Center for Quantum Devices - Most Downloaded Journal Articles

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15.	ZnO 3D flower-like nanostructure synthesized on GaN epitaxial layer by simple route hydrothermal process J.M. Jung, C.R. Kim, H. Ryu, M. Razeghi and W.G. Jung Journal of Alloys and Compounds-- September 15, 2007 ...[Visit Journal] The 3D type, flower-like ZnO nanostructures from particle to flower-like or chestnut bur are fabricated on the GaN epitaxial layer substrate through the simple-route hydrothermal process. Structural characterization was made for the ZnO 3D nanostructures synthesized in different pH ranging from 9.5 to 11.0. The growth model was proposed and discussed regarding the fabrication mechanism and morphology of ZnO 3D flower-like nanostructure. The flower-like ZnO is composed of many thin single crystals ZnO nanorods. Bigger and thicker ZnO structure is fabricated with the increase of pH in solution. The enhanced UV emission in the PL measurement and the spectra in the Raman spectroscopy for ZnO–GaN heterojunction material were discussed. [reprint (PDF)]
15.	Terahertz emitters at Center for Quantum Devices: recent advances and future trends Manijeh Razeghi Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017705-- August 23, 2018 ...[Visit Journal] This paper reviews the recent advances and future trends of terahertz (THz) emitters at CQD/NU, highlights the high-performance THz sources based on intracavity nonlinear frequency generation in mid-infrared quantum cascade lasers. Significant performance improvements of our THz sources in the power, wall plug efficiency are achieved by systematic optimizing the device's active region, waveguide, and chip bonding strategy. High THz power up to 1.9 mW and 0.014 mW for pulsed mode and continuous wave operations at room temperature are demonstrated, respectively. Even higher power and efficiency are envisioned based on enhancements in outcoupling efficiency and mid-IR performance. Our compact THz device with high power and wide tuning range is highly suitable for the imaging, sensing, spectroscopy, medical diagnosis, and many other applications. [reprint (PDF)]
15.	Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure M. Razeghi, J.P. Duchemin M. Razeghi, J.P. Duchemin, Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure, Journal of Crystal Growth, Volume 64, Issue 1, 1983, Pages 76-82,-- November 1, 1983 ...[Visit Journal] M. Razeghi, J.P. Duchemin, Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure, Journal of Crystal Growth, Volume 64, Issue 1, 1983, Pages 76-82, [reprint (PDF)]
15.	High power, high wall-plug efficiency, high reliability, continuous-wave operation quantum cascade lasers at Center for Quantum Devices Razeghi, Manijeh SPIE Proceedings Volume 11296, Optical, Opto-Atomic, and Entanglement-Enhanced Precision Metrology II; 112961C-- February 25, 2020 ...[Visit Journal] Since the demonstration of the first quantum cascade laser (QCL) in 1997, QCLs have undergone considerable developments in output power, wall plug efficiency (WPE), beam quality, wavelength coverage and tunability. Among them, many world-class breakthroughs were achieved at the Center for Quantum Device at Northwestern University. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the QCL family on high power, high wall-plug efficiency (WPE), continuous-wave (CW) and room temperature operation lasers. [reprint (PDF)]
15.	Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel IEEE J Quantum Elect 35, 1041–1044 (1999)-- July 1, 1999 ...[Visit Journal] We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-mu m atmospheric window at 300 K, The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 mu m at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3 x 10(8) cm.Hz(1/2)/W at 11 mu m at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, tau = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration. [reprint (PDF)]
15.	EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2 M. Razeghi, B. Houlier and M. Yuste M. Razeghi et al. EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2, Solid State Communications, Vol. 26, pp. 665-668. -- January 26, 1978 ...[Visit Journal] The spin Hamiltonian parameters of Mn 2÷ have been measured above and below the transition point (180"C) of the lead phosphate. They show that Mn 2+ substitutes a Pbl ion. Between 175 and 180vC the principal axis OX of the fine tensor is parallel to the wave vector of the soft mode which condensates at the transition point. An exaltation of the linewidth is observed. The linewidth remains constant within 50C of Te; in this temperature range, the "static regime" is achieved, and the correlation time of the fluctuations is less than 10 -s sec. [reprint (PDF)]
