271.
| Laser Startup Scores Al-feee Power Lasers
III-V's Review - December 1, 1996
Semiconductor Laser International Corp. Endicott, NY, USA has been granted an exclusive license from Northwestern University's Center for Quantum Devices, to develop, manufacture, market, and sell aluminum free high power semiconductor lasers. ... [read more]
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272.
| Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes
Photonics Spectra - December 1, 1996
Northwestern University has granted an exclusive license to Semiconductor Laser International Corp. (SLI) to develop, and sell aluminum-free high power laser worldwide for applications ranging from medicine to telecommunications to precision machining in the automotive industry. ... [read more]
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273.
| New Alloy Semiconductors Detect IR
Sensor Technology - December 1, 1996
A group at Northwestern University developed new thallium based semiconductor alloys with great promise in the long wavelength 1 to 12 μm regions of the spectrum. The goal: high-performance, room-temperature infrared sensing. ... [read more]
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274.
| Seeing a New Light; New Laser Boast Power, Reliability
Chicago Tribune - October 29, 1996
A high-power, low-energy miniature laser developed by Northwestern University researchers will be commercialized by Semiconductor Laser International Corp., the firm said Monday. ... [read more]
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275.
| GaN Film Nears Perfection
BMDO Update - September 1, 1996
Northwestern University's Center for Quantum Devices has grown some of the world's highest-quality III-Nitride films, with defect densities less than 10 million per centimeter squared. ... [read more]
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276.
| MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
Laser Focus World - July 1, 1996
At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more]
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277.
| Ultraviolet Detectors
Compound Semiconductor - May 1, 1996
Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more]
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278.
| Most Sensitive IR Detectors Developed by University Researchers
Notherwestern Observer - April 22, 1996
Northwestern University Researchers have developed a new kind of semiconductor material for IR detectors that is far mode sensitive than any made to date. The new detectors should be able to see and image of a human body in extreme detail as a distance of several miles. ... [read more]
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279.
| GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device
Physics Today - April 1, 1996
... [read more]
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280.
| Northwestern InSb Research Revisited
Electron Materials Technology News - April 1, 1996
Unfortunately the previous story about Northwestern university's QWIPs was incorrect. While the Center is working on QWIPs, the work discussed involved simple InSb p-n junction devices. ... [read more]
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu