Center for Quantum Devices - Most Downloaded Journal Articles

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66.	Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor Arash Dehzangi, Ryan McClintock, Abbas Haddadi, Donghai Wu, Romain Chevallier, Manijeh Razeghi Scientific Reports volume 9, Article number: 5003 -- March 21, 2019 ...[Visit Journal] Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10⁻⁴ A/cm² under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 10¹⁰ cm·Hz^½W^-1. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10⁻¹⁰ A/cm² and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 10¹³ cm·Hz^½/W [reprint (PDF)]
63.	Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice Arash Dehzangi, Jiakai Li and Manijeh Razeghi Light: Science & Applications volume 10, Article number: 17 (2021) https://doi.org/10.1038/s41377-020-00453-x ...[Visit Journal] The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10−7 A/cm2. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 1013 cm Hz1/2/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach. [reprint (PDF)]
59.	Background–limited long wavelength infrared InAs/InAsSb type-II superlattice-based photodetectors operating at 110 K Abbas Haddadi, Arash Dehzangi, Sourav Adhikary, Romain Chevallier, and Manijeh Razeghi APL Materials 5, 035502 -- February 13, 2017 ...[Visit Journal] We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μm at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω·cm² and a dark current density of 8 × 10⁻⁵ A/cm², under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 10¹¹ Jones and a background–limited operating temperature of 110 K. [reprint (PDF)]
56.	nBn extended short-wavelength infrared focal plane array ARASH DEHZANGI, ABBAS HADDADI, ROMAIN CHEVALLIER, YIYUN ZHANG, AND MANIJEH RAZEGHI Optics Letters Vol. 43, Issue 3, pp. 591-594-- February 1, 2018 ...[Visit Journal] An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAs_0.10Sb_0.90∕GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities. A new bi-layer etch-stop scheme using a combination of InAs_0.91Sb_0.09 bulk and AlAs_0.1Sb_0.9∕GaSb superlattice layers was introduced to allow complete substrate removal and a shorter wavelength cut-on. Test pixels exhibit 100% cutoff wavelengths of ∼2.30 and ∼2.48 μm at 150 and 300 K, respectively. The devices achieve saturated quantum efficiency values of 59.7% and 63.8% at 150 and 300 K, respectively, under backside illumination and without any antireflection coating.At 150 K, photodetectors exhibit dark current density of 8.75 × 10⁻⁸ A∕cm² under −400 mV applied bias, providing specific detectivity of 2.82 × 10¹² cm · Hz^1∕2∕W at 1.78 μm. At 300 K, the dark current density reaches 4.75 × 10⁻² A∕cm² under −200 mV bias, providing a specific detectivity of 8.55 × 10⁹ cm · Hz^1∕2∕W 1.78 μm. [reprint (PDF)]
41.	Unleashing light: a deep dive into quantum cascade laser dynamics through power, precision, and performance Xiaohan Yu, Yanbo Bai, Feihu Wang, Steve Slivken, Nirajman Shrestha, Ruiming Zhang, Nil Ozcevik, Manijeh Razeghi Proc. SPIE 13908, Quantum Sensing and Nano Electronics and Photonics XXII, 139080U (20 March 2026); https://doi.org/10.1117/12.3082051 ...[Visit Journal] In this study, we explore the complex interplay of structural design and performance metrics in InGaAs/InAlAs/InP ridge waveguide quantum cascade lasers (QCLs) by combining theoretical modeling with rigorous experimental validation. By assuming mirror loss corresponding to a facet reflectivity of R = 0.275, which represents the Fresnel reflectance of uncoated InP facets, we investigated the impact of cavity length on threshold current density and slope efficiency by analyzing Power–Current–Voltage (PIV) characteristics of uncoated QCLs with lengths of 3mm, 4mm, and 5mm. Slope efficiencies were extracted and corrected for single-facet detection. By leveraging fitting techniques across multiple datasets and laser structure, we quantified internal and external quantum efficiencies and determined the transparency current density using graphical and analytical methods. A linear regression of inverse external efficiency versus inverse mirror loss enabled estimation of the internal quantum efficiency, highlighting the direct influence of fabrication parameters on laser output. With a linear fit of threshold current density versus mirror loss, the transparency current density was calculated. This work not only reinforces foundational laser physics principles but also provides a hands-on methodology for analyzing active device parameters with practical implications in tunable mid-infrared sources, spectroscopy, and optical sensing. [reprint (PDF)]
35.	Quantum Light: Unlocking the Invisible and Transforming the Possible M. Razeghi Journal of the Franklin Institute, 108997 (2026) ...[Visit Journal] Manijeh Razeghi explores the future of quantum photonics in the article. Drawing on her work engineering and detecting light across wavelengths from deep ultraviolet to terahertz, Razeghi describes how advances in quantum light could open new possibilities in public health, sensing, high-speed communication, energy and exploration. [reprint (PDF)]
32.	High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate Yoann Robin, Kai Ding, Ilkay Demir, Ryan McClintock, Sezai Elagoz, Manijeh Razeghi Materials Science in Semiconductor Processing 90, pp. 87–91-- November 5, 2018 ...[Visit Journal] We report on the fabrication of high brightness AlGaN-based ultraviolet light emitting diodes (UV-LED) on patterned silicon. Using the lateral epitaxial overgrowth approach, we demonstrate the growth of a 6 μm thick AlN layer of high crystalline quality. X-ray diffraction characterization showed a rocking curve with a full width at half maximum of 553 and 768″ for the (00.2) and (10.2) planes, respectively. The low dislocation density of the AlN template enabled the growth of bright AlGaN/ GaN quantum wells emitting at 336 nm. By appropriate flip-chip bonding and silicon substrate removal processing steps, the patterned AlN surface was exposed and efficient bottom-emission UV-LEDs were realized. Improvement of the AlN quality and the structure design allowed the optical output power to reach the milliwatt range under pulsed current, exceeding the previously reported maximum efficiency. Further investigations of the optical power at different pulsed currents and duty cycles show that thermal management in this device structure is still challenging, especially in continuous wave mode operation. The strategy presented here is of interest, since AlN crystalline quality improvement and optimization of the light extraction are the main issues inhibiting efficient UV emitter on silicon fabrication. [reprint (PDF)]
32.	Solar blind GaN p-i-n photodiodes D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi Applied Physics Letters 72 (25)-- June 22, 1998 ...[Visit Journal] We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 10¹¹ Ω. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit. [reprint (PDF)]
31.	Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) C. Bayram, J. Ott, K. T. Shiu, C. W. Cheng, Y. Zhu, J. Kim, D. K. Sadana, M. Razeghi Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93702F -- February 8, 2015 ...[Visit Journal] This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contributing to the “droop” behavior – a phenomenon defined as “the reduction in emitter efficiency as injection current increases”. The elimination of piezoelectric fields in GaN-based emitters as proposed in this work provide the potential for achieving a 100% internal efficiency and might lead to droopfree light emitting diodes. In addition, this work demonstrates co-integration of GaN emitters on cheap and scalable CMOS-compatible Si (100) substrate, which yields possibility of realizing a GaN laser diode uniquely – via forming mirrors along the naturally occurring cubic phase GaN-Si(100) cleavage planes. [reprint (PDF)]
31.	Advances in mid-infrared detection and imaging: a key issues review Manijeh Razeghi and Binh-Minh Nguyen Rep. Prog. Phys. 77 (2014) 082401-- August 4, 2014 ...[Visit Journal] It has been over 200 years since people recognized the presence of infrared radiation, and developed methods to capture this signal. However, current material systems and technologies for infrared detections have not met the increasing demand for high performance infrared detectors/cameras, with each system having intrinsic drawbacks. Type-II InAs/GaSb superlattice has been recently considered as a promising candidate for the next generation of infrared detection and imaging. Type-II superlattice is a man-made crystal structure, consisting of multiple quantum wells placed next to each other in a controlled way such that adjacent quantum wells can interact. The interaction between multiple quantum wells offers an additional degree of freedom in tailoring the material's properties. Another advantage of type-II superlattice is the experimental benefit of inheriting previous research on material synthesis and device fabrication of bulk semiconductors. It is the combination of these two unique strengths of type-II superlattice—novel physics and easy manipulation—that has enabled unprecedented progress in recent years. In this review, we will describe historical development, and current status of type-II InAs/GaSb superlattice for advanced detection and imaging in the mid-infrared regime (λ = 3–5 µm). [reprint (PDF)]
31.	A lifetime of contributions to the world of semiconductors using the Czochralski invention M. Razeghi Vacuum Vol. 9934, 993406-1-- February 8, 2017 ...[Visit Journal] Over the course of my career, I have made numerous contributions related to semiconductor crystal growth and high performance optoelectronics over a vast region of the electromagnetic spectrum (ultraviolet to terahertz). In 2016 this cumulated in my receiving the Jan Czochralski Gold Medal award from the European Materials Research Society. This article is designed to provide a historical perspective and general overview of these scientific achievements, on the occasion of being honored by this award. These achievements would not have been possible without high quality crystalline substrates, and this article is written in honor of Jan Czochralski on the 100th anniversary of his important discovery. [reprint (PDF)]