15.	ZnO nanorod electrodes for hydrogen evolution and storage Harinipriya, S.; Usmani, B.; Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Lusson, A.; Bove, P.; Drouhin, H.-J.; Razeghi, M. Proc. SPIE 8263, Oxide-based Materials and Devices III, 82631Y (February 9, 2012)-- February 9, 2012 ...[Visit Journal] Due to the attractive combination of a relatively high specific heat of combustion with a large specific energy capacity, molecular hydrogen (H2) is being investigated for use as an alternative to fossil fuels. Energy-efficient H₂ production and safe storage remain key technical obstacles to implementation of an H₂ based economy, however. ZnO has been investigated for use as an alternative photocatalytic electrode to TiO₂ for solarpowered photo-electro-chemical (PEC) electrolysis, in which H₂ is generated by direct water splitting in a cell with a metal cathode and a semiconducting anode. In this investigation, ZnO NR grown on Si (100) substrates by pulsed laser deposition were investigated for use as electrodes in the Hydrogen Evolution Reaction (HER). The electrochemical potential and Fermi energy of the ZnO NR were estimated from the electrochemical current density in acid and alkaline solutions via phenomenological thermodynamic analysis. As well as acting as an effective electrocalytic cathode, the ZnO NR appear to operate as a hydrogen reservoir. These results indicate that the ZnO NR have excellent potential for the storage of evolved H₂. [reprint (PDF)]
15.	Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994 ...[Visit Journal] We report an analysis of the heteroepitaxial interfaces in high quality GaInP–GaAs superlattices grown simultaneously on GaAs and Si substrates by gas source molecular beam epitaxy. These two superlattices have been studied using high resolution x-ray diffraction measurements. Sharp superlattice satellites, with very little broadening, are observed within a 6° range for the sample on GaAs. Photoluminescence peaks with full widths at half-maximums of 5 and 7 meV are obtained at 4 K for samples with 58 Å wells on GaAs and Si, respectively. Room temperature exciton absorption is observed in the photovoltage measurements for a superlattice grown on Si substrate. The thicknesses determined by x-ray analysis are consistent with those obtained by a Kronig–Penny model fitting of the photovoltage spectroscopy. [reprint (PDF)]
15.	Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates J.J. Lee, J.D. Kim, and M. Razeghi Applied Physics Letters 73 (5)-- August 3, 1998 ...[Visit Journal] We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×10⁶ cm·Hz^½/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. [reprint (PDF)]
15.	The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, S. Bogdanov, P. Manukar, M. Razeghi, and V. Nathan SPIE Proceedings, San Jose, CA Volume 7222-15-- January 26, 2009 ...[Visit Journal] The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p+ - pi - M - N+ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M- structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M- superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo-response and reducing dark current for devices with cutoffs greater than 14.5 µm. [reprint (PDF)]
15.	Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices A. Haddadi, S. Adhikary, A. Dehzangi, and M. Razeghi Applied Physics Letters 109, 021107-- July 12, 2016 ...[Visit Journal] A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Near a wavelength of 4 μm saturated optical gains of 668 and 639 at 77 and 150 K, respectively, are demonstrated over a wide dynamic range. At 150 K, the unity optical gain collector dark current density and DC current gain are 1 × 10⁻³ A/cm² and 3710, respectively. This demonstrates the potential for use in high-speed applications. In addition, the phototransistor exhibits a specific detectivity value that is four times higher compared with a state-of-the-art type-II superlattice-based photodiode with a similar cut-off wavelength at 150 K. [reprint (PDF)]
15.	8-13 μm InAsSb heterojunction photodiode operating at near room temperature J.D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi Applied Physics Letters 67 (18)-- October 30, 1995 ...[Visit Journal] p⁺-InSb/π-InAs_1−xSb_x/n⁺-InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room‐temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≊0.85 sample. The voltage responsivity‐area product of 3×10⁻⁵ V· cm²/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≊1.5×10⁸ cm ·Hz^½/W. [reprint (PDF)]
15.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Applied Physics Letters, 82 (20)-- May 19, 2003 ...[Visit Journal] We report a very high average output power at room temperature for quantum-cascade lasers emitting at λ ~ 5.9 µm. For high-reflectivity-coated 2-mm-long cavities, a low threshold current density of 1.7 kA/cm² was obtained at room temperature. From 300 to 400 K, the characteristic temperature (T0) was 198 K. A maximum average output power of 0.67 W was achieved. In addition, 0.56 W average output power was observed at a duty cycle of 56%. [reprint (PDF)]
