Center for Quantum Devices - Most Downloaded Journal Articles

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2.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Applied Physics Letters, 82 (20)-- May 19, 2003 ...[Visit Journal] We report a very high average output power at room temperature for quantum-cascade lasers emitting at λ ~ 5.9 µm. For high-reflectivity-coated 2-mm-long cavities, a low threshold current density of 1.7 kA/cm² was obtained at room temperature. From 300 to 400 K, the characteristic temperature (T0) was 198 K. A maximum average output power of 0.67 W was achieved. In addition, 0.56 W average output power was observed at a duty cycle of 56%. [reprint (PDF)]
2.	Monolithic, steerable, mid-infrared laser realized with no moving parts Slivken S, Wu D, Razeghi M Scientific Reports 7, 8472 -- May 24, 2018 ...[Visit Journal] The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function. [reprint (PDF)]
2.	Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors Ryan McClintock ; Manijeh Razeghi Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550U-- August 28, 2015 ...[Visit Journal] AlGaN, with its tunable wide-bandgap is a good choice for the realization of ultraviolet photodetectors. AlGaN films tend to be grown on foreign substrates such as sapphire, which is the most common choice for back-illuminated devices. However, even ultraviolet opaque substrates like silicon holds promise because, silicon can be removed by chemical treatment to allow back-illumination,1 and it is a very low-cost substrate which is available in large diameters up to 300 mm. However, Implementation of silicon as the solar-blind PD substrates requires overcoming the lattice-mismatch (17%) with the AlxGa1-xN that leads to high density of dislocation and crack-initiating stress. In this talk, we report the growth of thick crack-free AlGaN films on (111) silicon substrates through the use of a substrate patterning and mask-less selective area regrowth. This technique is critical as it decouples the epilayers and the substrate and allows for crack-free growth; however, the masking also helps to reduce the dislocation density by inclining the growth direction and encouraging dislocations to annihilate. A back-illuminated p-i-n PD structure is subsequently grown on this high quality template layer. After processing and hybridizing the device we use a chemical process to selectively remove the silicon substrate. This removal has minimal effect on the device, but it removes the UV-opaque silicon and allows back-illumination of the photodetector. We report our latest results of back-illuminated solar-blind photodetectors growth on silicon. [reprint (PDF)]
2.	High power quantum cascade lasers M. Razeghi, S. Slivken, Y. Bai, B. Gokden, and S.R. Darvish New Journal of Physics (NJP), Volume 11, p. 125017-- December 1, 2009 ...[Visit Journal] We report the most recent state-of-art quantum cascade laser results at wavelengths around 4.8 and 10 μm. At 4.8 μm, a room temperature wall plug efficiency (WPE) of 22 and 15.5% are obtained in pulsed mode and continuous wave (cw) mode, respectively. Room temperature cw output power reaches 3.4 W. The same laser design is able to reach a WPE of 36% at 120 K in pulsed mode. At 10 μm, room temperature average power of 2.2 W and cw power of 0.62 W are obtained. We also explore lasers utilizing the photonic crystal distributed feedback mechanism, and we demonstrate up to 12 W peak power operation at three different wavelengths around 4.7 μm with a waveguide width of 100 μm and diffraction limited beam quality. [reprint (PDF)]
2.	GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio P. Kung, X. Zhang, D. Walker, A. Saxler, and M. Razeghi SPIE Conference, San Jose, CA, -- January 28, 1998 ...[Visit Journal] UV photodetectors are critical components in many applications, including UV astronomy, flame sensors, early missile threat warning and space-to-space communications. Because of the presence of strong IR radiation in these situations, the photodetectors have to be solar blind, i.e. able to detect UV radiation while not being sensitive to IR. Al_xGa_1-xN is a promising material system for such devices. Al_xGa_1-xN materials are wide bandgap semiconductors, with a direct bandgap whose corresponding wavelength can be continuously tuned from 200 to 365 nm. Al_xGa_1-xN materials are thus insensitive to visible and IR radiation whose wavelengths are higher than 365 nm. We have already reported the fabrication and characterization of Al_xGa_1-xN-based photoconductors with a cut-off wavelength tunable from 200 to 365 nm by adjusting the ternary alloy composition. Here, we present the growth and characterization of GaN p-i- n photodiodes which exhibit a visible-to-UV rejection ratio of 6 orders or magnitude. The thin films were grown by low pressure metalorganic chemical vapor deposition. Square mesa structures were fabricated using dry etching, followed by contact metallization. The spectral response, rejection ratio and transient response of these photodiodes is reported. [reprint (PDF)]