30.	High-performance, continuous-wave quantum-cascade lasers operating up to 85° C at λ ~ 8.8 μm J.S. Yu, S. Slivken, A. Evans, and M. Razeghi Applied Physics A: Materials Science & Processing, Vo. 93, No. 2, p. 405-408-- November 1, 2008 ...[Visit Journal] High-temperature, high-power, and continuous-wave (CW) operation of quantum-cascade lasers with 35 active/injector stages at λ∼8.85 μm above room temperature is achieved without using a buried heterostructure. At this long wavelength, the use of a wider ridge waveguide in an epilayer-down bonding scheme leads to a superior performance of the laser. For a high-reflectivity-coated 21 μm×3 mm laser, the output power of 237 mW and the threshold current density of 1.44 kA·cm^-2 at 298 K under CW mode are obtained with a maximum wall-plug efficiency of 1.7%. Further improvements were observed by using a 4-mm-long cavity. The device exhibits 294 mW of output power at 298 K and it operates at a high temperature, even up to 358 K (85°C). The full widths at half-maximum of the laser beam in CW operation for the parallel and the perpendicular far-field patterns are 25°and 63°, respectively. [reprint (PDF)]
30.	-- November 30, 1999
30.	Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors G. Chen, E.K. Huang, A.M. Hoang, S. Bogdanov, S.R. Darvish, and M. Razeghi Applied Physics Letters, Vol. 101, No. 21, p. 213501-1-- November 19, 2012 ...[Visit Journal] By using gating technique, surface leakage generated by SiO₂ passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO₂ passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω·cm² differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11 μm 50% cut-off gated photodiode has a specific detectivity of 7 × 10¹¹ Jones, and the detectivity stays above 2 × 10¹¹ Jones from 0 to −500 mV operation bias. [reprint (PDF)]
29.	Room Temperature Epitaxy of Ni1−xMgxO on c Plane Sapphire by Plasma Assisted Pulsed Laser Deposition David J. Rogers, Eric V. Sandana, Ferechteh H. Teherani, M. Razeghi physica status solidi (b) 2026, 263 (7), e202500648. ...[Visit Journal] This paper reports on room-temperature (RT) epitaxial growth of NiO and Ni1-xMgxO (x ≈ 0.50) thin films on c-plane sapphire (0001) using plasma-assisted pulsed laser deposition. Optical transmission reveals absorption edges at ~3.6 eV (NiO) and ~4.4 eV (Ni0.5Mg0.50O), confirming bandgap engineering via Mg incorporation consistent with prior alloy data. X-ray reflectivity (XRR) indicates smooth surfaces and thicknesses of ~60 nm (NiO) and ~65 nm (Ni0.5Mg0.50O). High-resolution X-ray diffraction 2θ/ω scans indicate fcc (111) orientation for both films; ω-rocking curves exhibit full width half maxima of 0.07°—remarkably low mosaic spread for RT-grown oxides. (002) pole figures display six-fold symmetry, evidencing epitaxial relationships featuring two rotational domains (±60°) about [111] on c-sapphire. AFM (1 µm × 1 µm) yields root mean square roughness of ~0.5 nm (NiO) and ~2.6 nm (Ni0.5Mg0.50O). Four-point probe gives ρ ≈ 26 Ω·cm (NiO) and insulating behavior for Ni0.5Mg0.50O, consistent with bandgap widening and reduced hole concentration. These results establish RT epitaxial Mg-alloyed NiO with exceptional crystallinity, directly relevant to Ga2O3 heterojunctions for power electronics and solar-blind ultra violet C-band photodetectors, where tunable band alignment and sharp interfaces are critical. [reprint (PDF)]
29.	Electro-thermal breakdown in p-NiO/n-Ga2O3 heterojunction power diodes: evidence for the role of heat extraction via sapphire S. Kubsky, Z. Berger, M. Chevrot, D. J. Rogers, V. E. Sandana, F. Hosseini Teherani, N. De France, M. Lesecq, Z. Bougrioua, M. Razeghi Proc. of SPIE Vol. PC13897, PC138970X · 2026 ...[Visit Journal] Gallium oxide (Ga₂O₃) is attracting strong interest for next-generation power electronics due to its ultra-wide bandgap and large critical breakdown field; however, device performance is frequently constrained by self-heating arising from its relatively low and anisotropic thermal conductivity. In this work, the electrical and thermal behaviour of p-NiO/n-Ga₂O₃ heterojunction diodes grown by pulsed laser deposition on r-plane sapphire substrates is investigated under high-bias operation. Identical ring-mesa devices were mounted either on a thermally insulating support or on a metal heat sink, enabling a direct comparison of electro-thermal behaviour. While both configurations exhibit rectifying I–V characteristics, heat-sunk devices show reduced surface temperature rise, suppressed reverse leakage, and a significantly higher breakdown voltage (~ +2150 V) compared with devices measured without effective heat extraction (~ +1600 V). The results demonstrate that electro-thermal runaway, rather than intrinsic junction limitations, governs breakdown in these thin-film Ga₂O₃ heterojunctions, highlighting thermal management and thermal boundary conditions as key design parameters for high-voltage Ga₂O₃ power devices. [reprint (PDF)]