15.	Status of III-V semiconductor thin films and their applications to future OEICs Manijeh Razeghi Proc. SPIE 10267, Integrated Optics and Optoelectronics, 102670T -- June 26, 2017 ...[Visit Journal] In the last decade, semiconductor technology has been advanced to a great extent in terms of electronic and photonic discrete devices. One of the main reasons for such a progress, is the result of advancement in the epitaxial growth techniques such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), where device quality films can be grown with great control over composition, uniformity and thickness. MOCVD has proven to be one of the best growth methods for many IH-V semiconductor thin films 1. Its flexibility and potential to yield a broad range of growth rates resulted in the layers featuring the thicknesses from tens of microns down to several nanometers. Planar structures containing quantum wells with atomically flat interfaces, superlattices, strained or graded-index layers were successfully grown by MOCVD. Furthermore, MOCVD proved its efficiency in producing a laser devices by overgrowth and epitaxy on patterned substrates. The importance of MOCVD is strongly enhanced by the possibility of large-scale production by simultaneous growth on several substrates in one process. Several III-V semiconductor films with bandgaps ranging from infrared to ultraviolet (15 to 0.2 μm) have been successfully grown by MOCVD. [reprint (PDF)]
15.	Aluminum free GaInP/GaAs Quantum Well Infrared Photodetectors for Long Wavelength Detection C. Jelen, S. Slivken, J. Hoff, M. Razeghi, and G. Brown Applied Physics Letters 70 (3)-- January 20, 1997 ...[Visit Journal] We demonstrate quantum well infrared photodetectors based on a GaAs/Ga_0.51In_0.49P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples. [reprint (PDF)]
15.	Continuous-wave operation of λ ~ 4.8 µm quantum-cascade lasers at room temperature A. Evans, J.S. Yu, S. Slivken, and M. Razeghi Applied Physics Letters, 85 (12)-- September 20, 2004 ...[Visit Journal] Continuous-wave (cw) operation of quantum-cascade lasers emitting at λ~4.8 µm is reported up to a temperature of 323 K. Accurate control of layer thickness and strain-balanced material composition is demonstrated using x-ray diffraction. cw output power is reported to be in excess of 370 mW per facet at 293 K, and 38 mW per facet at 323 K. Room-temperature average power measurements are demonstrated with over 600 mW per facet at 50% duty cycle with over 300 mW still observed at 100% (cw) duty cycle. [reprint (PDF)]
15.	Type II superlattice infrared detectors and focal plane arrays Vaidya Nathan; Manijeh Razeghi Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654209 (May 14, 2007)-- May 14, 2007 ...[Visit Journal] Type II superlattce photodetectors have recently experienced significant improvements in both theoretical structure design and experimental realization. Empirical Tight Binding Method is initiated and developed for Type II superlattice. Growth characteristics such as group V segregation and incorporation phenomena are taken into account in the model and shown higher precision. A new Type II structure, called M-structure, is introduced and theoretically demonstrated high R₀A, high quantum efficiency. Device design is optimized to improve the performance. As a result, 55% quantum efficiency and 10 Ohm·cm² R₀A are achieved for an 11.7 μm cut-off photodetector at 77K. FPA imaging at longwavelength is demonstrated with a capability of imaging up to 171K. At 81K, the noise equivalent temperature difference presented a peak at 0.33K. [reprint (PDF)]
15.	Injector doping level dependent continuous-wave operation of InP-based QCLs at λ~ 7.3 µm above room temperature J.S. Yu, S. Slivken, and M. Razeghi Semiconductor Science and Technology (SST), Vol. 25, No. 12, p. 125015-- December 1, 2010 ...[Visit Journal] We report the continuous-wave (CW) operation of InGaAs/InAlAs quantum cascade lasers (QCLs) operating at λ ~ 7.3 µm above room temperature. The injector doping level–dependent CW characteristics above room temperature are investigated for doping densities between 7 × 10¹⁶ cm⁻³ and 2 × 10¹⁷ cm⁻³. The device performance, i.e. threshold current density, output power, operating temperature and characteristic temperature, depends strongly on the injector doping density. For a relatively low injector doping density of 7 × 10¹⁶ cm⁻³, a high-reflectivity-coated 10 µm wide and 4 mm long laser exhibits an improved device performance with an output power of 152 mW and a threshold current density of 1.37 kA cm⁻² at 298 K under CW mode, operating up to 343 K. The thermal characteristics are also analyzed by the estimation from the experimentally measured data for the QCLs with different injector doping densities. [reprint (PDF)]