2.	LEO of III-Nitride on Al₂O₃ and Si Substrates M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously. [reprint (PDF)]
2.	High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector S. Tsao, H. Lim, W. Zhang, and M. Razeghi Virtual Journal of Nanoscale Science and Technology-- May 28, 2007 ...[Visit Journal][reprint (PDF)]
2.	Crack-free AlGaN for solar-blind focal plane arrays through reduced area expitaxy E. Cicek, R. McClintock, Z. Vashaei, Y. Zhang, S. Gautier, C.Y. Cho and M. Razeghi Applied Physics Letters, Vol. 102, No. 05, p. 051102-1-- February 4, 2013 ...[Visit Journal] We report on crack reduction for solar-blind ultraviolet detectors via the use of a reduced area epitaxy (RAE) method to regrow on patterned AlN templates. With the RAE method, a pre-deposited AlN template is patterned into isolated mesas in order to reduce the formation of cracks in the subsequently grown high Al-content Al_xGa_1−xN structure. By restricting the lateral dimensions of the epitaxial growth area, the biaxial strain is relaxed by the edges of the patterned squares, which resulted in ∼97% of the pixels being crack-free. After successful implementation of RAE method, we studied the optical characteristics, the external quantum efficiency, and responsivity of average pixel-sized detectors of the patterned sample increased from 38% and 86.2 mA/W to 57% and 129.4 mA/W, respectively, as the reverse bias is increased from 0 V to 5 V. Finally, we discussed the possibility of extending this approach for focal plane array, where crack-free large area material is necessary for high quality imaging. [reprint (PDF)]
2.	High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices M. Razeghi; A. Haddadi; A.M. Hoang; G. Chen; S. Ramezani-Darvish; P. Bijjam Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040S (June 11, 2013)-- June 11, 2013 ...[Visit Journal] We report a bias selectable dual-band mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 μm active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR band. Under back-side illumination, a temperature evolution study of the MWIR detector's electro-optical performance found the 300 K background-limit with 2π field-of-view to be achieved below operating temperatures of 160 K, at which the temperature's 50% cutoff wavelength was 5.2 μm. The measured current reached the system limit of 0.1 pA at 110 K for 30 μm pixel-sized diodes. At 77 K, where the LWIR channel operated with a 50% cutoff wavelength at 11.2 μm, an LWIR selectivity of ∼17% was achieved in the MWIR wave band between 3 and 4.7 μm, making the detector highly selective. [reprint (PDF)]
2.	Solar-blind avalanche photodiodes R. McClintock, K. Minder, A. Yasan, C. Bayram, F. Fuchs, P. Kung and M. Razeghi SPIE Conference, San Jose, CA, Vol. 6127, pp. 61271D-- January 23, 2006 ...[Visit Journal] There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs). In this paper, APDs operating at 280 nm, within the solar-blind region of the ultraviolet spectrum, are investigated. [reprint (PDF)]
2.	The Molecular Beam Epitaxial Growth of InSb on (111) GaAs E. Michel, J. Kim, J. Xu, S. Javadpour, I. Ferguson, and M. Razeghi Applied Physics Letters 69 (2)-- July 8, 1996 ...[Visit Journal] The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb. [reprint (PDF)]
2.	High operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi and B.M. Nguyen SPIE Proceedings, Infrared Technology and Applications XXXVII, Orlando, FL, Vol. 8012, p. 80122Q-1-- April 26, 2011 ...[Visit Journal] Recent efforts have been paid to elevate the operating temperature of Type II superlattice Mid Infrared photon detectors. Using M-structure superlattice, novel device architectures have been developed, resulting in significant improvement of the device performances. In this paper, we will compare different photodetector architectures and discuss the optimization scheme which leads to almost one order of magnitude of improvement to the electrical performance. At 150K, single element detectors exhibit a quantum efficiency above 50%, and a specific detectivity of 1.05x10(12) cm.Hz(1/2)/W. BLIP operation with a 300K background and 2π FOV can be reached with an operating temperature up to 180K. High quality focal plane arrays were demonstrated with a noise equivalent temperature difference (NEDT) of 11mK up to 120K. Human body imaging is achieved at 150K with NEDT of 150mK. [reprint (PDF)]
2.	Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi SPIE Conference, San Jose, CA, Vol. 6127, pp. 61270K-- January 23, 2006 ...[Visit Journal] GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. [reprint (PDF)]