29.	Semiconductor ultraviolet detectors M. Razeghi and A. Rogalski SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685-- January 27, 1996 ...[Visit Journal] This paper presents an overview of semiconductor ultraviolet (UV) detectors that are currently available and associated technologies that are undergoing further development. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further consideration are restricted to modern semiconductor UV detectors, so the current state-of-the-art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main effort are currently directed to a new generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail. [reprint (PDF)]
28.	Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication M. Razeghi special issue of Microelectronics Journal 30 (10)-- October 1, 1999[reprint (PDF)]
28.	Splitting of the Landau Level Coincidence: A Novel Phase Transition in Tilted Magnetic Fields Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing Phys Rev B 47 (7), 4048 (1993)-- January 1, 1993 ...[Visit Journal] Magnetotransport studies of GaxIn1-xAs/InP heterostructures in strong parallel magnetic fields at mK temperatures reveal a suppression of the coincidence of two Landau levels with opposite spin at filling factor 2. This phenomenon is explained by the occurrence of a phase transition from a spin-unpolarized state (at small tilt angles) to a spin-polarized state (at large tilt angles). [reprint (PDF)]
28.	Tl incorporation in InSb and lattice contraction of In_1-xTl_xSb J.J. Lee and M. Razeghi Applied Physics Letters 76 (3)-- January 17, 2000 ...[Visit Journal] Ternary In_1−xTl_xSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In_1−xTl_xSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In_1−xTl_xSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In_1−xTl_xSb differs from that of other group III impurities in III antimonides. [reprint (PDF)]
28.	Pulse Autocorrelation Measurements Based on Two- and Three-Photon Conductivity in a GaN Photodiode A. Streltsov, K.D. Moll, A. Gaeta, P. Kung, D. Walker, and M. Razeghi Applied Physics Letters 75 (24)-- December 13, 1999 ...[Visit Journal] We characterize the performance of a GaN p-i-n photodiode as a nonlinear sensor for second- and third-order femtosecond pulse autocorrelation measurements in the visible and near-infrared regimes, respectively. The two- and three-photon absorption coefficients for GaN are also determined. [reprint (PDF)]
28.	Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors R. McClintock, A. Haddadi and M. Razeghi SPIE Proceedings, Vol. 8268, p. 826810-- January 22, 2012 ...[Visit Journal] Free-space optical communication is a promising solution to the “last mile” bottleneck of data networks. Conventional near infrared-based free-space optical communication systems suffer from atmospheric scattering losses and scintillation effects which limit the performance of the data links. Using mid-infrared, we reduce the scattering and thus can improve the quality of the data links and increase their range. Because of the low scattering, the data link cannot be intercepted without a complete or partial loss in power detected by the receiver. This type of communications provides ultra-high bandwidth and highly secure data transfer for both short and medium range data links. Quantum cascade lasers are one of the most promising sources for mid-wavelength infrared sources and Type-II superlattice photodetectors are strong candidates for detection in this regime. The same way that that low scattering makes mid-wavelength infrared ideal for secure free space communications,high scattering can be used for secure short-range free-space optical communications. In the solar-blind ultraviolet (< 280 nm) light is strongly scattered and absorbed. This scattering makes possible non-line-of-sight free-space optical communications. The scattering and absorption also prevent remote eavesdropping. III-Nitride based LEDs and photodetectors are ideal for non-line-of-sight free-space optical communication. [reprint (PDF)]
28.	-- November 30, 1999
27.	Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices Jiakai Li, Arash Dehzangi, Manijeh Razeghi Infrared Physics & Technology Volume 113, March 2021, 103641 ...[Visit Journal] In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs)based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K. [reprint (PDF)]
27.	Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer Steven Slivken and Manijeh Razeghi S. Slivken and M. Razeghi,, Journal of Quantum Electronics, Vol. 59, No. 4, doi: 10.1109/JQE.2023.3282710 ...[Visit Journal] We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35 μm. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of >0.7 W near room temperature. [reprint (PDF)]

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