15.	Self-Detecting Mid-Infrared Dual-Comb Spectroscopy Based on High-Speed Injection-Locked Quantum Cascade Lasers Yu Ma, Dapeng Wu, Ruixin Huang, Shichen Zhang, Binru Zhou, Zejun Ma, Yongqiang Sun, Junqi Liu, Ning Zhuo, Jinchuan Zhang, Shenqiang Zhai, Shuman Liu, Fengqi Liu, Manijeh Razeghi, and Quanyong Lu Adv. Photonics Res. 2500062 (2025) ...[Visit Journal] Dual-comb spectrometer based on quantum cascade lasers (QCLs) is gaining fast development and revolutionizing the precision measurement with high-frequency and temporal resolutions. In these measurements, high-bandwidth photodetectors are normally used for signal acquisition and processing, which complicates the measurement system. QCL is well-known for its picosecond gain-recovery time with an intrinsic bandwidth of tens of GHz. In this work, a compact self-detecting dual-comb spectroscopy (DCS) is demonstrated based on dispersion-engineered, high-speed packaged QCLs under coherent injection locking. The laser source is designed and fabricated into a hybrid-monolithic-integrated waveguide and epi-down packaged on a wideband-designed submount to fully explore the high-speed feature up to fourth-order harmonic state with a cutoff frequency of 40 GHz. The effective radio frequency (RF) injection locking diminishes the issue of optical feedback and enables high-bandwidth self-detection based on QCLs. Clear and stable multiheterodyne signal corresponding to a spectral range of 68 cm−1 and narrow comb tooth linewidth of ≈10 kHz is observed without using external detector or numerical process. The demonstrated broadband, high-power, self-detecting mid-infrared QCL DCS has a great potential for future applications of molecular sensing and spectroscopy. [reprint (PDF)]
15.	Electrically pumped photonic crystal distributed feedback quantum cascade lasers Y. Bai, P. Sung, S.R. Darvish, W. Zhang, A. Evans, S. Slivken, and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000A-1-8.-- February 1, 2008 ...[Visit Journal] We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback (PCDFB) quantum cascade lasers emitting at ~ 4.75 µm. Ridge waveguides of 50 µm and 100 µm width were fabricated with both PCDFB and Fabry-Perot feedback mechanisms. The Fabry-Perot device has a broad emitting spectrum and a broad far-field character. The PCDFB devices have primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half-maximum of 4.8 degrees and 2.4 degrees for the 50 µm and 100 µm ridge widths, respectively. [reprint (PDF)]
15.	Electron capture processes in optically excited In0.53Ga 0.47As/InP quantum wells U. Cebulla, G. Bacher, A. Forchel, D. Schmitz, H. Jürgensen, M. Razeghi Appl. Phys. Lett. 55, 933–935 (1989)-- September 4, 1989* ...[Visit Journal] We have performed picosecond time-resolved measurements on Ir:.O. 53 GaO. 47 As/lnP quantum wells with varying barrier thicknesses using 10 ps Nd:Y AG excitation. For this excitation, holes and electrons are created in the Ino . 53 GaOA7 As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the harrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation. [reprint (PDF)]
15.	Single-mode, high-power, midinfrared, quantum cascade laser phased arrays Wenjia Zhou , Donghai Wu , Quan-Yong Lu, Steven Slivken & Manijeh Razeghi Scientific Reports 8:14866-- October 5, 2018 ...[Visit Journal] We demonstrate single-mode, 16-channel, optical phased arrays based on quantum cascade laser technology, with emission wavelengths around 4.8 μm. The integrated device consists of a distributed feedback seed section, a highly-efficient tree array multi-mode interferometer power splitter, and a 16-channel amplifier array with a 4° angled facet termination. With a single layer Y₂O₃ coating, the angled facet reflectivity is estimated to be less than 0.1% for suppressing amplifier self-lasing. A peak output power of 30 W is achieved with an emission spectrum narrower than 11 nm and a side mode suppression ratio over 25 dB. Far field distribution measurement result indicates a uniform phase distribution across the array output. Using the same phased array architecture, we also demonstrate single-mode 3.8 μm QCL amplifier arrays with up to 20 W output power. [reprint (PDF)]
15.	Room‐temperature excitons in Ga0.47In0.53As‐InP superlattices grown by low‐pressure metalorganic chemical vapor deposition M. Razeghi; J. Nagle; P. Maurel; F. Omnes; J. P. Pocholle Appl. Phys. Lett. 49, 1110–1111 (1986)-- October 27, 1986 ...[Visit Journal] Very high quality Gao.47 InO. 53 As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and wen-resolved exciton peaks in the luminescence and excitation spectra of GalnAs-lnP quantum wells. Optical absorption spectra show room-temperature excitons in GalnAs· InP superlattices. [reprint (PDF)]
15.	Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs_1−xSb_x type-II superlattices A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi Applied Physics Letters 106 , 011104-- January 8, 2015 ...[Visit Journal] A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs_1−xSb_x type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10⁻⁷ A/cm² under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 10¹² cm·Hz^½·W^-1 at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10⁻⁴ A/cm² under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 10¹¹ cm·Hz^½·W^-1. [reprint (PDF)]
15.	Negative and positive luminescence in mid-wavelength infrared InAs/GaSb superlattice photodiodes D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi IEEE Journal of Quantum Electronics, 41 (12)-- December 1, 2005 ...[Visit Journal] The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination. [reprint (PDF)]

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