2.	Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance C. Bayram, D.K. Sadana, Z. Vashaei and M. Razeghi SPIE Proceedings, Vol. 8268, p. 826827-- January 22, 2012 ...[Visit Journal] negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility and thermal stability; making them ideal for high power high frequency RTDs. Moreover, larger conduction band discontinuity promise higher NDR than other materials (such as GaAs) and room-temperature operation. However, earlier efforts on GaN-based RTD structures have failed to achieve a reliable and reproducible NDR. Recently, we have demonstrated for the first time that minimizing dislocation density and eliminating the piezoelectric fields enable reliable and reproducible NDR in GaN-based RTDs even at room temperature. Observation of NDR under both forward and reverse bias as well as at room and low temperatures attribute the NDR behaviour to quantum tunneling. This demonstration marks an important milestone in exploring III-nitride quantum devices, and will pave the way towards fundamental quantum transport studies as well as for high frequency optoelectronic devices such as terahertz emitters based on oscillators and cascading structures. [reprint (PDF)]
2.	Low-threshold and high power (~9.0 μm) quantum cascade lasers operating at room temperature A. Matlis, S. Slivken, A. Tahraoui, K.J. Luo, J. Diaz, Z. Wu, A. Rybaltowski, C. Jelen, and M. Razeghi Applied Physics Letters 77 (12)-- September 18, 2000 ...[Visit Journal] We report a low threshold current density and high power for λ ∼ 9 μm AlInAs/GaInAs quantum cascade lasers operating at room temperature. The threshold current density is 1.95 kA/cm² at 300 K and 0.61 kA/cm² at 80 K for 5 μs pulses at 200 Hz repetition rate. The peak output power is 700 mW at room temperature and 1.3 W at 80 K per two facets for cavity length is 3 mm with a stripe width of 20 μm. The characteristic temperature T₀ is 185 °C. The slope efficiency is 450 and 800 mW/A at 300 and 80 K, respectively. In continuous wave operation, the output power is more than 150 mW at 80 K and 25 mW at 140 K. This high performance was achieved by improving the material growth and processing technology. [reprint (PDF)]
2.	III-Nitride photon counting avalanche photodiodes R. McClintock, J.L. Pau, K. Minder, C. Bayram and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000N-1-11.-- February 1, 2008 ...[Visit Journal] In order for solar and visible blind III-Nitride based photodetectors to effectively compete with the detective performance of PMT there is a need to develop photodetectors that take advantage of low noise avalanche gain. Furthermore, in certain applications, it is desirable to obtain UV photon counting performance. In this paper, we review the characteristics of III-nitride visible-blind avalanche photodetectors (APDs), and present the state-of-the-art results on photon counting based on the Geiger mode operation of GaN APDs. The devices are fabricated on transparent AlN templates specifically for back-illumination in order to enhance hole-initiated multiplication. The spectral response and Geiger-mode photon counting performance are analyzed under low photon fluxes, with single photon detection capabilities being demonstrated in smaller devices. Other major technical issues associated with the realization of high-quality visible-blind APDs and Geiger mode APDs are also discussed in detail and solutions to the major problems are described where available. Finally, future prospects for improving upon the performance of these devices are outlined. [reprint (PDF)]
2.	High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier S. Slivken, S. Sengupta, and M. Razeghi Applied Physics Letters 107, 251101-- December 21, 2015 ...[Visit Journal] Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm⁻¹) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm⁻¹) and a maximum continuous power of 1.25 W. The output beam is shown to be nearly diffraction-limited, even at high amplifier current. [reprint (PDF)]
2.	High performance quantum dot-quantum well infrared focal plane arrays S. Tsao, A. Myzaferi, and M. Razeghi SPIE Proceedings, San Francisco, CA (January 22-28, 2010), Vol. 7605, p. 76050J-1-- January 27, 2010 ...[Visit Journal] Quantum dot (QD) devices are a promising technology for high operating temperature detectors. We have studied InAs QDs embedded in an InGaAs/InAlAs quantum well structure on InP substrate for middle wavelength infrared detectors and focal plane arrays (FPAs). This combined dot-well structure has weak dot confinement of carriers, and as a result, the device behavior differs significantly from that in more common dot systems with stronger confinement. We report on our studies of the energy levels in the QDWIP devices and on QD-based detectors operating at high temperature with D* over 10¹⁰ cm·Hz^½/W at 150 K operating temperature and high quantum efficiency over 50%. FPAs have been demonstrated operating at up to 200 K. We also studied two methods of adapting the QDWIP device to better accommodate FPA readout circuit limitations. [reprint (PDF)]
