291. | Cameras That Go Infrared in the Night New Scientist - February 17, 1996 Infrared detectors made from materials already used in lasers promise to provide the best infrared cameras and night-vision devices yet. These quantum well infrared photodetectors, or QWIPS are made from alternating layers of semiconductor materials, arranged atom by atom into layers just 10 molecules thick, says Manijeh Razeghi. ... [read more] |
292. | Growth of Ge-Dopes AlGaN Compound Semiconductor - January 31, 1996 Photoluminescence data for Al[x]Ga[1-x]N samples with x < 0.2 displayed sharp band edge emission and a bread deep-level emission near 2.4 eV. Ge doping eliminated the deep level emission features observed in un-dopes AlGaN samples suggesting that this deep level emission may be related to Ga vacancies that could be filled by Ge donor impurities ... [read more] |
293. | Razeghi, Faber Reconized for Achievement Observer - November 6, 1995 Two faculty members at the Robert R. McCormick School of Engineering and Applied Science -- Manijeh Razeghi and Katherine Faber -- have been cited by the Society of Women Engineers for outstanding achievements. ... [read more] |
294. | Aluminum-Free Diode Lasers Last Longer Laser Focus World - November 1, 1995 Ongoing test suggest both rugged operation and long life for InGaAsP based aluminum-free diode lasers fabricated by researchers at Northwestern University. Elimination of aluminum removes an easily oxidized specie that spreads performance-degrading defects through the structure by forming light-absorbing dark lines. ... [read more] |
295. | Engineering Center and Korea Collaborate Observer - October 2, 1995 The Center for Quantum Devices has been selected be the Korea Science and Engineering Foundation for a long-term collaboration to develop new lasers and semiconductor devices. The $1300,000 a year collaboration will enable research scientist and postdocs from the Joenbuk REsearch Center at Joenbuk National University to carry out joint research projects the Center for Quantum Devices of a five year period. ... [read more] |
296. | SWE Achievment Award Acceptance Adress: Dr. Razeghi Society of Women Engineers - October 1, 1995 Good evening, ladies and gentlemen. It is a great pleasure and honor for me to have been selected at the 44th recipient of the Society of Women Engineers Achievement Award. ... [read more] |
297. | For Leadership and COntributions to Optoelectronic Devices and Education Society of Women Engineers - October 1, 1995 The Achievement Award is the highest award given annually by the Society of Women Engineers. It's presented annually to a woman who has made an outstanding contribution in a field of engineering, has academic training in either science or engineering, and meets the requirements for Senor Member in the Society. ... [read more] |
298. | Korean Center Inauguration McCormick Dimension - September 1, 1995 In ceremonies held July 28, Northwestern and Korea announced a five-year collaboration between KOSEF and the Center for Quantum Devices to develop new semiconductors and lasers. ... [read more] |
299. | InGaAsP Laser Diodes Outperform AlGaAs Opto & Laser Europe - October 1, 1994 High-power semiconductor lasers based on InGaAsP alloys offer a superior alternative to conventional AlGaAs diodes. That's the view of Manijeh Razeghi at Northwestern Universtiy, who has fabricated devices with threshold current densities as low as 80 A/cm2, differential efficiencies as high as 1.2W/A, and projected lifetimes between 10^5 and 10^7 hours. ... [read more] |
300. | Aluminum-Free High-Power Diodes have Long Lifetimes Laser Focus World - August 1, 1994 Scientist at Northwestern University have fabricated high-power laser diodes based on InGaAsP lattice-matched to GaAs substrates. The devices have power outputs of 750 mW in quasi-continuous more, and 650 mW in continuous mode (per facet). Razehi says that these devices have suffered no observable degradation after more than 3000 house of operation in the quasi-continuous regime. ... [read more] |