quality than that grown on (01·2) sapphire. An x-ray rocking curve of AlN on (00·1) Al₂O₃ yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01·2) Al₂O₃ was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00·1) Al₂O₃ was about 197 nm. [reprint (PDF)]

Page 2 of 7: Prev << 1 2 3 4 5 6 7 >> Next (160 Items)