2.	A review of the growth, doping, and applications of β-Ga₂O₃ thin films Manijeh Razeghi, Ji-Hyeon Park , Ryan McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak P. Dravid Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330R -- March 14, 2018 ...[Visit Journal] β-Ga₂O₃ is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ~4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga₂O₃ thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga₂O₃ devices to penetrate the market in real-world applications are also considered, along with paths for future work. [reprint (PDF)]
2.	GaN nanostructured p-i-n photodiodes J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi Applied Physics Letters, Vol. 93, No. 22, p. 221104-1-- December 1, 2008 ...[Visit Journal] We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 µm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at −5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars. [reprint (PDF)]
2.	Non-equilibrium radiation of long wavelength InAs/GaSb superlattice photodiodes D. Hoffman, A. Hood, F. Fuchs and M. Razeghi Journal of Applied Physics 99-- February 15, 2006 ...[Visit Journal] The emission behavior of binary-binary type-II InAs/GaSb superlattice photodiodes has been studied in the spectral range between 8 and 13 μm. With a radiometric calibration of the experimental setup the internal and external quantum efficiencies have been determined in the temperature range between 80 and 300 K for both the negative and positive luminescences. [reprint (PDF)]
2.	High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices P. Manurkar, S.R. Darvish, B.M. Nguyen, M. Razeghi and J. Hubbs Applied Physics Letters, Vol. 97, No 19, p. 193505-1-- November 8, 2010 ...[Visit Journal] A large format 1k × 1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3×10⁻⁴ A·cm⁻² and differential resistance-area product at zero bias R₀A of 166 Ω·cm² at 81 K, and 5.1×10⁻⁵ A·cm⁻² and 1286 Ω·cm², respectively, at 68 K. The quantum efficiency obtained is 78%. [reprint (PDF)]
2.	Phase-locked, high power, mid-infrared quantum cascade laser array W. Zhou, S. Slivken, and M. Razeghi Applied Physics Letters 112, 181106-- May 4, 2018 ...[Visit Journal] We demonstrate phase-locked, high power quantum cascade laser arrays, which are combined using a monolithic, tree array multimode interferometer, with emission wavelengths around 4.8 μm. A maximum output power of 15 W was achieved from an eight-element laser array, which has only a slightly higher threshold current density and a similar slope efficiency compared to a Fabry-Perot laser of the same length. Calculated multimode interferometer splitting loss is on the order of 0.27 dB for the in-phase supermode. In-phase supermode operation with nearly ideal behavior is demonstrated over the working current range of the array. [reprint (PDF)]
2.	Overview of Quantum Cascade Laser Research at the Center for Quantum Devices S. Slivken, A. Evans, J. Nguyen, Y. Bai, P. Sung, S.R. Darvish, W. Zhang and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000B-1-8.-- February 1, 2008 ...[Visit Journal] Over the past several years, our group has endeavored to develop high power quantum cascade lasers for a variety of remote and high sensitivity infrared applications. The systematic optimization of laser performance has allowed for demonstration of high power, continuous-wave quantum cascade lasers operating above room temperature. In the past year alone, the efficiency and power of our short wavelength lasers (~4.8 µm) has doubled. In continuous wave at room temperature, we have now separately demonstrated ~10% wallplug efficiency and ~700 mW of output power. Up to now, we have been able to show that room temperature continuous wave operation with > 100 mW output power in the 3.8 < λ < 11.5 µm wavelength range is possible. [reprint (PDF)]
2.	Recent advances in high power mid- and far-wavelength infrared lasers for free space communication S. Slivken and M. Razeghi SPIE Optics East Conference, October 1-4, 2006, Boston, MA Proceedings – Active and Passive Optical Components for Communications VI, Vol. 6389, p. 63890S-1-- October 4, 2006 ...[Visit Journal] Link reliability is a significant issue for free space optical links. Inclement weather, such as fog, can seriously reduce the transmission of light through the atmosphere. However, this effect, for some types of fog, is wavelength-dependent. In order to improve link availability in both metro and hostile environments, mid- and far-wavelength infrared diode lasers can be of use. This paper will discuss some of the recent advances in high-power, uncooled quantum cascade lasers and their potential for use in long range and/or highly reliable free space communication links. [reprint (PDF)]

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